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MMBT589L
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MMBT589L
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.31
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 30
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 100
Transistorgehäuse: SOT23-3
Ersatz (vergleichstyp) für MMBT589L
MMBT589L
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1.1. mmbt589lt1.pdf  Size:133K _onsemi  |
 | W
G3 = Device Code
(Note 2)
M = Date Code*
Total Device Dissipation (Ref. Figure 8) PDsingle
G = Pb-Free Package
(Single Pulse < 10 sec.) 575 mW
(Note: Microdot may be in either location)
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Cond |
3.1. mmbt589.pdf Size:283K _secos  |
 | oltage V(BR)CBO
Ic=-100µA,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO
Ic=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO
IE=-100µA,IC=0 -5 V
Collector cut-off current ICBO
VCB=-30V,IE=0 -0.1 µA
Collector-emitter cut-off current ICES
VCES=-30V -0.1 µA
Emitter cut-off current IEBO
VEB=-4V,IC=0 -0.1 µA
hFE1
VCE=-2V,IC=-1mA 100
hFE2
VCE=-2V,IC=-500mA 100 300
DC current gain
hFE3
VCE=-2V,IC=-1A 80
hFE4
VCE=-2V,IC=-2A 40
VCE(sat)1
IC= -500mA, IB |
3.2. mmbt589.pdf Size:875K _htsemi  |
 | nt ICES VCES=-30V -0.1 ?A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 ?A
hFE1 VCE=-2V,IC=-1mA 100
hFE2 VCE=-2V,IC=-500mA 100 300
DC current gain
hFE3 VCE=-2V,IC=-1A 80
hFE4 VCE=-2V,IC=-2A 40
VCE(sat)1 IC= -500mA, IB=-50mA -0.25 V
Collector-emitter saturation voltage VCE(sat)2 IC= -1A, IB=-100mA -0.3 V
VCE(sat)3 IC= -2A, IB=-200mA -0.65 V
Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100mA -1.2 V
Base-emitter Turn-on voltage VBE(on) VCE=-2V, IC=-1A -1.1 V
VCE=-5V, IC=-10 |
3.3. mmbt589_sot-23.pdf Size:228K _lge  |
 | IE=0 -0.1 ?A
Collector-emitter cut-off current ICES VCES=-30V -0.1 ?A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 ?A
hFE1 VCE=-2V,IC=-1mA 100
hFE2 VCE=-2V,IC=-500mA 100 300
DC current gain
hFE3 VCE=-2V,IC=-1A 80
hFE4 VCE=-2V,IC=-2A 40
VCE(sat)1 IC= -500mA, IB=-50mA -0.25 V
Collector-emitter saturation voltage VCE(sat)2 IC= -1A, IB=-100mA -0.3 V
VCE(sat)3 IC= -2A, IB=-200mA -0.65 V
Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100mA -1.2 V
Base-emitter Turn-on voltage V |
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