RN2113ACT >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

wer dissipation PC 100 * mW Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C * : Mounted on FR4 board (10 mm ? 10 mm ? 1 mmt) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratin

4.1. rn2112ft-rn2113ft.pdf Size:124K _toshiba

n temperature Tj 150 �C Storage temperature range Tstg -55~150 �C 1 2004-02-27 RN2112FT,RN2113FT Electrical Characteristics (Ta = 25�C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ? ? -100 nA DC current gain hFE VCE = -5 V, IC = -1 mA 120 ? 700 Collector-emitter saturation voltage VCE (sat) IC = -5 mA, IB = -0.25 mA ? -0.1 -0.3 V Transition frequency fT VCE = -

4.2. rn2112fs_rn2113fs.pdf Size:94K _toshiba

ing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Concept and Metho

4.3. rn2112-rn2113.pdf Size:109K _toshiba

gain hFE ? VCE = -5V, IC = -1mA 120 ? 400 ? Collector-emitter saturation voltage VCE (sat) ? IC = -5mA, IB = -0.25mA ? -0.1 -0.3 V Transition frequency fT ? VCE = -10V, IC = -5mA ? 200 ? MHz Collector output capacitance Cob ? VCB = -10V, IE = 0, f = 1MHz ? 3 6 pF RN2112 15.4 22 28.6 Input resistor R1 ? ? k? RN2113 32.9 47 61.1 1 2001-06-07 RN2112,RN2113 2 2001-06-07

4.4. rn2112mfv_rn2113mfv.pdf Size:290K _toshiba

te 1) 150 mW Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revie

4.5. rn2112f_rn2113f_071101.pdf Size:276K _toshiba

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Concept and Methods�) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 RN2112F,RN2113F Electrical Characteristics (Ta = 25�C) Test Characteristic Symbol Test Condition Min Typ. Max

4.6. rn2112ct_rn2113ct_090417.pdf Size:134K _toshiba

-55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Dera

Anderen transistoren... RN2111F , RN2111MFV , RN2111 , RN2112ACT , RN2112CT , RN2112FS , RN2112MFV , RN2112 , 2N3904 , RN2113CT , RN2113FS , RN2113F , RN2113MFV , RN2113 , RN2114MFV , RN2114 , RN2115F .


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