2N6306
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N6306
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 125
Kollektor-Basis-Sperrspannung (Ucb): 500
Kollektor-Emitter-Sperrspannung (Uce): 250
Emitter-Basis-Sperrspannung (Ueb): 8
Kollektorstrom (Ic): 8
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 5
Kollektor-Kapazität (Cc), pF: 250
Kurzschluss-Stromverstärkung (hfe): 15
Transistorgehäuse: TO3
Ersatz (vergleichstyp) für 2N6306
2N6306
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1.1. 2n6306_2n6307_2n6308.pdf Size:62K _central 1.2. 2n6306_2n6308.pdf Size:54K _microsemi |
| 8 5.0
BE
Collector-Emitter Cutoff Current
VCE = 250 Vdc 2N6306 ICEO µAdc
50
VCE = 350 Vdc 2N6308 50
Emitter-Base Cutoff Current
IEBO µAdc
5.0
VEB = 8 Vdc
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2N6306, 2N6308 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
15 75
IC = 3.0 Adc; VCE = 5.0 Vdc 2N6306
12 6 |
1.3. 2n6306.pdf Size:128K _inchange_semiconductor |
| AX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 250 V
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 0.8 V
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=2A 5.0 V
VBEsat Base-emitter saturation voltage IC=8A; IB=2A 2.3 V
VBE Base-emitter on voltage IC=3A ; VCE=5V 1.3 V
ICEV Collector cut-off current VCE=500V; VBE=-1.5V 0.5 mA
ICEO Collector cut-off current VCE=250V; IB=0 0.5 mA
IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA
hFE-1 DC current |
Anderen transistoren... 2N63
, 2N630
, 2N6300
, 2N6301
, 2N6302
, 2N6303
, 2N6304
, 2N6305
, 100DA025D
, 2N6307
, 2N6307M
, 2N6308
, 2N6308M
, 2N6309
, 2N631
, 2N6310
, 2N6311
.
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