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IXGH48N60C3D1
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: IXGH48N60C3D1
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc):
Tensión colector-emisor (Uce): 600V
Voltaje de saturación colector-emisor (Ucesat): 2.5V
Tensión emisor-compuerta (Ueg):
Corriente del colector DC máxima (Ic): 75A
Temperatura operativa máxima (Tj), °C:
Tiempo de elevación: 38
Capacitancia de salida (Cc), pF:
Empaquetado / Estuche: TO247
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- IGBT IXGH48N60C3D1
- PDF Hoja de especificaciones para ver o descargar...
1.1. ixgh48n60a3d1.pdf  Size:163K _ixys  |
 | SC 242 BSC
RthJC 0.42 C/W
RthCS 0.21 C/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
VF IF = 30A, VGE = 0V, Note 1 3.0 V
TJ = 150C 1.6 V
IRM IF = 30A, VGE = 0V, TJ = 100C 4 A
trr -diF/dt = 100A/?s, VR = 100V TJ = 100C 100 ns
IF = 1A, -di/dt = 100A/?s, VR = 30V 25 ns
RthJC 0.9 C/W
Note 1: Pulse test, t ? 300?s; duty cycle, d ? 2%.
IXYS reserves the right to change limits, test conditions and dimension |
1.2. ixgh48n60b3c1.pdf Size:187K _ixys  |
 | 77
td(off) 190 ns
VCE = 480V, RG = 5?
?P 3.55 3.65 .140 .144
tfi 157 ns
Q 5.89 6.40 0.232 0.252
Note 2
R 4.32 5.49 .170 .216
Eoff 1.30 mJ
S 6.15 BSC 242 BSC
RthJC 0.42 C/W
RthCS 0.21 C/W
Reverse Diode (SiC)
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 20A, VGE = 0V, Note 1 1.65 2.10 V
TJ = 125C 1.80 V
RthJC 0.90 C/W
Notes
1. Pulse test, t ? 300?s, duty cycle, d ? 2%.
2. Switching times & energy losses may inc |
1.3. ixgh48n60c3c1.pdf Size:185K _ixys  |
 | .205 0.225
L 19.81 20.32 .780 .800
td(off) VCE = 400V, RG = 3? 92 ns
L1 4.50 .177
Note 2
tfi 95 ns
?P 3.55 3.65 .140 .144
Eoff 0.57 mJ Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
RthJC 0.42 C/W
RthCS 0.21 C/W
Reverse Diode (SiC)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 20A, VGE = 0V, Note 1 1.65 2.10 V
TJ = 125C 1.80 V
RthJC 0.90 C/W
Notes
1. Pulse test, t ? 300?s, duty c ycle, d ? 2%.
2. Switching times |
1.4. ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Size:223K _ixys  |
 | ductive Load, TJ = 125C 26 ns
e 5.20 5.72 0.205 0.225
Eon 0.65 mJ
IC = 30A, VGE = 15V
L 19.81 20.32 .780 .800
L1 4.50 .177
td(off) 92 ns
VCE = 400V, RG = 3?
?P 3.55 3.65 .140 .144
tfi 95 ns
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
Eoff 0.57 mJ
S 6.15 BSC 242 BSC
RthJC 0.42 C/W
RthCS (TO-247) 0.21 C/W
TO-220 (IXGP) Outline
(TO-220) 0.50 C/W
Note 1: Pulse Test, t ? 300?s; Duty Cycle, d ? 2%.
TO-263 (IXGA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
IXYS res |
Otros transistores... IXGH45N120
, IXGH48N60A3
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