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NSS12200L
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: NSS12200L
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.71
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 12
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 4
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 250
Transistorgehäuse: SOT23-3
Ersatz (vergleichstyp) für NSS12200L
NSS12200L
- PDF-Dokument zum Download bereitstellen...
1.1. nss12200l.pdf Size:126K _onsemi |
| tputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
1
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
BASE
Compliant
MAXIMUM RATINGS (TA = 25°C) 2
EMITTER
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO -12 Vdc
3
Collector-Base Voltage VCBO -12 Vdc
1
Emitter-Base Voltage VEBO -7.0 Vdc
2
Collector Current - Continuous IC -2.0 A
SOT-23 (TO-236)
Collector Current - Peak ICM -4.0 A
CASE 318
STYLE 6
Electrostatic Discharge ESD |
3.1. nss12201l.pdf Size:126K _onsemi |
| uts, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers. 1
BASE
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
2
MAXIMUM RATINGS (TA = 25°C)
EMITTER
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 12 Vdc
3
Collector-Base Voltage VCBO 12 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
1
Collector Current - Continuous IC 2.0 A
2
SOT-23 (TO-236)
Collector Current - Peak ICM 4.0 A
CASE 318
Electrostatic Discharge ESD HBM Class 3B
ST |
5.1. nss12100uw3tcg.pdf Size:80K _onsemi |
| puts, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
1
BASE
Features
• High Current Capability (1 A)
2
EMITTER
• High Power Handling (Up to 740 mW)
• Low VCE(s) (200 mV Typical @ 500 mA)
• Small Size
3
• Low Noise
WDFN3
2
• This is a Pb-Free Device
CASE 506AU
1
Benefits
• High Specific Current and Power Capability Reduces Required PCB Area
MARKING DIAGRAM
• Reduced Parasitic Losses Increases Battery Life
VG M
G
MAXIMUM RATINGS (TA = 25°C)
1
|
5.2. nss12100m3.pdf Size:82K _onsemi |
| uts, and the Linear Gain
1
(Beta) makes them ideal components in analog amplifiers.
BASE
2
Features
EMITTER
• High Continuous Current Capability (1 A)
• Low VCE(sat) (150 mV Typical @ 500 mA) MARKING
DIAGRAM
• Small Size 1.2 mm x 1.2 mm
3
• This is a Pb-Free Device
SOT-723
VE M
CASE 631AA
Benefits
2
STYLE 1
1
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
VE = Specific Device Code
M = Date Code
MAXI |
5.3. nss12501uw3-d.pdf Size:82K _onsemi |
| e Linear Gain
COLLECTOR
(Beta) makes them ideal components in analog amplifiers. 3
Features
1
• This is a Pb-Free Device BASE
MAXIMUM RATINGS (TA = 25°C)
2
Rating Symbol Max Unit
EMITTER
Collector?Emitter Voltage VCEO 12 Vdc
3
Collector?Base Voltage VCBO 12 Vdc
WDFN3
Emitter?Base Voltage VEBO 6.0 Vdc
2
CASE 506AU
1
Collector Current - Continuous IC 5.0 Adc
Collector Current - Peak ICM 7.0 A
MARKING DIAGRAM
Electrostatic Discharge ESD HBM Class 3B
MM Class C
VF MG
THERMAL |
5.4. nss12600cf8.pdf Size:106K _onsemi |
| puts, and the Linear Gain
1, 2, 3, 6, 7, 8
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb-Free Device
4
MAXIMUM RATINGS (TA = 25°C)
BASE
Rating Symbol Max Unit
5
Collector-Emitter Voltage VCEO -12 Vdc
EMITTER
Collector-Base Voltage VCBO -12 Vdc
Emitter-Base Voltage VEBO -7.0 Vdc
ChipFET]
CASE 1206A
Collector Current - Continuous IC -5.0 Adc
STYLE 4
Collector Current - Peak ICM -6.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
MARKING DIAGRAM
|
5.5. nss12601cf8-d.pdf Size:83K _onsemi |
| U's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
4
• This is a Pb-Free Device
BASE
MAXIMUM RATINGS (TA = 25°C)
5
Rating Symbol Max Unit
EMITTER
Collector?Emitter Voltage VCEO 12 Vdc
Collector?Base Voltage VCBO 12 Vdc
ChipFET]
8
CASE 1206A
Emitter?Base Voltage VEBO 6.0 Vdc
STYLE 4
Collector Current - Continuous IC 6.0 Adc 1
Collector Current - Peak ICM 8.0 A
MARKING DIAGRAM
Electrostatic Discharge ESD HBM Class 3B
MM Class C
VF |
5.6. nss12500uw3.pdf Size:108K _onsemi |
| tputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
1
• This is a Pb-Free Device
BASE
2
MAXIMUM RATINGS (TA = 25°C)
EMITTER
Rating Symbol Max Unit
3
Collector-Emitter Voltage VCEO -12 Vdc
WDFN3
2
Collector-Base Voltage VCBO -12 Vdc CASE 506AU
1
Emitter-Base Voltage VEBO -7.0 Vdc
MARKING DIAGRAM
Collector Current - Continuous IC -5.0 Adc
Collector Current - Peak ICM -8.0 A
VE M
G
Electrostatic Discharge ESD HBM Class 3B
MM Class C
1
VE = Spe |
5.7. nss12100xv6.pdf Size:99K _onsemi |
| ntrol outputs, and the Linear Gain
3
(Beta) makes them ideal components in analog amplifiers.
BASE
Features
4
• High Current Capability (1 A)
EMITTER
• High Power Handling (Up to 650 mW)
• Low VCE(s) (150 mV Typical @ 500 mA)
• Small Size
• This is a Pb-Free Device
1
SOT-563
Benefits
CASE 463A
• High Specific Current and Power Capability Reduces Required PCB Area
STYLE 4
• Reduced Parasitic Losses Increases Battery Life
DEVICE MARKING
MAXIMUM RATINGS (TA = 25°C)
Rating Symbo |
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