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RN1118
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: RN1118
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT-416_SC-75_SSM
Ersatz (vergleichstyp) für RN1118
RN1118
- PDF-Dokument zum Download bereitstellen...
1.1. rn1114ft_rn1118ft_100406.pdf  Size:187K _toshiba  |
 | 0 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability |
1.2. rn1114mfv_rn1115mfv_rn1116mfv_rn1117mfv_rn1118mfv.pdf Size:174K _toshiba  |
 |
RN1117MFV 15
0.45mm
RN1118MFV 25
0.4mm
Collector current IC 100 mA
Collector power dissipation RN1114MFV PC (Note 1) 150 mW
to 111M8FV
Junction temperature Tj 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating te |
1.3. rn1114-rn1118.pdf Size:160K _toshiba  |
 | cs (Ta = 25°
°C)
°
°
Test
Characteristic Symbol Test Condition Min Typ. Max Unit
Circuit
RN1114~1118 ICBO ? VCB = 50V, IE = 0 ? ? 100 nA
Collector cut-off current
RN1114~1118 ICEO ? VCE = 50V, IB = 0 ? ? 500 nA
RN1114 ? VEB = 5V, IC = 0 0.35 ? 0.65
RN1115 ? VEB = 6V, IC = 0 0.37 ? 0.71
Emitter cut-off current RN1116 IEBO ? VEB = 7V, IC = 0 0.36 ? 0.68 mA
RN1117 ? VEB = 15V, IC = 0 0.78 ? 1.46
RN1118 ? VEB = 25V, IC = 0 0.33 ? 0.63
RN1114~16, 18 ? 50 ? ?
DC current gain hFE VCE |
1.4. rn1114f_rn1118f_100406.pdf Size:209K _toshiba  |
 | 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating |
1.5. rn1114_rn1118_100406.pdf Size:207K _toshiba  |
 | ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Method |
Anderen transistoren... RN1116
, RN1117FT
, RN1117F
, RN1117MFV
, RN1117
, RN1118FT
, RN1118F
, RN1118MFV
, 2SC2073
, RN1119MFV
, RN1130MFV
, RN1131MFV
, RN1132MFV
, RN1301
, RN1302
, RN1303
, RN1304
.
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