PDTA123JM
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: PDTA123JM
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.25
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT883
Ersatz (vergleichstyp) für PDTA123JM
PDTA123JM
- PDF-Dokument zum Download bereitstellen...
2.1. pdta123jef_1.pdf  Size:54K _motorola  |
 | Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 5V
negative --12 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient |
2.2. pdta123je_2.pdf Size:57K _motorola  |
 | ICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = -10 mA; VCE = -5 V 100 - -
R1 input resistor 1.54 2.2 2.86 k?
R2
------- resistor ratio 17 21 26
-
R1
1998 Nov 25 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA123JE
LIMITING V |
2.3. pdta123jt_1.pdf Size:56K _motorola  |
 | l.
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - +5 V
negative --12 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage tempera |
2.4. pdta123jef_1.pdf Size:54K _philips  |
 | Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 5V
negative --12 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient |
2.5. pdta123je_2.pdf Size:57K _philips  |
 | ICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = -10 mA; VCE = -5 V 100 - -
R1 input resistor 1.54 2.2 2.86 k?
R2
------- resistor ratio 17 21 26
-
R1
1998 Nov 25 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA123JE
LIMITING V |
2.6. pdta123jt_1.pdf Size:56K _philips  |
 | l.
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - +5 V
negative --12 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage tempera |
2.7. pdta123j_series.pdf Size:175K _philips  |
 | F
PDTA123JK SOT346 SC-59 43 PDTC123JK
PDTA123JM SOT883 SC-101 DG PDTC123JM
PDTA123JS SOT54 (TO-92) SC-43 TA123J PDTC123JS
PDTA123JT SOT23 - *23(1) PDTC123JT
PDTA123JU SOT323 SC-70 *43(1) PDTC123JU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 02 2
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA123J series
R1 = 2.2 k?, R2 = 47 k?
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUT |
Anderen transistoren... PDTA115TM
, PDTA115TT
, PDTA115TU
, PDTA123EE
, PDTA123EM
, PDTA123ET
, PDTA123EU
, PDTA123JE
, TIP31
, PDTA123JT
, PDTA123JU
, PDTA123TE
, PDTA123TM
, PDTA123TT
, PDTA123TU
, PDTA123YE
, PDTA123YM
.
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