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MCH4014
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MCH4014
Werkstoff: Si
Polarity:
Gesamt-Verlustleistung (Pc): 0
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 0
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 0
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse:
Ersatz (vergleichstyp) für MCH4014
MCH4014
- PDF-Dokument zum Download bereitstellen...
1.1. mch4014.pdf  Size:369K _sanyo  |
 | Base
3
4 : Emitter
SANYO : MCPH4
4 3
2, 4
http://semicon.sanyo.com/en/network
No. A1921-1/10
20211AB TKIM TC-00002538
LOT No.
LOT No.
0.25
2.1
0.25
1.6
0.85
0.07
MCH4014
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=5V, IE=0A 1.0 ?A
Emitter Cutoff Current IEBO VEB=1V, IC=0A 1.0 ?A
DC Current Gain hFE VCE=5V, IC=5mA 60 150
Gain-Bandwidth Product fT VCE=5V, IC=10mA 8 10 GHz
Forward Transfer G |
4.1. mch4015.pdf Size:368K _sanyo  |
 | Base
3
4 : Emitter
SANYO : MCPH4
4 3
2, 4
http://semicon.sanyo.com/en/network
No. A1911-1/9
20911AB TKIM TC-00002539
0.25
2.1
LOT No.
LOT No.
0.25
1.6
0.85
0.07
MCH4015
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=5V, IE=0A 1.0 ?A
Emitter Cutoff Current IEBO VEB=1V, IC=0A 1.0 ?A
DC Current Gain hFE VCE=5V, IC=50mA 60 150
Gain-Bandwidth Product fT VCE=5V, IC=30mA 8 10 GHz
Forward Transfer |
4.2. mch4017.pdf Size:368K _sanyo  |
 | Emitter
4
4 : Base
SANYO : MCPH4
4 3
1, 3
http://semicon.sanyo.com/en/network
No. A1912-1/9
20911AB TKIM TC-00002541
0.25
2.1
LOT No.
LOT No.
0.25
1.6
0.85
0.07
MCH4017
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=5V, IE=0A 1.0 ?A
Emitter Cutoff Current IEBO VEB=1V, IC=0A 1.0 ?A
DC Current Gain hFE VCE=5V, IC=50mA 60 150
Gain-Bandwidth Product fT VCE=5V, IC=30mA 8 10 GHz
Forward Transfer |
4.3. mch4016.pdf Size:368K _sanyo  |
 | Emitter
4
4 : Base
SANYO : MCPH4
4 3
1, 3
http://semicon.sanyo.com/en/network
No. A1922-1/10
20211AB TKIM TC-00002540
LOT No.
LOT No.
0.25
2.1
0.25
1.6
0.85
0.07
MCH4016
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=5V, IE=0A 1.0 ?A
Emitter Cutoff Current IEBO VEB=1V, IC=0A 1.0 ?A
DC Current Gain hFE VCE=5V, IC=5mA 60 150
Gain-Bandwidth Product fT VCE=5V, IC=10mA 8 10 GHz
Forward Transfer G |
4.4. mch4013.pdf Size:40K _sanyo  |
 | pF
Forward Transfer Gain 12 16 dB
?S21e?2 VCE=3V, IC=10mA, f=2GHz
Noise Figure NF VCE=1V, IC=2mA, f=2GHz 1.5 2.0 dB
Marking : GH
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication devic |
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