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2SK3561
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2SK3561
  2SK3561
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2SK3561
  2SK3561
 
 
Liste
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK652R6-40C
BUK653R2-55C ..BUK9212-55B
BUK9213-30A ..BUZ46
BUZ50A ..CED16N10L
CED20P06 ..CEP02N6A
CEP02N6G ..CPH3350
CPH3351 ..DMP2104LP
DMP2104V ..FCPF7N60NT
FCPF7N60NT ..FDD18N20LZ
FDD18N20LZ ..FDMA291P
FDMA3023PZ ..FDMS86105
FDMS86105 ..FDPF5N60NZ
FDPF5N60NZ ..FDS8958B
FDS8978 ..FQB22P10TM_F085
FQB25N33TM_F085 ..FQP9N30
FQP9N90C ..FRL9230R
FRM130D ..GWM160-0055X1-SL
GWM160-0055X1-SL ..HAT1046R
HAT1047R ..HEPF2004
HEPF2007A ..IPA057N06N3G
IPA057N08N3G ..IPB80N04S2L-03
IPB80N04S3-03 ..IPI100N10S3-05
IPI100P03P3L-04 ..IPP60R199CP
IPP60R250CP ..IRF1010NS
IRF1010Z ..IRF610A
IRF610S ..IRF7326D2
IRF7328 ..IRF840I
IRF840S ..IRFBL10N60A
IRFBL12N50A ..IRFL1006
IRFL110 ..IRFPF50
IRFPG30 ..IRFS510A
IRFS520 ..IRFU2905Z
IRFU310 ..IRL3705Z
IRL3705ZL ..IRLR8726
IRLR8729 ..IXFE44N60
IXFE48N50Q ..IXFK230N20T
IXFK240N15T2 ..IXFN48N55
IXFN48N60P ..IXFT70N15
IXFT70N20Q3 ..IXTA152N085T7
IXTA15P15T ..IXTH220N055T
IXTH220N075T ..IXTN90N25L2
IXTN90P20P ..IXTQ40N50L2
IXTQ40N50Q ..IXTZ35N25MA
IXTZ35N25MB ..KMA2D4P20SA
KMA2D7DP20X ..KTK5132E
KTK5132S ..NDB4050L
NDB4060 ..NTD4815N
NTD4855N ..NTTFS5826NL
NTUD3127C ..PHX6ND50E
PHX7N60E ..PSMN2R6-40YS
PSMN2R7-30PL ..RFD7N10LE
RFD7N10LESM ..RJK1051DPB
RJK1052DPB ..RSD160P05
RSD175N10 ..SDF360JED
SDF3N90 ..SGSP319
SGSP321 ..SML1004RCN
SML1004RGN ..SMN03T80F
SMN03T80IS ..SSD12P10
SSD15N10 ..SSM3J05FU
SSM3J09FU ..SSM6L40TU
SSM6N04FU ..STB14NK60Z
STB14NM50N ..STD35NF3LL
STD38NH02L ..STF34NM60ND
STF35N65M5 ..STL60N32N3LL
STL60N3LLH5 ..STP36NF06L
STP38N06 ..STP9NK65ZFP
STP9NK70Z ..STW45NM60
STW45NM60D ..TK35S04K3L
TK3A60DA ..TPC8108
TPC8109 ..TPCP8206
TPCP8301 ..VN10LF
VN10LP ..ZXMN6A09K
ZXMN6A11DN8 ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

2SK3561 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3561

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 8

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm:

Empaquetado / Estuche: TO220SIS

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2SK3561 PDF doc:

1.1. 2sk3561.pdf Size:227K _toshiba

2SK3561
2SK3561
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 Drain current A Pulse (t = 1 ms) IDP 32 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 312 mJ (Note 2) Avalanche current IAR 8 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Chara

4.1. 2sk3565.pdf Size:341K _toshiba

2SK3561
2SK3561
TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 900 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) 2. Drain PD 45 W 3. Source Single pulse avalanche energy EAS 595 mJ (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C

4.2. 2sk3567.pdf Size:223K _toshiba

2SK3561
2SK3561
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 14 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 35 W Single pulse avalanche energy EAS 201 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using contin

4.3. 2sk3568.pdf Size:245K _toshiba

2SK3561
2SK3561
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 12 Drain current A Pulse (t = 1 ms) IDP 48 1: Gate (Note 1) 2: Drain Drain power dissipation (Tc = 25C) 3: Source PD 40 W JEDEC ? Single pulse avalanche energy EAS 364 mJ (Note 2) JEITA SC-67 Avalanche current IAR 12 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight : 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously u

4.4. 2sk3569.pdf Size:236K _toshiba

2SK3561
2SK3561
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 40 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 363 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continu

4.5. 2sk3563.pdf Size:348K _toshiba

2SK3561
2SK3561
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 500 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) PD 35 W 2. Drain Single pulse avalanche energy EAS 180 mJ 3. Source (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150

4.6. 2sk3566_100506.pdf Size:214K _toshiba

2SK3561
2SK3561
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 2.5 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 7.5 (Note 1) Drain power dissipation (Tc = 25C) JEDEC ? PD 40 W Single pulse avalanche energy JEITA SC-67 EAS 216 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 2.5 A Weight : 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Note: U

4.7. 2sk3562.pdf Size:232K _toshiba

2SK3561
2SK3561
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 Drain current A Pulse (t = 1 ms) IDP 24 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 345 mJ (Note 2) Avalanche current IAR 6 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Charac

4.8. 2sk3564.pdf Size:248K _toshiba

2SK3561
2SK3561
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 9 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy EAS 408 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuous

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3561
2SK3561
Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender voltage VGSS 30 V ID 30 A Drain current 1: Gate Peak drain current IDP 120 A 2: Drain PD 50 W 3: Source Power TO-220C-G1 Package dissipation Ta = 25C3 Channel temperature Tch 150 C Internal Connection Storage temperature Tstg -55 to +150 C D G S Electrical Characteristics TC = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 V Diode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V Gate threshold voltage Vth VDS = 25 V, ID = 1 mA 2 4 V Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 100 A Gate-sou

Otros transistores... 2SK3443 , 2SK3444 , 2SK3445 , 2SK3462 , 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , IRF540 , 2SK3562 , 2SK3563 , 2SK3567 , 2SK3568 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 .

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