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BT15T120ANF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BT15T120ANF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 186

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vcesat): 2.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 16

Capacitancia de salida (Cc), pF: 52

Empaquetado / Estuche: TO3PN

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BT15T120ANF PDF doc:

1.1. bt15t120anf.pdf Size:557K _igbt_a

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

1.2. bt15t120anf.pdf Size:557K _crhj

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

Otros transistores... 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , G20N60B3D , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM .

 


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Introduzca al menos 2 números o letras