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IXGN100N170
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: IXGN100N170
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc):
Tensión colector-emisor (Uce): 1700V
Voltaje de saturación colector-emisor (Ucesat): 3V
Tensión emisor-compuerta (Ueg):
Corriente del colector DC máxima (Ic): 160A
Temperatura operativa máxima (Tj), °C:
Tiempo de elevación: 0
Capacitancia de salida (Cc), pF:
Empaquetado / Estuche: SOT227
Búsqueda de reemplazo de IXGN100N170
- IGBT IXGN100N170
- PDF Hoja de especificaciones para ver o descargar...
1.1. ixgn100n170.pdf  Size:167K _ixys  |
 | objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following |
5.1. ixgn120n60a3-a3d1.pdf Size:202K _ixys  |
 | G = 1.5?, Note 2
tfi 410 ns
Eoff 10.4 mJ
RthJC 0.21 C/W
RthCK 0.05 C/W
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min Typ. Max.
VF IF = 60A, Note 1 2.1 V
VGE= 0V TJ = 150C 1.4 V
IRM IF = 60A, VGE = 0V, -diF/dt = 100A/?s 8.0 A
trr VR=300V, TJ = 100C 175 ns
RthJC 0.85 C/W
Note: 1. Pulse Test, t ? 300?s; Duty Cycle, d ? 2%.
2. Remarks: Switching Times may Increase for
VCE (Clamp) > 0.8 VCES, Higher TJ or Increased R |
Otros transistores... IXGK64N60B3D1
, IXGK72N60A3H1
, IXGK72N60B3H1
, IXGK75N250
, IXGK82N120A3
, IXGK82N120B3
, IXGL200N60B3
, IXGL75N250
, IXGR50N60B
, IXGN120N60A3
, IXGN120N60A3D1
, IXGN200N60A2
, IXGN200N60B3
, IXGN320N60A3
, IXGN400N30A3
, IXGN400N60A3
, IXGN400N60B3
.
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