2N6312
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N6312
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 75
Kollektor-Basis-Sperrspannung (Ucb): 40
Kollektor-Emitter-Sperrspannung (Uce): 40
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 5
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 4
Kollektor-Kapazität (Cc), pF: 800
Kurzschluss-Stromverstärkung (hfe): 25
Transistorgehäuse: TO66
Ersatz (vergleichstyp) für 2N6312
2N6312
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1.1. 2n6312_2n6313_2n6314_2n4231a_2n4232a_2n4233a.pdf  Size:196K _bocasemi 1.2. 2n6312_2n6313_2n6314.pdf Size:131K _inchange_semiconductor  |
 | onductor Product Specification
Silicon PNP Power Transistors 2N6312 2N6313 2N6314
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N6312 -40
Collector-emitter
VCEO(SUS) 2N6313 IC=-0.1A ;IB=0 -60 V
sustaining voltage
2N6314 -80
VCEsat-1 Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -0.7 V
VCEsat-2 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -2.0 V
VCEsat-3 Collector-emitter saturation voltage IC=-5A; IB=-1.25A |
5.1. 2n6315-18.pdf Size:165K _mospec 5.2. 2n6315_2n6316.pdf Size:131K _inchange_semiconductor  |
 | tion
Silicon NPN Power Transistors 2N6315 2N6316
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N6315 60
Collector-emitter
VCEO(SUS) IC=0.1A ;IB=0 V
sustaining voltage
2N6316 80
VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4 A 1.0 V
VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=1.75A 2.0 V
VBEsat Base-emitter saturation voltage IC=7A; IB=1.75A 2.5 V
VBE Base-emitter on voltage IC=2.5A ; VCE=4V 1.5 V
2N |
5.3. 2n6317_2n6318.pdf Size:131K _inchange_semiconductor  |
 | ecification
Silicon PNP Power Transistors 2N6317 2N6318
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N6317 -60
Collector-emitter
VCEO(SUS) IC=-0.1A ;IB=0 V
sustaining voltage
2N6318 -80
VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4 A -1.0 V
VCEsat-2 Collector-emitter saturation voltage IC=-7A; IB=-1.75A -2.0 V
VBEsat Base-emitter saturation voltage IC=-7A; IB=-1.75A -2.5 V
VBE Base-emitter on voltage IC=-2.5 |
Anderen transistoren... 2N6307
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.
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