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2SK3561
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2SK3561
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2SK3561
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Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF190N60E
FCPF20N60 ..FDD10N20LZ
FDD120AN15A0 ..FDMA520PZ
FDMA530PZ ..FDMS8025S
FDMS8026S ..FDPF12N50UT
FDPF12N60NZ ..FDS9936A
FDS9945 ..FQB7P20TM_F085
FQB8N60C ..FQPF9N25C
FQPF9N50C ..FRX130H1
FRX130H2 ..H5N3005LD
H5N3005LS ..HAT2140H
HAT2141H ..HUF75623P3
HUF75631P3 ..IPB052N04NG
IPB054N06N3G ..IPD30N08S2-22
IPD30N08S2L-21 ..IPL60R385CP
IPP015N04NG ..IPW50R140CP
IPW50R199CP ..IRF3315S
IRF340 ..IRF6626
IRF6628 ..IRF7504
IRF7506 ..IRF9642
IRF9643 ..IRFH5303
IRFH5304 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHS2242
IRLHS6242 ..IRLWZ44A
IRLZ10 ..IXFH24N50Q
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
IXTH67N08MA ..IXTP2N80
IXTP2N80P ..IXTT50P10
IXTT52N30P ..KF3N50DZ
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTBA5C10AQ8
MTBA5C10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4906N
NTD4909N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
PSMN3R5-30LL ..RFD16N05LSM
RFD16N05SM ..RJK0853DPB
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF130JDA-D
SDF130JDA-S ..SFT1423
SFT1431 ..SMG2391P
SMG2398N ..SML50B26
SML50B30 ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
SSM3K104TU ..SSP4N80A
SSP4N80AS ..STB438A
STB438S ..STD5N20
STD5N20-1 ..STF8234
STF8236 ..STL80N75F6
STL85N6F3 ..STP200NF04L
STP20N06 ..STP652F
STP656F ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A60U
TK12A65D ..TPC6130
TPC6201 ..TPCA8A09-H
TPCA8A10-H ..UT3418
UT3419 ..ZVN2110A
ZVN2110G ..ZXMS6005SG
ZXMS6006DG ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

2SK3561 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3561

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 8

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm:

Empaquetado / Estuche: TO220SIS

Búsqueda de reemplazo de MOSFET 2SK3561

2SK3561 PDF doc:

1.1. 2sk3561.pdf Size:227K _toshiba

2SK3561
2SK3561
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 Drain current A Pulse (t = 1 ms) IDP 32 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 312 mJ (Note 2) Avalanche current IAR 8 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Chara

4.1. 2sk3569.pdf Size:236K _toshiba

2SK3561
2SK3561
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 40 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 363 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continu

4.2. 2sk3568.pdf Size:245K _toshiba

2SK3561
2SK3561
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 12 Drain current A Pulse (t = 1 ms) IDP 48 1: Gate (Note 1) 2: Drain Drain power dissipation (Tc = 25C) 3: Source PD 40 W JEDEC ? Single pulse avalanche energy EAS 364 mJ (Note 2) JEITA SC-67 Avalanche current IAR 12 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight : 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously u

4.3. 2sk3566_100506.pdf Size:214K _toshiba

2SK3561
2SK3561
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 2.5 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 7.5 (Note 1) Drain power dissipation (Tc = 25C) JEDEC ? PD 40 W Single pulse avalanche energy JEITA SC-67 EAS 216 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 2.5 A Weight : 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Note: U

4.4. 2sk3567.pdf Size:223K _toshiba

2SK3561
2SK3561
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 14 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 35 W Single pulse avalanche energy EAS 201 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using contin

4.5. 2sk3562.pdf Size:232K _toshiba

2SK3561
2SK3561
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 Drain current A Pulse (t = 1 ms) IDP 24 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 345 mJ (Note 2) Avalanche current IAR 6 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Charac

4.6. 2sk3565.pdf Size:341K _toshiba

2SK3561
2SK3561
TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 900 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) 2. Drain PD 45 W 3. Source Single pulse avalanche energy EAS 595 mJ (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C

4.7. 2sk3564.pdf Size:248K _toshiba

2SK3561
2SK3561
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 9 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy EAS 408 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuous

4.8. 2sk3563.pdf Size:348K _toshiba

2SK3561
2SK3561
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 500 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) PD 35 W 2. Drain Single pulse avalanche energy EAS 180 mJ 3. Source (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3561
2SK3561
Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender voltage VGSS 30 V ID 30 A Drain current 1: Gate Peak drain current IDP 120 A 2: Drain PD 50 W 3: Source Power TO-220C-G1 Package dissipation Ta = 25C3 Channel temperature Tch 150 C Internal Connection Storage temperature Tstg -55 to +150 C D G S Electrical Characteristics TC = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 V Diode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V Gate threshold voltage Vth VDS = 25 V, ID = 1 mA 2 4 V Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 100 A Gate-sou

Otros transistores... 2SK3443 , 2SK3444 , 2SK3445 , 2SK3462 , 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , IRF540 , 2SK3562 , 2SK3563 , 2SK3567 , 2SK3568 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 .

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