IXGH40N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH40N60B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 600V

Voltaje de saturación colector-emisor (Ucesat): 2.1V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 180

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH40N60B - PDF Hoja de especificaciones para ver o descargar...

1.1. ixgh40n60b2d1_ixgt40n60b2d1.pdf Size:606K _ixys

� ?P 3.55 3.65 .140 .144 � Q 5.89 6.40 0.232 0.252 Eon 0.3 mJ IC = 30 A, VGE = 15 V R 4.32 5.49 .170 .216 td(off) 240 ns S 6.15 BSC 242 BSC VCE = 400 V, RG = 3.3 ? tfi 150 ns Eoff 1.10 mJ TO-268 Outline RthJC 0.42 K/W RthCK (TO-247) 0.25 K/W Reverse Diode (FRED) Characteristic Values (TJ = 25�C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IF = 30 A, VGE = 0 V, Pulse test TJ =150�C 1.6 V t ? 300 �s, duty cycle d ? 2 % 2.5 V IRM IF = 30 A, VGE = 0 V, -di

1.2. ixgh40n60c2d1_ixgt40n60c2d1_ixgg40n60c2d1.pdf Size:162K _ixys

.084 b2 2.87 3.12 .113 .123 td(on) 18 ns C .4 .8 .016 .031 tri 20 ns � Inductive load, TJ = 125� �C � � D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Eon 0.6 mJ IC = 30A, VGE = 15V e 5.20 5.72 0.205 0.225 td(off) 130 ns L 19.81 20.32 .780 .800 VCE = 400V, RG = 3? L1 4.50 .177 tfi 80 240 ns ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Eoff 0.50 mJ R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC RthJC 0.42 �C/W RthCK (IXGH, IXGJ) 0.25 �C/W TO-268 Leaded Outline Reverse Dio

1.3. ixgh40n60b2_ixgt40n60b2.pdf Size:578K _ixys

.55 3.65 .140 .144 � Q 5.89 6.40 0.232 0.252 Eon 0.3 mJ IC = 30 A, VGE = 15 V R 4.32 5.49 .170 .216 td(off) 240 ns S 6.15 BSC 242 BSC VCE = 400 V, RG = 3.3 ? tfi 150 ns Eoff 1.10 mJ TO-268 Outline RthJC 0.42 K/W RthCK (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306

1.4. ixgh40n60c2_ixgt40n60c2.pdf Size:149K _ixys

i 20 ns � Inductive load, TJ = 125� �C � ?P 3.55 3.65 .140 .144 � Q 5.89 6.40 0.232 0.252 Eon 0.3 mJ IC = 30 A, VGE = 15 V R 4.32 5.49 .170 .216 td(off) 130 ns S 6.15 BSC 242 BSC VCE = 400 V, RG = Roff = 3 ? tfi 80 240 ns Eoff 0.50 mJ TO-268 Outline RthJC 0.42 K/W RthCK (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844

Otros transistores... IXGH36N60B3 , IXGH36N60B3C1 , IXGH36N60B3D1 , IXGH36N60B3D4 , IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , G12N60C3D , IXGH40N60B2 , IXGH40N60B2D1 , IXGH40N60C , IXGH40N60C2 , IXGH40N60C2D1 , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 .