| |
RN1602
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: RN1602
Werkstoff: Si
Polarity: NPN*NPN
Gesamt-Verlustleistung (Pc): 0
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT26_SC-74_SM6
Ersatz (vergleichstyp) für RN1602
RN1602
PDF doc:
5.1. rn1601-rn1606.pdf  Size:142K _toshiba  |
 | RN1601~RN1606
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1601,RN1602,RN1603
RN1604,RN1605,RN1606
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2601~RN2606
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1601 4.7 4.7
RN1602 10 10
RN1603 22 22
RN1604 47 47
JEDEC ?
RN1605 2.2 47
EIAJ ?
RN1606 4.7 47
TOSHIBA 2-3N1A
Weight: 0.015g
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°
°C) (Q1, Q2 Common)
°
°
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1601~1606
Collector-emitter voltage VCEO 50 V
RN1601~1604 10
Emitter-base voltage VEBO V
RN1605, 1606 5
Collector current IC 100 mA
Collector power dissipation PC* 300 mW
RN1601~1606
J |
5.2. rn1607-rn1609.pdf Size:135K _toshiba  |
 | RN1607~RN1609
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1607,RN1608,RN1609
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2607~RN2609
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1607 10 47
RN1608 22 47
RN1609 47 22
JEDEC ?
EIAJ ?
TOSHIBA 2-3N1A
Weight: 0.015g
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°
°C) (Q1, Q2 Common)
°
°
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1607~1609
Collector-emitter voltage VCEO 50 V
RN1607 6
Emitter-base voltage RN1608 VEBO 7 V
RN1609 15
Collector current IC 100 mA
Collector power dissipation PC 300 mW
RN1607~1609
Junction temperature Tj 150 C
Storage temperature range Tstg -55~150 |
Anderen transistoren... RN1506
, RN1507
, RN1508
, RN1509
, RN1510
, RN1511
, RN1544
, RN1601
, 2N2222A
, RN1603
, RN1604
, RN1605
, RN1606
, RN1607
, RN1608
, RN1609
, RN1610
.
|
