Todos los IGBT

Introduzca al menos 3 números o letras
 
SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
 
Liste
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..CT20TM-8
CT20VM-8 ..G7N60C
G7N60C3 ..GT60M102
GT60M103 ..HGTD8P50G1S
HGTD8P50G1S9A ..IGA03N120H2
IGA30N60H3 ..IKW40N120T2
IKW40N60H3 ..IRG4PH40UD
IRG4PH40UD2-E ..IRGP4069D
IRGP4072D ..IXDP20N60B
IXDP20N60BD1 ..IXGH16N170A
IXGH16N170AH1 ..IXGH40N30B
IXGH40N30BD1 ..IXGN400N60B3
IXGN50N120C3H1 ..IXGR60N60C2D1
IXGR60N60C3C1 ..IXGX35N120C
IXGX35N120CD1 ..IXSR40N60BD1
IXSR40N60CD1 ..MGW12N120D
MGW14N60ED ..MIXA80WB1200TEH
MIXA80WB1200TEH ..NGB8202N
NGB8204N ..RJP60F4DPM
RJP60F5DPM ..SGW02N120
SGW10N60A ..SKM500GA123D
SKM500GA123S ..STGB18N40LZ
STGB19NC60H ..STGW30NC120HD
STGW30NC60KD ..VWI35-06P1
 
IGBT. Manual. Hoja de especificaciones. Datasheet
 

SGL60N90DG3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGL60N90DG3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 900V

Voltaje de saturación colector-emisor (Ucesat): 2V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 250

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

Búsqueda de reemplazo de SGL60N90DG3 - IGBT

SGL60N90DG3 PDF doc:

1.1. sgl60n90dg3.pdf Size:331K _samsung

SGL60N90DG3
SGL60N90DG3
N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A) 1 * High Input Impedance * Built in Fast Recovery Diode C APPLICATIONS * Home Appliance G - Induction Heater - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 180 Tc = 25 W 72 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature N-CHANNEL IGBT SGL60N90DG3 ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C -

1.2. sgl60n90d.pdf Size:233K _samsung

SGL60N90DG3
SGL60N90DG3
IGBT CO-PAK SGL60N90D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 120 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature IGBT CO-PAK SGL60N90D ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C - E Breakdown Voltage VGE(th) IC =60mA

Otros transistores... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , IRG4PC50W , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .

 

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com