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SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
 
Liste
10N40C1D ..APT15GP90BDF1
APT15GP90K ..APT60GT60BR
APT60GT60BR ..APTGF90TA60P
APTGF90TDU60P ..AUIRGR4045D
AUIRGS14C40L ..G12N50E1D
G12N60C3D ..GT50L101
GT50M101 ..HGTD3N60B3
HGTD3N60B3S ..HGTP3N60B3
HGTP3N60B3D ..IKU10N60R
IKU15N60R ..IRG4PC50SD
IRG4PC50U ..IRGP20B60PD
IRGP30B120KD-E ..IXBX55N300
IXBX64N250 ..IXGH12N100
IXGH12N100A ..IXGH36N60A3D4
IXGH36N60B3 ..IXGL75N250
IXGM17N100 ..IXGR48N60B3D1
IXGR48N60C3D1 ..IXGV25N250S
IXGX100N170 ..IXSN52N60AU1
IXSN55N120A ..MGP15N40CL
MGP15N43CL ..MIXA40W1200TMH
MIXA40W1200TML ..MWI50-12A7T
MWI50-12E6K ..RJH60T4DPQ-A0
RJP30E2DPP-M0 ..SGR5N60RUF
SGR6N60UF ..SKM300GB174D
SKM400GA062D ..SNG201017
SNG201025 ..STGP8NC60KD
STGPL6NC60D ..VWI35-06P1
 
IGBT. Manual. Hoja de especificaciones. Datasheet
 

SGL60N90DG3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGL60N90DG3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 900V

Voltaje de saturación colector-emisor (Ucesat): 2V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 250

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

Búsqueda de reemplazo de SGL60N90DG3 - IGBT

SGL60N90DG3 PDF doc:

1.1. sgl60n90dg3.pdf Size:331K _samsung

SGL60N90DG3
SGL60N90DG3
N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A) 1 * High Input Impedance * Built in Fast Recovery Diode C APPLICATIONS * Home Appliance G - Induction Heater - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 180 Tc = 25 W 72 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature N-CHANNEL IGBT SGL60N90DG3 ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C -

1.2. sgl60n90d.pdf Size:233K _samsung

SGL60N90DG3
SGL60N90DG3
IGBT CO-PAK SGL60N90D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 120 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature IGBT CO-PAK SGL60N90D ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C - E Breakdown Voltage VGE(th) IC =60mA

Otros transistores... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , IRG4PC50W , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .

 

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