RN2131MFV
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: RN2131MFV
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SOT-723_VESM
Ersatz (vergleichstyp) für RN2131MFV
RN2131MFV
- PDF-Dokument zum Download bereitstellen...
1.1. rn2131mfv_rn2132mfv.pdf  Size:165K _toshiba  |
 | significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). |
5.1. rn2130mfv.pdf Size:153K _toshiba  |
 | s (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability d |
Anderen transistoren... RN2117MFV
, RN2117
, RN2118FT
, RN2118F
, RN2118MFV
, RN2118
, RN2119MFV
, RN2130MFV
, KD503
, RN2132MFV
, RN2301
, RN2302
, RN2303
, RN2304
, RN2305
, RN2306
, RN2307
.
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