IXGK120N120A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK120N120A3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 1200V

Voltaje de saturación colector-emisor (Ucesat): 2.2V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 240A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 325

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

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IXGK120N120A3 - PDF Hoja de especificaciones para ver o descargar...

1.1. ixgx120n120b3_ixgk120n120b3.pdf Size:123K _ixys

Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) ADVANCE TECHNICAL INFORMATION Dim. Millimeter Inches The product presented herein is under development. The Technical Specifications offered are derived Min. Max. Min. Max. from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 "considered reflection" of the anticipat

2.1. ixgk120n60b_ixgx120n60b.pdf Size:601K _ixys

ff 5.5 9.6 mJ higher TJ or increased RG C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 � Inductive load, TJ =125� �C � td(on) � 60 ns e 5.45 BSC .215 BSC tri IC = 100A, VGE = 15 V 60 ns L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 VCE = 0.8 VCES, RG = Roff = 2.4 ? Eon 4.8 mJ Q 5.59 6.20 .220 0.244 Remarks: Switching times td(off) 290 ns R 4.32 4.83 .170 .190 may increase for tfi 250 ns VCE (Clamp) > 0.8 � VCES, TO-264 AA Outline Eoff 8.7 mJ higher

2.2. ixgk120n60b3-ixgx120n60b3.pdf Size:197K _ixys

1.020 1.030 E 19.81 19.96 .780 .786 td(on) 38 ns Inductive load, TJ = 125�C e 5.46 BSC .215 BSC tri 85 ns J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 IC = 100A, VGE = 15V Eon 4.0 mJ L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 td(off) 290 ns VCE = 480V, RG = 2? P 3.17 3.66 .125 .144 tfi 230 ns Q 6.07 6.27 .239 .247 Note 2 Q1 8.38 8.69 .330 .342 Eoff 4.7 mJ R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 RthJC 0.16 �C/W S 6.04 6.30 .238 .248 RthCS 0.15 �C/W T 1.57 1.83 .06

2.3. ixgk120n60c2_ixgx120n60c2.pdf Size:925K _ixys

09 .114 .122 tfi 45 ns c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 Eoff 0.9 1.6 mJ E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC td(on) 18 ns J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 tri 25 ns Inductive load, TJ = 125�C L 20.32 20.83 .800 .820 Eon 1.6 mJ L1 2.29 2.59 .090 .102 IC = 80 A, VGE = 15 V P 3.17 3.66 .125 .144 td(off) 130 ns Q 6.07 6.27 .239 .247 VCE = 400 V, RG = Roff = 1.0 ? Q1 8.38 8.69 .330 .342 tfi 85 ns R 3.81 4.32 .150 .170 Eoff 1.5 mJ R1 1.78 2.29 .

Otros transistores... IXGH72N60C3 , IXGH85N30C3 , IXGH90N60B3 , IXGI48N60C3 , IXGJ40N60C2D1 , IXGJ50N60B , IXGJ50N60C4D1 , IXGK100N170 , IRGS14C40L , IXGK120N120B3 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IXGK320N60A3 , IXGK320N60B3 , IXGK35N120B .