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2SC5087
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2SC5087
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.15
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 12
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.08
Höchste Sperrschichttemperatur (Tj), °C: 125
Transitfrequenz (ft): 7000
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: SMQ(2.9x2.9)
Ersatz (vergleichstyp) für 2SC5087
2SC5087
- PDF-Dokument zum Download bereitstellen...
1.1. 2sc5087r_101223.pdf  Size:100K _toshiba  |
 |
Please design the appropriate reliability upon reviewing the
TOSHIBA ?
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 12 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
Characteristic Symbol Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 30 mA 6 8 ? GHz
?S21e?2 (1) VCE = 5 V, IC = 20 mA, f = 1 GHz ? |
1.2. 2sc5087.pdf Size:476K _toshiba  |
 | V, IC = 5 mA, f = 2 GHz ? 1.1 2
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 10 V, IC = 20 mA 80 ? 240
(Note 1)
Output capacitance Cob ? 1.1 1.6 pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.65 1.05 pF
Note 1: hFE classification O: 80~160, Y: 120~240 |
4.1. 2sc5086ft.pdf Size:125K _toshiba  |
 | = 10 V, IC = 5 mA, f = 1 GHz ? 1.1 2
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 10 V, IC = 20 mA 80 ? 240
(Note 1)
Output capacitance Cob ? 1.0 ? pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.65 1.15 pF
Note 1: hFE classification O: 80~160, Y: 12 |
4.2. 2sc5089.pdf Size:465K _toshiba  |
 | IC = 5 mA, f = 2 GHz ? 1.7 ?
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 8 V, IC = 20 mA 50 ? 160
(Note 1)
Output capacitance Cob ? 0.7 ? pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.5 0.95 pF
Note 1: hFE classification R: 50~100, O: 80~160
Note |
4.3. 2sc5085.pdf Size:471K _toshiba  |
 | = 10 V, IC = 5 mA, f = 1 GHz ? 1.1 2
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 10 V, IC = 20 mA 80 ? 240
(Note 1)
Output capacitance Cob ? 1.0 ? pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.65 1.15 pF
Note 1: hFE classification O: 80~160, Y: 120~2 |
4.4. 2sc5086.pdf Size:474K _toshiba  |
 | V, IC = 5 mA, f = 1 GHz ? 1.1 2
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 10 V, IC = 20 mA 80 ? 240
(Note 1)
Output capacitance Cob ? 1.0 ? pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.65 1.15 pF
Note 1: hFE classification O: 80~160, Y: 120~240
|
4.5. 2sc5084.pdf Size:474K _toshiba  |
 | = 10 V, IC = 5 mA, f = 1 GHz ? 1.1 2
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 10 V, IC = 20 mA 80 ? 240
(Note 1)
Output capacitance Cob ? 1.0 ? pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.65 1.15 pF
Note 1: hFE classification O: 80~160, Y: 120~2 |
4.6. 2sc5088.pdf Size:481K _toshiba  |
 | V, IC = 5 mA, f = 1 GHz ? 1.1 2
Electrical Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 1 µA
Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 1 µA
hFE
DC current gain VCE = 10 V, IC = 20 mA 80 ? 240
(Note 1)
Output capacitance Cob ? 1.1 1.6 pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance Cre ? 0.65 1.05 pF
Note 1: hFE classification O: 80~160, Y: 120~240 |
4.7. 2sc5081.pdf Size:25K _hitachi  |
 | llector output capacitance Cob — 0.4 0.75 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 10.5 13.5 — GHz VCE = 5 V, IC = 20 mA
Power gain PG 15 18 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “ZD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC5080.
2
2SC5081
Maxim |
4.8. 2sc5080.pdf Size:48K _hitachi  |
 | lector output capacitance Cob — 0.4 0.75 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 10.5 13.5 — GHz VCE = 5 V, IC = 20 mA
Power gain PG 15 18 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “ZD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC5080
DC Current Transfer Ratio vs.
Maximum Collec |
4.9. 2sc508.pdf Size:123K _inchange_semiconductor Anderen transistoren... 2SC4250FV
, 2SC4915
, 2SC5064
, 2SC5065
, 2SC5066
, 2SC5084
, 2SC5085
, 2SC5086
, 2SC1815
, 2SC5087R
, 2SC5088
, 2SC5092
, 2SC5095
, 2SC5096
, 2SC5106
, 2SC5107
, 2SC5108
.
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