PDTA143TT
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: PDTA143TT
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.25
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für PDTA143TT
PDTA143TT
- PDF-Dokument zum Download bereitstellen...
2.1. pdta143t_series.pdf  Size:166K _philips  |
 | SOT346 SC-59 45 PDTC143TK
PDTA143TM SOT883 SC-101 E6 PDTC143TM
PDTA143TS SOT54 (TO-92) SC-43 TA143T PDTC143TS
PDTA143TT SOT23 - *42(1) PDTC143TT
PDTA143TU SOT323 SC-70 *45(1) PDTC143TU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 04 2
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA143T series
R1 = 4.7 k?, R2 = open
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBO |
3.1. pdta143es_2.pdf Size:58K _motorola  |
 | BOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 500 mW
hFE DC current gain VCE = -5 V; IC = -10 mA 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 18 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor
PDTA143ES
LIMITING VALUES
In accordance wit |
3.2. pdta143ee_2.pdf Size:57K _motorola  |
 | put
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = -10 mA; VCE = -5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 Jul 23 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143EE
LIMITING |
3.3. pdta143zk_3.pdf Size:55K _motorola  |
 | 5 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ZK
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - +5 V
negative --30 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot tot |
3.4. pdta143eu_4.pdf Size:58K _motorola  |
 |
2 emitter/ground (+)
symbol.
3 collector/output
1999 Apr 13 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 10 V
negative --30 V
IO output curren |
3.5. pdta143xt_1.pdf Size:56K _motorola  |
 |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 7V
negative --20 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj jun |
3.6. pdta143zt_3.pdf Size:56K _motorola  |
 | in Malaysia.
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 25 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ZT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - +5 V
negative --30 V
IO outp |
3.7. pdta143xe_1.pdf Size:55K _motorola  |
 | ing System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 7V
negative --20 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature |
3.8. pdta143ek_2.pdf Size:57K _motorola  |
 | t
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = -10 mA; VCE = -5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 18 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143EK
LIMITING |
3.9. pdta143zt_1.pdf Size:49K _motorola  |
 | or/output
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = -10 mA; VCE = -5V 80 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 8 10 12
-
R1
1997 Dec 12 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ZT
LI |
3.10. pdta143et_4.pdf Size:56K _motorola  |
 | 2 emitter/ground (+)
symbol.
3 collector/output
1999 Apr 13 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 10 V
negative --30 V
IO output current |
3.11. pdta143es_2.pdf Size:58K _philips  |
 | BOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 500 mW
hFE DC current gain VCE = -5 V; IC = -10 mA 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 18 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor
PDTA143ES
LIMITING VALUES
In accordance wit |
3.12. pdta143ee_2.pdf Size:57K _philips  |
 | put
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = -10 mA; VCE = -5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 Jul 23 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143EE
LIMITING |
3.13. pdta143zk_3.pdf Size:55K _philips  |
 | 5 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ZK
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - +5 V
negative --30 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot tot |
3.14. pdta143eu_4.pdf Size:58K _philips  |
 |
2 emitter/ground (+)
symbol.
3 collector/output
1999 Apr 13 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 10 V
negative --30 V
IO output curren |
3.15. pdta143e_series.pdf Size:174K _philips  |
 | 3EEF
PDTA143EK SOT346 SC-59 01 PDTC143EK
PDTA143EM SOT883 SC-101 DL PDTC143EM
PDTA143ES SOT54 (TO-92) SC-43 TA143E PDTC143ES
PDTA143ET SOT23 - *01(1) PDTC143ET
PDTA143EU SOT323 SC-70 *01(1) PDTC143EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 04 2
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA143E series
R1 = 4.7 k?, R2 = 4.7 k?
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED |
3.16. pdta143z_series.pdf Size:174K _philips  |
 | F
PDTA143ZK SOT346 SC-59 19 PDTC143ZK
PDTA143ZM SOT883 SC-101 DP PDTC143ZM
PDTA143ZS SOT54 (TO-92) SC-43 TA143Z PDTC143ZS
PDTA143ZT SOT23 - *19(1) PDTC143ZT
PDTA143ZU SOT323 SC-70 *47(1) PDTC143ZU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 05 2
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA143Z series
R1 = 4.7 k?, R2 = 47 k?
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUT |
3.17. pdta143xt_1.pdf Size:56K _philips  |
 |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 7V
negative --20 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj jun |
3.18. pdta143zt_3.pdf Size:56K _philips  |
 | in Malaysia.
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 25 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ZT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - +5 V
negative --30 V
IO outp |
3.19. pdta143xe_1.pdf Size:55K _philips  |
 | ing System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 7V
negative --20 V
IO output current (DC) --100 mA
ICM peak collector current --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature |
3.20. pdta143ek_2.pdf Size:57K _philips  |
 | t
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = -10 mA; VCE = -5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 18 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143EK
LIMITING |
3.21. pdta143zt_1.pdf Size:49K _philips  |
 | or/output
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - -50 V
IO output current (DC) - - -100 mA
ICM peak collector current - - -100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = -10 mA; VCE = -5V 80 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 8 10 12
-
R1
1997 Dec 12 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ZT
LI |
3.22. pdta143et_4.pdf Size:56K _philips  |
 | 2 emitter/ground (+)
symbol.
3 collector/output
1999 Apr 13 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --50 V
VEBO emitter-base voltage open collector --10 V
VI input voltage
positive - 10 V
negative --30 V
IO output current |
Anderen transistoren... PDTA124XT
, PDTA124XU
, PDTA143EE
, PDTA143EM
, PDTA143ET
, PDTA143EU
, PDTA143TE
, PDTA143TM
, TIP122
, PDTA143TU
, PDTA143XE
, PDTA143XM
, PDTA143XT
, PDTA143XU
, PDTA143ZE
, PDTA143ZM
, PDTA143ZT
.
|
