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MBT6429DW1
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MBT6429DW1
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.15
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.2
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 500
Transistorgehäuse: SC-88-6_SC-70-6_SOT-363-6
Ersatz (vergleichstyp) für MBT6429DW1
MBT6429DW1
- PDF-Dokument zum Download bereitstellen...
3.1. mmbt6428_mmbt6429.pdf  Size:300K _motorola  |
 | it
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) MMBT6428 50 —
(IC = 1.0 mAdc, IB = 0) MMBT6429 45 —
Collector–Base Breakdown Voltage V(BR)CBO Vdc
(IC = 0.1 mAdc, IE = 0) MMBT6428 60 —
(IC = 0.1 mAdc, IE = 0) MMBT6429 55 —
Collector Cutoff Current ICES µAdc
(VCE = 30 Vdc) — 0.1
Collector Cutoff Current ICBO µAdc
(VCB = 30 Vdc, IE = 0) — 0.01
Emitter Cutoff Current IEBO µAdc
(VEB = 5.0 Vdc, IC = 0) — 0.01
1. FR–5 = 1.0 0.75 0.062 in.
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3.2. pmbt6428_pmbt6429_3.pdf Size:47K _philips2  |
 | 9 - 55 V
VCEO collector-emitter voltage open base
PMBT6428 - 50 V
PMBT6429 - 45 V
VEBO emitter-base voltage open collector - 6V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Phil |
3.3. pmbt6428_pmbt6429.pdf Size:109K _philips2  |
 | general purpose transistors PMBT6428; PMBT6429
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
PMBT6428 - 60 V
PMBT6429 - 55 V
VCEO collector-emitter voltage open base
PMBT6428 - 50 V
PMBT6429 - 45 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power |
3.4. mmbt6428lt1_mmbt6429lt1.pdf Size:194K _onsemi  |
 | Ambient
MMBT6428LT1 - 1KM
MMBT6429LT1 - M1L
Total Device Dissipation Alumina PD 300 mW
M = Date Code*
Substrate, (Note 2) TA = 25°C
G = Pb-Free Package
Derate above 25°C 2.4 mW/°C
(Note: Microdot may be in either location)
Thermal Resistance, RqJA 417 °C/W
*Date Code orientation and/or overbar may
Junction-to-Ambient
vary depending upon manufacturing location.
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
1. FR-5 = 1.0 0.75 0.062 in.
ORDERING INFORMATION
2. Alumina = 0 |
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