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SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
 
 
Liste
10N40C1D ..APT15GP90B
APT15GP90BDF1 ..APT60GF60JU3
APT60GT60BR ..APTGF90SK60T
APTGF90TA60P ..AUIRGPS4067D1
AUIRGR4045D ..FGW40N120W(40G120W)
FGW40N120WD(40G120WD) ..GT30J122
GT30J124 ..HGT1S3N60C3D
HGT1S3N60C3DS ..HGTP10N50E1D
HGTP10N50F1D ..IHY30N160R2
IKA03N120H2 ..IRG4IBC30FD
IRG4IBC30KD ..IRGB14C40L
IRGB15B60KD ..IXBH40N160
IXBH42N170 ..IXGA8N100
IXGB200N60B3 ..IXGH30N60B4
IXGH30N60BD1 ..IXGK320N60B3
IXGK35N120B ..IXGQ20N120B
IXGQ50N60B4D1 ..IXGT32N90B2D1
IXGT35N120B ..IXSH35N100A
IXSH35N120A ..KGT25N120NDH
KGT25N135NDH ..MIXA10WB1200TML
MIXA10WB1200TML ..MUBW75-12T8
MUBW75-17T8 ..RJH60D5DPQ-A0
RJH60D6DPK ..SGL60N90D
SGL60N90DG3 ..SKM195GB062D
SKM195GB063DN ..SMBL1G150US60
SMBL1G200US120 ..STGF7NB60SL
STGF7NC60HD ..TIG110BF
TIG110GMH ..VWI35-06P1
 
IGBT. Manual. Hoja de especificaciones. Datasheet
 

SGL60N90DG3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGL60N90DG3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 900V

Voltaje de saturación colector-emisor (Ucesat): 2V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 250

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

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SGL60N90DG3 PDF doc:

1.1. sgl60n90dg3.pdf Size:331K _samsung

SGL60N90DG3
SGL60N90DG3
N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A) 1 * High Input Impedance * Built in Fast Recovery Diode C APPLICATIONS * Home Appliance G - Induction Heater - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 180 Tc = 25 W 72 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature N-CHANNEL IGBT SGL60N90DG3 ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C -

1.2. sgl60n90d.pdf Size:233K _samsung

SGL60N90DG3
SGL60N90DG3
IGBT CO-PAK SGL60N90D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 120 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature IGBT CO-PAK SGL60N90D ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C - E Breakdown Voltage VGE(th) IC =60mA

Otros transistores... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , IRG4PC50W , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .

 

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