RN1913FS . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN1913FS

Werkstoff: Si

Polarity: NPN*NPN

Gesamt-Verlustleistung (Pc): 0

Kollektor-Basis-Sperrspannung (Ucb): 0

Kollektor-Emitter-Sperrspannung (Uce): 20

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 0.05

Höchste Sperrschichttemperatur (Tj), °C:

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 0

Transistorgehäuse: SOT-963_fS6

Ersatz (vergleichstyp) für RN1913FS

RN1913FS - PDF-Dokument zum Download bereitstellen...

1.1. rn1912fs_rn1913fs_071101.pdf Size:141K _toshiba

Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC(Note 1) 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

4.1. rn1912afs_rn1913afs_071101.pdf Size:133K _toshiba

voltage VCEO 50 V Equivalent Circuit Emitter-base voltage VEBO 5 V (top view) Collector current IC 80 mA 6 5 4 Collector power dissipation PC (Note 1) 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Q2 Q1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even 1 2 3 if the oper

5.1. rn1910fe-rn1911fe.pdf Size:145K _toshiba

torage temperature range Tstg -55~150 °C 1 2 3 Note: Total rating 1 2004-07-01 RN1910FE,RN1911FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 120 ? 700 Collector-emitter saturation voltage VCE (sat) IC = 5 mA, IB = 0.25 mA ? 0.1 0.3 V Transition frequency fT

5.2. rn1910-rn1911.pdf Size:111K _toshiba

ndition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current gain hFE ? VCE = 5V, IC = 1mA 120 ? 700 ? Collector-emitter saturation voltage VCE (sat) ? IC = 5mA, IB = 0.25mA ? 0.1 0.3 V Translation frequency fT ? VCE = 10V, IC = 5mA ? 250 ? MHz ? Collector output capacitance Cob VCB = 10V, IE = 0V, f = 1MHz ? 3 6 pF RN1910 3.29 4.7 6.11 Input resistor R1 ? ? k? RN1911 7 10 13 (

5.3. rn1910afs_rn1911afs_071101.pdf Size:133K _toshiba

ht: 0.001 g (typ.) Emitter-base voltage VEBO 5 V Equivalent Circuit Collector current IC 80 mA (top view) Collector power dissipation PC (Note 1) 50 mW 6 5 4 Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Q2 Note: Using continuously under heavy loads (e.g. the application of Q1 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co

5.4. rn1910fs_rn1911fs_071101.pdf Size:120K _toshiba

-1F1D Collector-base voltage VCBO 20 V Weight: 0.001g (typ.) Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Equivalent Circuit Collector power dissipation PC(Note 1) 50 mW (top view) Junction temperature Tj 150 °C 6 5 4 Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, Q2 Q1 etc.) may cause thi

Anderen transistoren... RN1910 , RN1911AFS , RN1911FE , RN1911FS , RN1911 , RN1912AFS , RN1912FS , RN1913AFS , 2N5133 , RN1961CT , RN1961FE , RN1961FS , RN1961 , RN1962CT , RN1962FE , RN1962FS , RN1962 .