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SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
  SGL60N90DG3
 
SGL60N90DG3
  SGL60N90DG3
 
 
Liste
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30KD
IRG4PH40K ..IRGP4066D-E
IRGP4068D ..IXDN50N120AU1
IXDN55N120 ..IXGH15N120BD1
IXGH15N120C ..IXGH40N120C3
IXGH40N120C3D1 ..IXGN200N60B3
IXGN320N60A3 ..IXGR60N60B2
IXGR60N60B2D1 ..IXGX32N170AH1
IXGX32N170H1 ..IXSP24N60B
IXSQ10N60B2D1 ..MGS05N60D
MGS13002D ..MIXA80W1200TED
MIXA80W1200TED ..MWI80-12T6K
NGB15N41CLT4 ..RJP60D0DPM
RJP60D0DPP-M0 ..SGS6N60UFD
SGU15N40L ..SKM400GB124D
SKM40GD123D ..STGB10NC60HD
STGB10NC60K ..STGW25H120DF
STGW30N120KD ..VWI35-06P1
 
IGBT. Manual. Hoja de especificaciones. Datasheet
 

SGL60N90DG3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGL60N90DG3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Uce): 900V

Voltaje de saturación colector-emisor (Ucesat): 2V

Tensión emisor-compuerta (Ueg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 250

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

Búsqueda de reemplazo de SGL60N90DG3 - IGBT

SGL60N90DG3 PDF doc:

1.1. sgl60n90dg3.pdf Size:331K _samsung

SGL60N90DG3
SGL60N90DG3
N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A) 1 * High Input Impedance * Built in Fast Recovery Diode C APPLICATIONS * Home Appliance G - Induction Heater - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 180 Tc = 25 W 72 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature N-CHANNEL IGBT SGL60N90DG3 ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C -

1.2. sgl60n90d.pdf Size:233K _samsung

SGL60N90DG3
SGL60N90DG3
IGBT CO-PAK SGL60N90D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 60 A Tc = 100 42 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 120 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature IGBT CO-PAK SGL60N90D ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES VGE = 0V , IC = 1 900 - - V C - E Breakdown Voltage VGE(th) IC =60mA

Otros transistores... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , IRG4PC50W , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .

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