| |
2N652A
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N652A
Werkstoff: Ge
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.2
Kollektor-Basis-Sperrspannung (Ucb): 45
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 30
Kollektorstrom (Ic): 0.5
Höchste Sperrschichttemperatur (Tj), °C: 90
Transitfrequenz (ft): 1.2
Kollektor-Kapazität (Cc), pF: 20
Kurzschluss-Stromverstärkung (hfe): 100
Transistorgehäuse: TO5
Ersatz (vergleichstyp) für 2N652A
2N652A
- PDF-Dokument zum Download bereitstellen...
5.1. 2n6515_2n6517_2n6519_2n6520.pdf  Size:229K _motorola  |
 | n to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N6515 250 —
2N6519 300 —
2N6517, 2N6520 350 —
Collector–Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0 ) 2N6515 250 —
2N6519 300 —
2N6517, 2N6520 350 —
Emitter–Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 µAdc, IC = 0) 2N6515, 2N6517 6.0 —
2N6519, 2N6520 |
5.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola  |
 | nt RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N6515 250 —
2N6516, 2N6519 300 —
2N6517, 2N6520 350 —
Collector–Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0 ) 2N6515 250 —
2N6516, 2N6519 300 —
2N6517, 2N6520 350 —
Emitter–Base Breakdown Voltage V(BR)EBO Vdc
|
5.3. 2n6520.pdf Size:156K _fairchild_semi  |
 | -350 V
BVEBO Emitter-Base Breakdown Voltage IE= -10?A, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -250V, IE=0 -50 nA
IEBO Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
hFE * DC Current Gain VCE= -10V, IC= -1mA 20
VCE= -10V, IC= -10mA 30
VCE= -10V, IC= -30mA 30 200
VCE= -10V, IC= -50mA 20 200
VCE= -10V, IC= -100mA 15
VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.30 V
IC= -20mA, IB= -2mA -0.35 V
IC= -30mA, IB= -3mA -0.50 V
IC= -50mA, IB= -5mA -1 V
VBE (sat) |
5.4. 2n6520.pdf Size:81K _samsung  |
 | 0
VCE= -10V, IC= -100mA
15
IC= -10mA, IB= -1mA
Collector-Emitter Saturation Voltage VCE (sat) -0.30 V
IC= -20mA, IB= -2mA
-0.35 V
IC= -30mA, IB= -3mA
-0.50 V
IC= -50mA, IB= -5mA
-1 V
IC= -10mA, IB= -1mA
Base-Emitter Saturation Voltage
VBE (sat) -0.75 V
IC= -20mA, IB= -2mA
-0.85 V
IC= -30mA, IB= -3mA
-0.90 V
Base-Emitter On Voltage VCE= -10V, IC= -100mA
VBE (on) -2 V
Current Gain Bandwidth Product VCE= -20V, IC= -10mA
MHz
fT 200
40
Collector-Base Capacitance pF
CCB VC |
5.5. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi  |
 | tance, Junction-to-Ambient RqJA 200 °C/W
Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum 2N
Ratings are stress ratings only. Functional operation above the Recommended
65xx
Operating Conditions is not implied. Extended exposure to stresses above the
AYWW G
Recommended Operating Conditions may affect device reliability.
G
xx = 15, 17, or 20
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: M |
5.6. 2n6520.pdf Size:237K _secos  |
 | age V(BR)CBO -350 - - V IC= -100?A, IE = 0A
Collector to Emitter Breakdown Voltage V(BR)CEO * -350 - - V IC= -1mA, IB = 0A
Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -10?A, IC = 0A
Collector Cut-Off Current ICBO - - -50 nA VCB= -250V, IE = 0 A
Emitter Cut-Off Current IEBO - - -50 nA VEB= -4V, IC =0 mA
20 - - VCE= -10V, IC= -1mA
30 - - VCE= -10V, IC= -10mA
DC Current Gain hFE * 30 - 200 VCE= -10V, IC= -30mA
20 - 200 VCE= -10V, IC= -50mA
15 - - VCE= -10V, IC= -100mA |
Anderen transistoren... 2N6522
, 2N6523
, 2N6524
, 2N6525
, 2N6526
, 2N6527
, 2N6528
, 2N6529
, 2SC1815
, 2N653
, 2N6530
, 2N6531
, 2N6532
, 2N6533
, 2N6534
, 2N6535
, 2N6536
.
|
