2N6670 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N6670

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 10

Kollektor-Basis-Sperrspannung (Ucb): 100

Kollektor-Emitter-Sperrspannung (Uce): 50

Emitter-Basis-Sperrspannung (Ueb): 3

Kollektorstrom (Ic): 1.5

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 40

Kollektor-Kapazität (Cc), pF: 50

Kurzschluss-Stromverstärkung (hfe): 30

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für 2N6670

2N6670 - PDF-Dokument zum Download bereitstellen...

5.1. 2n6676-78.pdf Size:137K _mospec

5.2. 2n6671.pdf Size:345K _no

5.3. 2n6674_2n6675_2n6689_2n6690.pdf Size:60K _microsemi

Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage 300 Vdc IC = 200 mAdc 2N6674, 2N6689 V (BR) CEO 400 2N6675, 2N6690 Collector-Emitter Cutoff Current 0.1 mAdc VCE = 450 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689 ICEX 0.1 VCE = 650 Vdc, VBE = -1.5 Vdc 2N6675, 2N6690 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax: (978

5.4. 2n6676_2n6678_2n6691_2n6693.pdf Size:70K _microsemi

A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage 300 Vdc IC = 200 mAdc 2N6676, 2N6691 V (BR) CEO 400 2N6678, 2N6693 Collector-Emitter Cutoff Current 0.1 mAdc VCE = 450 Vdc, VBE = 1.5 Vdc 2N6676, 2N6691 ICEX 0.1 VCE = 650 Vdc, VBE = 1.5 Vdc 2N6678, 2N6693 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax:

5.5. 2n6671_2n6672_2n6673.pdf Size:117K _inchange_semiconductor

5.6. 2n66762n66772n6678.pdf Size:118K _inchange_semiconductor

15 20 5 V A A A W Ўж Ўж Tc=25Ўж 175 200 -65~200

5.7. 2n6674_6675.pdf Size:176K _inchange_semiconductor

UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6674/6675 ELECTRICAL CHARACTERISTICS T =25? unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN MAX UNIT 2N6674 300 Collector-Emitter V I = 200mA ; I = 0 V (BR)CEO C B Breakdown Voltage 2N6675 400 Collector-Emitter Saturation Voltage I = 10A; I = 2A 1.0 V V C B CE (sat)-

5.8. 2n6676_2n6677_2n6678.pdf Size:131K _inchange_semiconductor

Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6676 300 Collector-emitter VCEO(SUS) 2N6677 IC=0.2A ; IB=0 350 V sustaining voltage 2N6678 400 VCEsat Collector-emitter saturation voltage IC=15A; IB=3A 1.5 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A 1.5 V VCE=RatedVCEV;VBE(off)=-1.5V 0.1 ICEV Collector cut-off current mA TC=100? 1.0 IEBO

5.9. 2n6674_2n6675.pdf Size:130K _inchange_semiconductor

N6675 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6674 300 VCEO(SUS) Collector-emitter IC=0.2A ;IB=0 V sustaining voltage 2N6675 400 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=5A 5.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.5 V 2N6674 VCB=450V; IE=0 ICBO Collector cut-off current 0.1 mA 2N6675 VCB=650V; IE=0 IEBO Emitter cut-of

Anderen transistoren... 2N6655-2 , 2N6655A , 2N6655B , 2N6665 , 2N6666 , 2N6667 , 2N6668 , 2N6669 , C103 , 2N6671 , 2N6672 , 2N6673 , 2N6674 , 2N6675 , 2N6676 , 2N6677 , 2N6678 .