RN1103ACT >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

RN1101MFV?RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.2 � 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, 0.80 � 0.05 so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. 1 1 Complementary to the RN2101MFV to RN2106MFV 3 Equivalent Circuit and Bias Resistor Values 2 Type No. R1 (k?) R2 (k?) RN1101MFV 4.7 4.7 RN1102MFV 10 10 RN1103MFV 22 22 RN1104MFV 47 47 1. BASE RN1105MFV 2.2 47 2. EMITTER VESM 3. COLLECTOR RN1106MFV 4.7 47 JEDEC ? JEITA ? 2-1L1A TOSHIBA Absolute Maximum Ratings (Ta = 25�C) Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit

4.2. rn1101fs_rn1102fs_rn1103fs_rn1104fs_rn1105fs_rn1106fs.pdf Size:126K _toshiba

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications � Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more 1 compact equipment and save assembly cost. 3 � Complementary to RN2101FS~RN2106FS 2 0.8�0.05 0.1�0.05 1.0�0.05 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) 0.1�0.05 RN1101FS 4.7 4.7 R1 B RN1102FS 10 10 1.BASE RN1103FS 22 22 2.EMITTER fSM 3.COLLECOTR RN1104FS 47 47 E RN1105FS 2.2 47 JEDEC ? RN1106FS 4.7 47 JEITA ? TOSHIBA 2-1E1A Weight: 0.0006g (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V RN1101FS~1106FS Collector-emitter voltage VCEO 20 V RN1101

5.1. rn1107fs_rn1108fs_rn1109fs.pdf Size:129K _toshiba

RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications � Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. � Complementary to RN2107FS~RN2109FS 1 3 2 0.8�0.05 Equivalent Circuit and Bias Resistor Values 0.1�0.05 1.0�0.05 C Type No. R1 (k?) R2 (k?) RN1107FS 10 47 R1 0.1�0.05 B RN1108FS 22 47 RN1109FS 47 22 1.BASE 2.EMITTER E fSM 3.COLLECOTR JEDEC ? JEITA ? TOSHIBA 2-1E1A Absolute Maximum Ratings (Ta = 25�C) (Q1, Q2 Weight: 0.0006 g (typ.) common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V RN1107FS~ RN1109FS Collector-emitter voltage VCEO 20 V RN1107FS 6 Emitter-base voltage RN1108FS VEBO 7 V RN1109FS 15

5.2. rn1107mfv_rn1108mfv_rn1109mfv.pdf Size:361K _toshiba

RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit: mm 1.2 � 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 � 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. 3 A wide range of resistor values is available for use in various circuits. 2 Complementary to the RN2107MFV to RN2109MFV Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) 1. BASE RN1107MFV 10 47 2. EMITTER VESM 3. COLLECTOR RN1108MFV 22 47 RN1109MFV 47 22 JEDEC ? JEITA ? TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1107MFV to RN1109

5.3. rn1101ct_rn1106ct_090413.pdf Size:167K _toshiba

RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Unit: mm Inverter Circuit Applications 0.6�0.05 0.5�0.03 Interface Circuit Applications Driver Circuit Applications 3 � Incorporating a bias resistor into a transistor reduces parts count. 1 2 Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. � Complementary to RN2101CT to RN2106CT 0.35�0.02 0.05�0.03 0.15�0.03 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) 1.BASE RN1101CT 4.7 4.7 2. EMITTER R1 CST3 B RN1102CT 10 10 3, COLLECTOR RN1103CT 22 22 JEDEC ? RN1104CT 47 47 E JEITA ? RN1105CT 2.2 47 TOSHIBA 2-1J1A RN1106CT 4.7 47 Weight: 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V RN1101

5.4. rn1107-1108-1109_ xh_xi_xj_sot416.pdf Size:138K _toshiba

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2107~2109 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1107 10 47 RN1108 22 47 RN1109 47 22 JEDEC ? EIAJ ? TOSHIBA 2-2H1A Weight: 2.4mg Maximum Ratings (Ta = 25� �C) � � Characteristic Symbol Rating Unit Collector-base voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO 50 V RN1107 6 Emitter-base voltage RN1108 VEBO 7 V RN1109 15 Collector current RN1107~1109 Ic 100 mA Collector power dissipation RN1107~1109 Pc 100 mW Junction temperature RN1107~1109 Tj 150 C Storage temperature range RN1107~1109 Tstg -55~150 C RN1107~1109 Electrical Characteristics (Ta = 25� �C) � �

5.5. rn1101f-1106f_ xa-b-c-d-e-f_sot490.pdf Size:147K _toshiba

RN1101F?RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent Circuit And Bias Resister Values Type No. R1 (k?) R2 (k?) RN1101F 4.7 4.7 RN1102F 10 10 RN1103F 22 22 RN1104F 47 47 RN1105F 2.2 47 RN1106F 4.7 47 JEDEC ? EIAJ ? 2-2H1A TOSHIBA Maximum Ratings (Ta = 25�C) Weight: 2.3 mg Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1101F~1106F Collector-emitter voltage VCEO 50 V RN1101F~1104F 10 Emitter-base voltage VEBO V RN1105F, 1106F 5 Collector current IC 100 mA Collector power dissipation PC 100 mW RN1101F~1106F Junction temperature Tj 150 �C Storage temperature range Tstg -55~150 �C 000707EAA2 RN110

5.6. rn1107ct_rn1109ct_090413.pdf Size:151K _toshiba

RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Unit: mm Inverter Circuit Applications 0.6�0.05 Interface Circuit Applications 0.5�0.03 Driver Circuit Applications 3 � Incorporating a bias resistor into a transistor reduces the number of parts, which enable the manufacture of ever more compact 1 2 equipment and saves assembly cost. � Complementary to RN2107CT to RN2109CT 0.35�0.02 0.05�0.03 0.15�0.03 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) 1.BASE RN1107CT 10 47 R1 2.EMITTER B RN1108CT 22 47 CST3 3.COLLECTOR RN1109CT 47 22 JEDEC ? E JEITA ? TOSHIBA 2-1J1A Weight: 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V RN1107CT to RN1109CT Collector-emitter voltage VCEO 20 V RN1107CT 6 Emitter-base voltage RN1108C

5.7. rn1101ft-1106ft_ xa-b-c-d-e-f_ sot623.pdf Size:211K _toshiba

RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications � High-density mount is possible because of devices housed in very thin TESM packages. � Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. � Wide range of resistor values are available to use in various circuit designs. � Complementary to RN2101FT~RN2106FT Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN1101FT 4.7 4.7 R1 B RN1102FT 10 10 JEDEC ? RN1103FT 22 22 JEITA ? RN1104FT 47 47 E TOSHIBA 2-1B1A RN1105FT 2.2 47 Weight:0.0022 g (typ.) RN1106FT 4.7 47 Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base

5.8. rn1107act_rn1109act_090413.pdf Size:164K _toshiba

RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications TOP View 0.6�0.05 � Extra small package(CST3) is applicable for extra high density 0.5�0.03 fabrication. � Incorporating a bias resistor into a transistor reduces the number of parts, 3 which enables the manufacture of ever more compact equipment and saves assembly cost. � Complementary to RN2107ACT to RN2109ACT 1 2 0.35�0.02 0.05�0.03 Equivalent Circuit and Bias Resistor Values 0.15�0.03 C Type No. R1 (k?) R2 (k?) 1.BASE RN1107ACT 10 47 R1 2.EMITTER B RN1108ACT 22 47 CST3 3.COLLECTOR RN1109ACT 47 22 JEDEC ? E JEITA ? TOSHIBA 2-1J1A Weight: 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V RN1107ACT to RN1109ACT Colle

5.9. rn1101fs-1106fs_ l0-1-2-3-4-5_sot823.pdf Size:98K _toshiba

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications � Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. 1 � Complementary to RN2101FS~RN2106FS 3 2 0.8�0.05 Equivalent Circuit and Bias Resistor Values 0.1�0.05 1.0�0.05 C Type No. R1 (k?) R2 (k?) RN1101FS 4.7 4.7 0.1�0.05 R1 B RN1102FS 10 10 1.BASE fSM 2.EMITTER RN1103FS 22 22 3.COLLECOTR RN1104FS 47 47 E RN1105FS 2.2 47 JEDEC ? RN1106FS 4.7 47 JEITA ? TOSHIBA 2-1E1A Weight: 0.0006g (typ.) Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V RN1101FS~1106FS Collector-emitter voltage VCEO 20 V RN1101FS~1104FS 10

5.10. rn1101act_rn1106act_100311.pdf Size:168K _toshiba

RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit: mm Inverter Circuit Applications 0.6�0.05 0.5�0.03 Interface Circuit Applications Driver Circuit Applications 3 � Incorporating a bias resistor into a transistor reduces the number of parts, 1 2 which enables the manufacture of ever more compact equipment and saves assembly cost. � Complementary to RN2101ACT to RN2106ACT 0.35�0.02 0.05�0.03 0.15�0.03 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) 1.BASE 2. EMITTER RN1101ACT 4.7 4.7 R1 CST3 3.COLLECTOR B RN1102ACT 10 10 RN1103ACT 22 22 JEDEC ? RN1104ACT 47 47 JEITA ? E RN1105ACT 2.2 47 TOSHIBA 2-1J1A RN1106ACT 4.7 47 Weight: 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V RN

5.11. rn1101-1106_ xa-b-c-d-e-f sot416.pdf Size:134K _toshiba

RN1101?RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101~RN2106 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1101 4.7 4.7 RN1102 10 10 RN1103 22 22 RN1104 47 47 RN1105 2.2 47 RN1106 4.7 47 JEDEC ? EIAJ ? TOSHIBA 2-2H1A Weight: 2.4mg Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1101~1106 Collector-emitter voltage VCEO 50 V RN1101~1104 10 Emitter-base voltage VEBO V RN1105, 1106 5 Collector current IC 100 mA Collector power dissipation PC 100 mW RN1101~1106 Junction temperature Tj 150 �C Storage temperature range Tstg -55~150 �C RN1101?RN1106 Electrical Characteristics (Ta

5.12. rn1101_rn1106_071101.pdf Size:566K _toshiba

RN1101?RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2101~ RN2106 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1101 4.7 4.7 RN1102 10 10 RN1103 22 22 RN1104 47 47 RN1105 2.2 47 RN1106 4.7 47 JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ). Absolute Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1101~1106 Collector-emitter voltage VCEO 50 V RN1101~1104 10 Emitter-base voltage VEBO V RN1105, 1106 5 Collector current IC 100 mA Collector power dissipation PC 100 mW RN1101~1106 Junction temperature Tj 150 �C Storage temperature range Tstg -55~150 �C Note: Using c

5.13. rn1107_rn1109_100406.pdf Size:339K _toshiba

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107 to 2109 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1107 10 47 RN1108 22 47 RN1109 47 22 JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4mg (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit Collector-base voltage RN1107 to 1109 VCBO 50 V Collector-emitter voltage RN1107 to 1109 VCEO 50 V RN1107 6 Emitter-base voltage RN1108 VEBO 7 V RN1109 15 Collector current RN1107 to 1109 IC 100 mA Collector power dissipation RN1107 to 1109 PC 100 mW Junction temperature RN1107 to 1109 Tj 150 �C Storage temperature range RN1107 to 1109 Tstg -55 to 150 �C Note: Using continuo

Anderen transistoren... RN1101FS , RN1101MFV , RN1101 , RN1102ACT , RN1102CT , RN1102FS , RN1102MFV , RN1102 , 2N3715 , RN1103CT , RN1103FS , RN1103MFV , RN1103 , RN1104ACT , RN1104CT , RN1104FS , RN1104MFV .


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