RN2119MFV >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

crease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Concept and Methods�) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm ? 25.4 mm ? 1.6 mmt) Land P

5.1. rn2112ft-rn2113ft.pdf Size:124K _toshiba

n temperature Tj 150 �C Storage temperature range Tstg -55~150 �C 1 2004-02-27 RN2112FT,RN2113FT Electrical Characteristics (Ta = 25�C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ? ? -100 nA DC current gain hFE VCE = -5 V, IC = -1 mA 120 ? 700 Collector-emitter saturation voltage VCE (sat) IC = -5 mA, IB = -0.25 mA ? -0.1 -0.3 V Transition frequency fT VCE = -

5.2. rn2110ct_rn2111ct_090417.pdf Size:154K _toshiba

55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derat

5.3. rn2114f_rn2118f_071101.pdf Size:179K _toshiba

0 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Con

5.4. rn2112act_rn2113act_090417.pdf Size:153K _toshiba

wer dissipation PC 100 * mW Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C * : Mounted on FR4 board (10 mm ? 10 mm ? 1 mmt) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratin

5.5. rn2110act_rn2111act_090417.pdf Size:152K _toshiba

dissipation PC (Note) 100 mW Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C Note: Mounted on FR4 board (10 mm ? 10 mm ? 1 mmt) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

5.6. rn2110ft-rn2111ft.pdf Size:122K _toshiba

n temperature Tj 150 �C Storage temperature range Tstg -55~150 �C 1 2004-03-01 RN2110FT,RN2111FT Electrical Characteristics (Ta = 25�C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ? ? -100 nA DC current gain hFE VCE = -5 V, IC = -1 mA 120 ? 400 Collector-emitter saturation voltage VCE (sat) IC = -5 mA, IB = -0.25 mA ? -0.1 -0.3 V Transition frequency fT VCE = -

5.7. rn2110mfv_rn2111mfv.pdf Size:163K _toshiba

e 1) 150 mW Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewi

5.8. rn2112fs_rn2113fs.pdf Size:94K _toshiba

ing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Concept and Metho

5.9. rn2110f-rn2111f.pdf Size:109K _toshiba

e responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in

5.10. rn2112-rn2113.pdf Size:109K _toshiba

gain hFE ? VCE = -5V, IC = -1mA 120 ? 400 ? Collector-emitter saturation voltage VCE (sat) ? IC = -5mA, IB = -0.25mA ? -0.1 -0.3 V Transition frequency fT ? VCE = -10V, IC = -5mA ? 200 ? MHz Collector output capacitance Cob ? VCB = -10V, IE = 0, f = 1MHz ? 3 6 pF RN2112 15.4 22 28.6 Input resistor R1 ? ? k? RN2113 32.9 47 61.1 1 2001-06-07 RN2112,RN2113 2 2001-06-07

5.11. rn2114_rn2118_071101.pdf Size:161K _toshiba

r heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Concept and Methods�) and individual r

5.12. rn2112mfv_rn2113mfv.pdf Size:290K _toshiba

te 1) 150 mW Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revie

5.13. rn2114ft_rn2118ft_071101.pdf Size:175K _toshiba

150 �C Storage temperature range Tstg -55~150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Ha

5.14. rn2110fs_rn2111fs_071101.pdf Size:114K _toshiba

stg -55~150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precaution

5.15. rn2112f_rn2113f_071101.pdf Size:276K _toshiba

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Derating Concept and Methods�) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 RN2112F,RN2113F Electrical Characteristics (Ta = 25�C) Test Characteristic Symbol Test Condition Min Typ. Max

5.16. rn2114mfv_rn2115mfv_rn2116mfv_rn2117mfv_rn2118mfv.pdf Size:200K _toshiba

ector-base voltage RN2114MFV VCBO -50 V to Collector-emitter voltage VCEO -50 V RN2118MFV RN2114MFV -5 RN2115MFV -6 Emitter-base voltage RN2116MFV VEBO -7 V RN2117MFV -15 RN2118MFV -25 Collector current IC -100 mA RN2114MFV Collector power dissipation PC(Note1) 150 mW to Junction temperature Tj 150 �C RN2118MFV Storage temperature range Tstg -55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the si

5.17. rn2112ct_rn2113ct_090417.pdf Size:134K _toshiba

-55 to 150 �C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (�Handling Precautions�/�Dera

5.18. rn2110-rn2111.pdf Size:102K _toshiba

V, IC = -1mA 120 ? 400 ? Collector-emitter saturation voltage VCE (sat) ? IC = -5mA, IB = -0.25mA ? -0.1 -0.3 V Transition frequency fT ? VCE = -10V, IC = -5mA ? 200 ? MHz Collector output capacitance Cob ? VCB = -10V, IE = 0, f = 1MHz ? 3 6 pF RN2110 3.29 4.7 6.11 Input resistor R1 ? ? k? RN2111 7 10 13 1 2001-06-07 RN2110,RN2111 2 2001-06-07

Anderen transistoren... RN2117FT , RN2117F , RN2117MFV , RN2117 , RN2118FT , RN2118F , RN2118MFV , RN2118 , BC147 , RN2130MFV , RN2131MFV , RN2132MFV , RN2301 , RN2302 , RN2303 , RN2304 , RN2305 .


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