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BT15N120ANF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BT15N120ANF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 186

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vcesat): 2.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 38.4

Capacitancia de salida (Cc), pF: 67

Empaquetado / Estuche: TO3PN

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BT15N120ANF PDF doc:

1.1. bt15n120anf.pdf Size:253K _igbt_a

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

1.2. bt15n120anf.pdf Size:254K _crhj

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

5.1. bt15n60a9f.pdf Size:102K _igbt_a

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

5.2. bt15n60a9f.pdf Size:102K _crhj

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

Otros transistores... FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , IXGR40N60C2D1 , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH .

 


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Introduzca al menos 2 números o letras