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STP80NF55L-06
  STP80NF55L-06
  STP80NF55L-06
 
STP80NF55L-06
  STP80NF55L-06
  STP80NF55L-06
 
STP80NF55L-06
  STP80NF55L-06
 
 
Liste
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

STP80NF55L-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP80NF55L-06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300

Tensión drenaje-fuente (Uds): 55

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 80

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.0065

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET STP80NF55L-06

STP80NF55L-06 PDF doc:

1.1. stp80nf55l-08_stb80nf55l-08_stb80nf55l-08-1.pdf Size:195K _st

STP80NF55L-06
STP80NF55L-06
STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature INTERNAL SCHEMATIC DIAGRAM Size strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS HIGH CURRENT SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS =20k?) 55 V VGS Gate- source Voltage 16 V ID (1) Drain Current

1.2. stb80nf55-08t4_stp80nf55-08_stw80nf55-08.pdf Size:362K _st

STP80NF55L-06
STP80NF55L-06
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 ?, 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V < 0.008 ? 80 A 2 3 1 2 STP80NF55-08 55 V < 0.008 ? 80 A 1 TO-247 TO-220 STW80NF55-08 55 V < 0.008 ? 80 A Standard threshold drive 3 Application 1 D?PAK Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order codes Marking Package Packaging STB80NF55-08T4 B80NF55-08 D?PAK Tape and reel STP80NF55-08 P80NF55-08 TO-220 Tube STW80NF55-08 W80NF55-08 TO-247 Tube April 2009 Doc ID 14511 Rev 2 1/15 www.st.com 15

1.3. stp80nf55l-08.pdf Size:339K _st

STP80NF55L-06
STP80NF55L-06
STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature INTERNAL SCHEMATIC DIAGRAM Size strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RG

1.4. stp80nf55-07.pdf Size:36K _st

STP80NF55L-06
STP80NF55L-06
STP80NF55-07 ? N - CHANNEL 55V - 0.0055? - 80A - TO-220 STripFET? POWER MOSFET TARGET DATA TYPE VDSS RDS(on) ID STP80NF55-07 55 V <0.07 ? 80 A TYPICAL R = 0.0055 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 DESCRIPTION 2 This Power MOSFET is the second generation of 1 STMicroelectronics unique Single Feature Size strip-based process. The resulting ? TO-220 transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR 55 V Drain- gate Voltage (RGS = 20 k?) VGS Gate-source Voltage 20 V o I Drain Current (continuous) at

1.5. stp80nf55.pdf Size:353K _st

STP80NF55L-06
STP80NF55L-06
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 ? - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V <0.008 ? 80 A STP80NF55-08 55 V <0.008 ? 80 A TYPICAL RDS(on) = 0.0065? 3 LOW THRESHOLD DRIVE 3 1 2 1 DESCRIPTION I2PAK D2PAK TO-262 This Power MOSFET is the latest development of TO-263 STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- 3 2 resistance, rugged avalanche characteristics and 1 less critical alignment steps therefore a TO-220 remarkable manufacturing reproducibility. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 20 V ID() Drain C

1.6. stb80nf55-06_stb80nf55-06-1_stp80nf55-06_stp80nf55-06fp.pdf Size:447K _st

STP80NF55L-06
STP80NF55L-06
STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005? - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V <0.0065? 80A (1) 3 3 2 STB80NF55-06-1 55V <0.0065? 80A(1) 2 1 1 STP80NF55-06 55V <0.0065? 80A (1) TO-220 TO-220FP STP80NF55-06FP 55V <0.0065? 60A (1) 1. Limited by package Exceptional dv/dt capability 3 1 3 2 1 100% avalanche tested D?PAK I?PAK Application oriented characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STB80NF55-06T4 B80N

1.7. stb80nf55l-06_stp80nf55l-06.pdf Size:399K _st

STP80NF55L-06
STP80NF55L-06
STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX T4) TO-220 TO-263 (Suffix T4) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value U

Otros transistores... STP80N20M5 , STP80N70F4 , STP80NF06 , STP80NF10 , STP80NF10FP , STP80NF12 , STP80NF55-06 , STP80NF55-08 , BUZ11 , STP80NS04ZB , STP80PF55 , STP85N15F4 , STP85N3LH5 , STP85NF55 , STP85NF55L , STP8N65M5 , STP8NK100Z .

 

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