SSM3K123TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K123TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 20V

Tensión compuerta-fuente (Ugs): 10

Corriente continua de drenaje (Id): 4.2

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.028

Empaquetado / Estuche: UFM

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SSM3K123TU - PDF Hoja de especificaciones para ver o descargar.

1.1. ssm3k123tu_071101.pdf Size:165K _toshiba

arge Qg ? 13.6 ? VDS = 10 V, IDS= 4.2 A Gate-Source Charge Qgs ? 9.8 ? nC VGS = 4 V Gate-Drain Charge Qgd ? 3.8 ? Turn-on time ton VDD = 10 V, ID = 1.0 A, ? 17 ? Switching time ns VGS = 0~2.5 V, RG = 4.7 ? Turn-off time toff ? 30 ? Drain-Source forward voltage VDSF ID = -4.2 A, VGS = 0 V (Note 3) ? - 0.8 - 1.2 V Note 3: Pulse test 1 2007-11-01 -0.05 +0.1 0.3 0.65�0.05 2.0�0.1 0.166�0.05 0.7�0.05 SSM3K123TU Switching Time Test Circuit (a) Test Circuit (b) VIN

3.1. ssm3k122tu_071101.pdf Size:145K _toshiba

tal Gate Charge Qg ? 3.4 ? VDS = 10 V, ID= 2.0 A Gate-Source Charge Qgs ? 2.3 ? nC VGS = 4 V Gate-Drain Charge Qgd ? 1.1 ? Turn-on time ton VDD = 10 V, ID = 0.5 A, ? 8.0 ? Switching time ns VGS = 0 to 2.5 V, RG = 4.7 ? Turn-off time toff ? 9.0 ? Drain-Source forward voltage VDSF ID = -2.0 A, VGS = 0 V (Note 3) ? -0.85 -1.2 V Note 3: Pulse test 1 2007-11-01 -0.05 +0.1 0.3 0.65�0.05 2.0�0.1 0.166�0.05 0.7�0.05 SSM3K122TU Switching Time Test Circuit (a) Test Circu

3.2. ssm3k124tu_071101.pdf Size:153K _toshiba

�0.05 2.0�0.1 0.166�0.05 0.7�0.05 SSM3K124TU Switching Time Test Circuit (a) Test Circuit (b) VIN 4 V 90% OUT 4 V IN 10% 0 V 0 VDD (c) VOUT 10 ?s 10% VDD 90% VDD = 10 V VDS (ON) RG = 10 ? tr tf < 1% D.U. = ton toff VIN: tr, tf < 5 ns Common Source Ta = 25�C Marking Equivalent Circuit (top view) 3 3 KKE 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for

3.3. ssm3k127tu_071113.pdf Size:191K _toshiba

ce Charge Qgs ? 0.9 ? nC VGS = 4 V Gate-Drain Charge Qgd ? 0.6 ? Turn-on time ton VDD = 15 V, ID = 1.0 A, ? 9.2 ? Switching time ns VGS = 0 to 2.5 V, RG = 4.7 ? Turn-off time toff ? 6.4 ? Drain-Source forward voltage VDSF ID = -2.0 A, VGS = 0 V (Note3) ? -0.82 -1.2 V Note 3: Pulse test 2 2007-11-13 SSM3K127TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V 90% VDD = 15 V 2.5 V OUT RG = 4.7 ? 10% IN < 1% 0 V D.U. = 0 VIN: tr, tf < 5 ns

3.4. ssm3k128tu_070606.pdf Size:197K _toshiba

h and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be mad

3.5. ssm3k12t_071101.pdf Size:219K _toshiba

eshold voltage Vth VDS = 5 V, ID = 0.1 mA 1.1 ? 1.8 V Forward transfer admittance |Yfs| VDS = 5 V, ID = 1.5 A (Note 3) 1.8 3.2 ? S ID = 1.5 A, VGS = 10 V (Note 3) ? 78 95 Drain-Source ON resistance RDS (ON) ID = 1.5 A, VGS = 4.5 V (Note 3) ? 117 145 m? ID = 1.5 A, VGS = 4.0 V (Note 3) ? 135 175 Total gate charge Qg VDD = 24 V, ID = 3 A, VGS = 4 V ? 2.6 ? nC Input capacitance Ciss VDS = 15 V, VGS = 0, f = 1 MHz ? 120 ? pF Reverse transfer capacitance Crss VDS = 15 V, VGS = 0, f = 1 MHz ? 2

3.6. ssm3k124tu.pdf Size:314K _toshiba

res a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. The VGS recommended voltage for turning on this product is 4 V or higher. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects t

3.7. ssm3k121tu.pdf Size:165K _toshiba

g ? 5.9 ? VDS = 10 V, IDS= 3.2 A Gate-Source Charge Qgs ? 4.1 ? nC VGS = 4 V Gate-Drain Charge Qgd ? 1.8 ? Turn-on time ton VDD = 10 V, ID = 2 A, ? 14 ? Switching time ns VGS = 0~2.5 V, RG = 4.7 ? Turn-off time toff ? 15 ? Drain-Source forward voltage VDSF ID = -3.2 A, VGS = 0 V (Note 3) ? -0.85 -1.2 V Note 3: Pulse test 1 2007-11-01 -0.05 +0.1 0.3 0.65�0.05 2.0�0.1 0.166�0.05 0.7�0.05 SSM3K121TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V 90%

3.8. ssm3k126tu_071101.pdf Size:163K _toshiba

rain-Source forward voltage VDSF ID = -3.9 A, VGS = 0 V (Note 3) ? -0.8 -1.2 V Note 3: Pulse test 1 2007-11-01 -0.05 +0.1 0.3 0.65�0.05 2.0�0.1 0.166�0.05 0.7�0.05 SSM3K126TU Switching Time Test Circuit (a) Test Circuit (b) VIN 4.0 V 90% OUT 4.0 V IN 10% 0 V 0 (c) VOUT VDD 10% 10 ?s VDD 90% VDS (ON) VDD = 15 V tr tf RG = 10 ? < 1% D.U. = ton toff VIN: tr, tf < 5 ns Common Source Ta = 25�C Marking Equivalent Circuit (top view) 3 3 KKG

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