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SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
 
Liste
10N40C1D ..APT15GP90K
APT15GT60BR ..FGA60N60UFD
FGA90N33ATD ..GT15J101
GT15J102 ..HGT1S12N60C3DS9A
HGT1S12N60C3R ..HGTG30N60C3D
HGTG34N100E2 ..IGW40T120
IGW50N60H3 ..IRG4BC30F
IRG4BC30FD ..IRG6S330U
IRG7I313U ..IXA12IF1200TC
IXA17IF1200HJ ..IXGA15N120C
IXGA16N60B2 ..IXGH24N60C4D1
IXGH24N60CD1 ..IXGH56N60B3D1
IXGH60N30C3 ..IXGP20N120A3
IXGP20N120B3 ..IXGT25N160
IXGT25N250 ..IXSH10N120A
IXSH10N120AU1 ..IXXH50N60C3
IXXH50N60C3D1 ..MII200-12A4
MII300-12A4 ..MUBW10-06A7
MUBW10-12A7 ..RJH1CD5DPQ-E0
RJH1CD6DPQ-A0 ..SGH13N60UFD
SGH15N120RUF ..SKM100GB063D
SKM100GB123D ..SKW30N60
SKW30N60HS ..STGD3NB60S
STGD3NB60SD ..TA49014
TA49015 ..VWI35-06P1
 
IGBT. Manual. Hoja de especificaciones. Datasheet
 

SGL60N90DG3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGL60N90DG3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 900V

Voltaje de saturación colector-emisor (Ucesat): 2V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 250

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

Búsqueda de reemplazo de SGL60N90DG3 - IGBT

SGL60N90DG3 PDF doc:

1.1. sgl60n90dg3.pdf Size:331K _samsung

SGL60N90DG3
SGL60N90DG3
N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A) 1 * High Input Impedance * Built in Fast Recovery Diode C APPLICATIONS * Home Appliance G - Induction Heater - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 180 Tc = 25 W 72 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature N-CHANNEL IGBT SGL60N90DG3 ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C -

1.2. sgl60n90d.pdf Size:233K _samsung

SGL60N90DG3
SGL60N90DG3
IGBT CO-PAK SGL60N90D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 120 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature IGBT CO-PAK SGL60N90D ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C - E Breakdown Voltage VGE(th) IC =60mA

Otros transistores... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , IRG4PC50W , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .

 

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