PDTC124TM
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: PDTC124TM
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.25
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT883
Ersatz (vergleichstyp) für PDTC124TM
PDTC124TM
- PDF-Dokument zum Download bereitstellen...
2.1. pdtc124t_series.pdf  Size:174K _philips  |
 | 6 SC-59 50 PDTA124TK
PDTC124TM SOT883 SC-101 DY PDTA124TM
PDTC124TS SOT54 (TO-92) SC-43 TC124T PDTA124TS
PDTC124TT SOT23 - *45(1) PDTA124TT
PDTC124TU SOT323 SC-70 *50(1) PDTA124TU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 13 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC124T series
R1 = 22 k?, R2 = open
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN |
3.1. pdtc124ek_3.pdf Size:57K _motorola  |
 | ICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = 5 mA; VCE =5V 60 - -
R1 input resistor 15.4 22 28.6 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 08 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124EK
LIMITING VALUES
In |
3.2. pdtc124xef_2.pdf Size:54K _motorola  |
 | 2 emitter/ground
Fig.2 Equivalent inverter symbol.
3 collector/output
1999 May 18 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC124XEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negati |
3.3. pdtc124ee_2.pdf Size:57K _motorola  |
 | collector/output
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = 5 mA; VCE =5V 60 - -
R1 input resistor 15.4 22 28.6 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 Jul 31 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124EE
LI |
3.4. pdtc124et_5.pdf Size:56K _motorola  |
 | itter/ground
symbol.
3 collector/output
1999 Apr 16 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current (DC) - |
3.5. pdtc124eu_3.pdf Size:58K _motorola  |
 |
2 emitter/ground
symbol.
3 collector/output
1999 Apr 16 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current ( |
3.6. pdtc124xe_3.pdf Size:55K _motorola  |
 | 8 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124XE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot to |
3.7. pdtc124es_2.pdf Size:58K _motorola  |
 | RAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 500 mW
hFE DC current gain IC = 5 mA; VCE =5V 60 - -
R1 input resistor 15.4 22 28.6 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 May 08 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124ES
LIMITING VALUES
In accordance with the Absolute Ma |
3.8. pdtc124ek_3.pdf Size:57K _philips  |
 | ICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = 5 mA; VCE =5V 60 - -
R1 input resistor 15.4 22 28.6 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 08 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124EK
LIMITING VALUES
In |
3.9. pdtc124xef_2.pdf Size:54K _philips  |
 | 2 emitter/ground
Fig.2 Equivalent inverter symbol.
3 collector/output
1999 May 18 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC124XEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negati |
3.10. pdtc124ee_2.pdf Size:57K _philips  |
 | collector/output
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = 5 mA; VCE =5V 60 - -
R1 input resistor 15.4 22 28.6 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 Jul 31 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124EE
LI |
3.11. pdtc124et_5.pdf Size:56K _philips  |
 | itter/ground
symbol.
3 collector/output
1999 Apr 16 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current (DC) - |
3.12. pdtc124eu_3.pdf Size:58K _philips  |
 |
2 emitter/ground
symbol.
3 collector/output
1999 Apr 16 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current ( |
3.13. pdtc124e_series.pdf Size:174K _philips  |
 | TC124EK SOT346 SC-59 06 PDTA124EK
PDTC124EM SOT883 SC-101 DX PDTA124EM
PDTC124ES SOT54 (TO-92) SC-43 TC124E PDTA124ES
PDTC124ET SOT23 - *17(1) PDTA124ET
PDTC124EU SOT323 SC-70 *06(1) PDTA124EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 17 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC124E series
R1 = 22 k?, R2 = 22 k?
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE A |
3.14. pdtc124xe_3.pdf Size:55K _philips  |
 | 8 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124XE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot to |
3.15. pdtc124es_2.pdf Size:58K _philips  |
 | RAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 500 mW
hFE DC current gain IC = 5 mA; VCE =5V 60 - -
R1 input resistor 15.4 22 28.6 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 May 08 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124ES
LIMITING VALUES
In accordance with the Absolute Ma |
Anderen transistoren... PDTC123YM
, PDTC123YT
, PDTC123YU
, PDTC124EE
, PDTC124EM
, PDTC124ET
, PDTC124EU
, PDTC124TE
, BD140
, PDTC124TT
, PDTC124TU
, PDTC124XE
, PDTC124XM
, PDTC124XT
, PDTC124XU
, PDTC143EE
, PDTC143EM
.
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