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IXGH60N60C3
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: IXGH60N60C3
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc):
Tensión colector-emisor (Uce): 600V
Voltaje de saturación colector-emisor (Ucesat): 2.5V
Tensión emisor-compuerta (Ueg):
Corriente del colector DC máxima (Ic): 75A
Temperatura operativa máxima (Tj), °C:
Tiempo de elevación: 50
Capacitancia de salida (Cc), pF:
Empaquetado / Estuche: TO247
Búsqueda de reemplazo de IXGH60N60C3
- IGBT IXGH60N60C3
- PDF Hoja de especificaciones para ver o descargar...
1.1. ixgh60n60c2_ixgt60n60c2.pdf  Size:583K _ixys  |
 | .780 .800
L1 4.50 .177
tri 25 ns
Inductive load, TJ = 125
C
?P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
Eon 0.45 mJ
IC = 50 A, VGE = 15 V
R 4.32 5.49 .170 .216
td(off) 130 ns
S 6.15 BSC 242 BSC
VCE = 400 V, RG = Roff = 2 ?
tfi 80 ns
Eoff 1.2 mJ
TO-268 Outline
RthJC 0.26 K/W
RthCK (TO-247) 0.25 K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covere |
1.2. ixgh60n60b2_ixgt60n60b2.pdf Size:578K _ixys  |
 | VGE = 15 V
Eon 0.6 mJ
?P 3.55 3.65 .140 .144
VCE = 400 V, RG = 3.3 ?
td(off) 310 ns Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
tfi Note 1 240 ns
S 6.15 BSC 242 BSC
Eoff 2.8 mJ
RthJC 0.25 K/W
TO-268 Outline
RthCK 0.15 K/W
Notes:
1. Pulse test, t < 300s wide, duty cycle < 2%.
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5 |
1.3. ixgh60n60_ixgk60n60_ixgt60n60.pdf Size:95K _ixys  |
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IC = IC90, VGE = 15 V, L = 100 mH,
tri 25 ns
G 1.65 2.13 0.065 0.084
VCE = 0.8 VCES, RG = Roff = 2.7 W
H - 4.5 - 0.177
td(off) 300 600 ns
Remarks: Switching times may increase
J 1.0 1.4 0.040 0.055
tfi 360 570 ns
for VCE (Clamp) > 0.8 VCES, higher TJ or K 10.8 11.0 0.426 0.433
Eoff increased RG 8 15 mJ
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
td(on) 50 ns
N 1.5 2.49 0.087 0.102
Inductive load, TJ = 125C
tri 25 ns
IC = IC90, VGE = 15 V, L = 100 mH
TO-264 AA (IXFK) Outlin |
Otros transistores... IXGH50N90B2
, IXGH50N90B2D1
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, IXGH56N60B3
, IXGH56N60B3D1
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, 2N6975
, IXGH60N60C3D1
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, IXGH72N60C3
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