2N6420 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N6420

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 35

Kollektor-Basis-Sperrspannung (Ucb): 175

Kollektor-Emitter-Sperrspannung (Uce): 175

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 1

Höchste Sperrschichttemperatur (Tj), °C: 200

Transitfrequenz (ft): 10

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 40

Transistorgehäuse: TO66

Ersatz (vergleichstyp) für 2N6420

2N6420 - PDF-Dokument zum Download bereitstellen...

1.1. 2n3583_2n3584_2n3585_2n4240_2n6420_2n6421_2n6422_2n6423.pdf Size:224K _bocasemi

1.2. 2n6420.pdf Size:188K _inchange_semiconductor

isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V Collector-Emitter Sustaining Voltage I = -50mA ; I = 0 -175 V CEO(SUS) C B Collector-Emitter Saturation Voltage I = -1A; I = -0.125A -5.0 V V C B CE (sat) Base-Emitter On Voltage I = -1A ; V = -10V -1.4 V V C CE BE( ) on I Collector Cuto

5.1. 2n583_2n584_2n640_2n641_2n642_2n643_2n644_2n645_2n656_2n696.pdf Size:298K _rca

5.2. 2n6426_2n6427.pdf Size:212K _motorola

O 40 — — Vdc (IC = 10 mAdc, VBE = 0) Collector–Base Breakdown Voltage V(BR)CBO 40 — — Vdc (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 12 — — Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICES — — 1.0 mAdc (VCE = 25 Vdc, IB = 0) Collector Cutoff Current ICBO — — 50 nAdc (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current IEBO — — 50 nAdc (VEB= 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices

5.3. 2n6427_1.pdf Size:49K _philips

CE = 5 V; f = 100 MHz 125 - MHz 1997 Jul 04 2 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCES collector-emitter voltage VBE =0 - 30 V VEBO emitter-base voltage open collector - 10 V IC collector current (DC) - 500 mA ICM peak collector current - 800 mA IB base current (DC) - 200

5.4. 2n6426.pdf Size:295K _fairchild_semi

vice Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R Thermal Resistance, Junction to Ambient 200 °C/W ?JA © 1997 Fairchild Semiconductor Corporation 2N6426 NPN Darlington Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V V(BR)CBO Collector-Base Breakdown Voltage

5.5. 2n6427_mmbt6427.pdf Size:706K _fairchild_semi

6427 PD Total Device Dissipation 625 350 mW Derate above 25 C 5.0 2.8 mW/ C ° ° R?JC Thermal Resistance, Junction to Case 83.3 C/W ° R?JA Thermal Resistance, Junction to Ambient 200 357 C/W ° *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 2N6427 / MMBT6427 NPN Darlington Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collect

5.6. 2n6428a.pdf Size:35K _samsung

5.7. 2n6428.pdf Size:34K _samsung

5.8. 2n6425.pdf Size:11K _semelab

the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Generated 1-Aug-02 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 0.71 (0.028) 0.86 (0.034) 24.13 (0.95) 24.63 (0.97) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590)

Anderen transistoren... 2N6413 , 2N6414 , 2N6415 , 2N6416 , 2N6417 , 2N6418 , 2N6419 , 2N642 , AC128 , 2N6421 , 2N6422 , 2N6423 , 2N6424 , 2N6425 , 2N6425A , 2N6426 , 2N6427 .