PDTC114YT
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: PDTC114YT
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.25
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für PDTC114YT
PDTC114YT
- PDF-Dokument zum Download bereitstellen...
1.1. pdtc114yt_3.pdf  Size:56K _motorola  |
 | ade in Malaysia.
1999 May 21 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector |
1.2. pdtc114yt_3.pdf Size:56K _philips  |
 | ade in Malaysia.
1999 May 21 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector |
2.1. pdtc114yu_1.pdf Size:59K _motorola  |
 | collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - 40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 200 mW
Tstg storage temperature -65 |
2.2. pdtc114ye_3.pdf Size:56K _motorola  |
 | e Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operat |
2.3. pdtc114yu_1.pdf Size:59K _philips  |
 | collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - 40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 200 mW
Tstg storage temperature -65 |
2.4. pdtc114y_series.pdf Size:174K _philips  |
 | TC114YK SOT346 SC-59 47 PDTA114YK
PDTC114YM SOT883 SC-101 DU PDTA114YM
PDTC114YS SOT54 (TO-92) SC-43 TC114Y PDTA114YS
PDTC114YT SOT23 - *27(1) PDTA114YT
PDTC114YU SOT323 SC-70 *30(1) PDTA114YU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 17 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC114Y series
R1 = 10 k?, R2 = 47 k?
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE A |
2.5. pdtc114ye_3.pdf Size:56K _philips  |
 | e Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operat |
Anderen transistoren... PDTC114ET
, PDTC114EU
, PDTC114TE
, PDTC114TM
, PDTC114TT
, PDTC114TU
, PDTC114YE
, PDTC114YM
, 2N3055
, PDTC114YU
, PDTC115EE
, PDTC115EM
, PDTC115ET
, PDTC115EU
, PDTC115TE
, PDTC115TM
, PDTC115TT
.
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