RN1105ACT . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN1105ACT

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0

Kollektor-Basis-Sperrspannung (Ucb): 0

Kollektor-Emitter-Sperrspannung (Uce): 50

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C:

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 0

Transistorgehäuse: SOT-883_CST3

Ersatz (vergleichstyp) für RN1105ACT

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4.1. rn1101mfv_rn1102mfv_rn1103mfv_rn1104mfv_rn1105mfv_rn1106mfv.pdf Size:1016K _toshiba

Collector-base voltage VCBO 50 V RN1101MFV to 1106MFV Collector-emitter voltage VCEO 50 V RN1101MFV to 1104MFV 10 Emitter-base voltage VEBO V RN1105MFV, 1106MFV 5 Collector current IC 100 mA Collector power dissipation PC(Note 1) 150 mW RN1101MFV to 1106MFV Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.

4.2. rn1101fs_rn1102fs_rn1103fs_rn1104fs_rn1105fs_rn1106fs.pdf Size:126K _toshiba

FS~1104FS 10 Emitter-base voltage VEBO V RN1105FS, 1106FS 5 Collector current IC 50 mA Collector power dissipation PC 50 mW RN1101FS~RN1106FS Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem

5.1. rn1107fs_rn1108fs_rn1109fs.pdf Size:129K _toshiba

Collector current IC 50 mA Collector power dissipation PC 50 mW RN1107FS~ RN1109FS Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute m

5.2. rn1107mfv_rn1108mfv_rn1109mfv.pdf Size:361K _toshiba

MFV Collector-emitter voltage VCEO 50 V RN1107MFV 6 Emitter-base voltage RN1108MFV VEBO 7 V RN1109MFV 15 Collector current IC 100 mA Collector power dissipation PC (Note 1) 150 mW RN1107MFV to RN1109MFV Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabilit

5.3. rn1101ct_rn1106ct_090413.pdf Size:167K _toshiba

CT to 1106CT Collector-emitter voltage VCEO 20 V RN1101CT to 1104CT 10 Emitter-base voltage VEBO V RN1105CT, 1106CT 5 Collector current IC 50 mA Collector power dissipation PC 50 mW RN1101CT ro 1106CT Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability sig

5.4. rn1107-1108-1109_ xh_xi_xj_sot416.pdf Size:138K _toshiba

Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit ICBO VCB = 50V, IE = 0 100 nA ? ? ? Collector cut-off current RN1107~1109 ICEO VCE = 50V, IB = 0 500 nA ? ? ? RN1107 VEB = 6V, IC = 0 0.081 0.15 ? ? Emitter cut-off current RN1108 IEBO VEB = 7V, IC = 0 0.078 0.145 mA ? ? RN1109 VEB = 15V, IC = 0 0.167 0.311 ? ? RN1107 80 ? ? ? DC current gain RN1108 hFE VCE = 5V, IC = 10mA 80 ? ? ? ? RN1109 70 ? ? ? Collector-emitter RN1107~1109 VCE (sat) ? I

5.5. rn1101f-1106f_ xa-b-c-d-e-f_sot490.pdf Size:147K _toshiba

1F?RN1106F Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit ICBO VCB = 50V, IE = 0 ? ? 100 Collector cut-off RN1101F ? nA current ~1106F ICEO VCE = 50V, IB = 0 ? ? 500 RN1101F 0.82 ? 1.52 RN1102F 0.38 ? 0.71 VEB = 10V, IC = 0 RN1103F 0.17 ? 0.33 Emitter cut-off current IEBO ? mA RN1104F 0.082 ? 0.15 RN1105F 0.078 ? 0.145 VEB = 5V, IC = 0 RN1106F 0.074 ? 0.138 RN1101F 30 ? ? RN1102F 50 ? ? RN1103F 70 ? ? D

5.6. rn1107ct_rn1109ct_090413.pdf Size:151K _toshiba

T VEBO 7 V RN1109CT 15 Collector current IC 50 mA Collector power dissipation PC 50 mW RN1107CT to RN1109CT Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) ar

5.7. rn1101ft-1106ft_ xa-b-c-d-e-f_ sot623.pdf Size:211K _toshiba

voltage VCBO 50 V RN1101FT~1106FT Collector-emitter voltage VCEO 50 V RN1101FT~1104FT 10 Emitter-base voltage VEBO V RN1105FT, RN1106FT 5 Collector current IC 100 mA Collector power dissipation PC 100 mW RN1101FT~1106FT Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C R2 RN1101FT~RN1106FT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = 50 V, IE = 0 ? ? 100 Collector cut-off current RN1101FT~

5.8. rn1107act_rn1109act_090413.pdf Size:164K _toshiba

ctor-emitter voltage VCEO 50 V RN1107ACT 6 Emitter-base voltage RN1108ACT VEBO 7 V RN1109ACT 15 Collector current IC 80 mA Collector power dissipation PC (Note1) 100 mW RN1107ACT to RN1109ACT Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

5.9. rn1101fs-1106fs_ l0-1-2-3-4-5_sot823.pdf Size:98K _toshiba

Emitter-base voltage VEBO V RN1105FS, 1106FS 5 Collector current IC 50 mA Collector power dissipation PC 50 mW RN1101FS~RN1106FS Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C 0.15±0.05 0.2±0.05 0.6±0.05 0.35±0.05 -0.04 +0.02 0.48 R2 RN1101FS~RN1106FS Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = 20 V, IE = 0 ? ? 100 Collector cut-off current RN1101FS~1106FS nA ICEO VCE = 20 V, IB =

5.10. rn1101act_rn1106act_100311.pdf Size:168K _toshiba

1101ACT to 1106ACT Collector-emitter voltage VCEO 50 V RN1101ACT to 1104ACT 10 Emitter-base voltage VEBO V RN1105ACT, 1106ACT 5 Collector current IC 80 mA Collector power dissipation PC (Note1) 100 mW RN1101ACT to 1106ACT Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note1: Mounted on FR4 board (10 mm ? 10 mm ? 1 mm) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in t

5.11. rn1101-1106_ xa-b-c-d-e-f sot416.pdf Size:134K _toshiba

= 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit ICBO VCB = 50V, IE = 0 ? ? 100 Collector cut-off RN1101~1106 ? nA current ICEO VCE =50V, IB = 0 ? ? 500 RN1101 0.82 1.52 ? RN1102 0.38 0.71 ? VEB = 10V, IC = 0 RN1103 0.17 0.33 ? Emitter cut-off current IEBO ? mA RN1104 0.082 0.15 ? RN1105 0.078 ? 0.145 VEB = 5V, IC = 0 RN1106 0.074 ? 0.138 RN1101 30 ? ? RN1102 50 ? ? RN1103 70 ? ? DC current gain hFE ? VCE = 5V, IC = 10mA ?

5.12. rn1101_rn1106_071101.pdf Size:566K _toshiba

ontinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”)

5.13. rn1107_rn1109_100406.pdf Size:339K _toshiba

usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and ind

Anderen transistoren... RN1103FS , RN1103MFV , RN1103 , RN1104ACT , RN1104CT , RN1104FS , RN1104MFV , RN1104 , BC517 , RN1105CT , RN1105FS , RN1105MFV , RN1105 , RN1106ACT , RN1106CT , RN1106FS , RN1106MFV .