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RN2609 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN2609

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 0.3

Kollektor-Basis-Sperrspannung (Ucb): 50

Kollektor-Emitter-Sperrspannung (Uce): 50

Emitter-Basis-Sperrspannung (Ueb): 15

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 200

Kollektor-Kapazität (Cc), pF: 3

Kurzschluss-Stromverstärkung (hfe): 70

Transistorgehäuse: SOT26_SC74_SM6

Ersatz (vergleichstyp) für RN2609

RN2609 PDF:

1.1. rn2607-rn2609.pdf Size:145K _toshiba

RN2609
RN2609

RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

5.1. rn2601-rn2606.pdf Size:154K _toshiba

RN2609
RN2609

RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Anderen transistoren... CXT491E , CXT5401E , CXT5551E , CXT5551HC , CXT591E , CXT7090L , CXT7410 , CXT7820 , 2N3055 , CTLM3410-M832D , CTLM3474-M832D , CTLM7410-M832D , CTLT3410-M621 , CTLT5551-M832D , CTLT7410-M621 , CTLT8099-M322S , CTLT853-M833 .

 


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