IXGT32N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT32N60BD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 600V

Voltaje de saturación colector-emisor (Ucesat):

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 80

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXGT32N60BD1 - PDF Hoja de especificaciones para ver o descargar...

3.1. ixgh32n90b2_ixgt32n90b2.pdf Size:202K _ixys

32 .780 .800 L1 4.50 .177 tri 22 ns � Inductive load, TJ = 125� �C � � ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Eon 0.5 mJ IC = IC110 A, VGE = 15 V R 4.32 5.49 .170 .216 Note 1 3.8 mJ S 6.15 BSC 242 BSC VCE = 720 V, RG = Roff = 5 ? td(off) 360 ns tfi 330 ns TO-268 Outline Eoff 5.75 mJ RthJC 0.42 K/W RthCS (TO-247) 0.25 K/W Note 1: Eon measured with a DSEP 30-12A ultrafast diode clamp. Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right

3.2. ixgh32n170_ixgt32n170.pdf Size:577K _ixys

4 tri 38 ns IC = IC90, VGE = 15 V b2 2.87 3.12 .113 .123 td(off) 270 500 ns VCE = 0.6 VCES, RG = Roff = 2.7 ? C .4 .8 .016 .031 D 20.80 21.46 .819 .845 tfi 250 500 ns E 15.75 16.26 .610 .640 Eoff 11 20 mJ e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 td(on) 48 ns � Inductive load, TJ = 125� ?P 3.55 3.65 .140 .144 �C � � tri 42 ns Q 5.89 6.40 0.232 0.252 IC = IC90, VGE = 15 V R 4.32 5.49 .170 .216 Eon 6.0 mJ S 6.15 BSC 242 BSC VCE = 0.6 VCES, RG = Roff = 2

3.3. ixgh32n170a_ixgt32n170a.pdf Size:572K _ixys

te 3 b2 2.87 3.12 .113 .123 tfi 50 100 ns C .4 .8 .016 .031 Eoff 1.5 2.6 mJ D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 td(on) Inductive load, TJ = 125� 48 ns � �C � � L1 4.50 .177 tri IC = IC25, VGE = 15 V 59 ns ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Eon RG = 2.7 ?, VCE = 0.5 VCES 4.0 mJ R 4.32 5.49 .170 .216 td(off) Note 3 300 ns S 6.15 BSC 242 BSC tfi 70 ns Eoff 2.4 mJ TO-268 Outline RthJC 0.35 K/W RthCK (T

3.4. ixgh32n90b2d1_ixgt32n90b2d1.pdf Size:219K _ixys

22 ns Inductive load, TJ = 125�C ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Eon 3.8 mJ IC = IC110 A, VGE = 15 V R 4.32 5.49 .170 .216 td(off) 360 ns S 6.15 BSC 242 BSC VCE = 720 V, RG = Roff = 5 ? tfi 330 ns Eoff 5.75 mJ TO-268 Outline RthJC 0.42 K/W RthCS (TO-247) 0.25 K/W Ultrafast Diode Symbol Conditions Maximum Ratings IF110 TC = 110�C 27 A Symbol Conditions Characteristic Values (TJ = 25�C unless otherwise specified) Min. Typ. Max. VF IF = 30 A; 2.75 V TVJ = 125�

Otros transistores... IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGH48N60A3D1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A .