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BUZ90
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BUZ90
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10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7805Q
AUIRF9540N ..BF1203
BF1204 ..BLF6G10LS-200RN
BLF6G10LS-260PRN ..BSC042NE7NS3G
BSC046N02KSG ..BSS84AKM
BSS84AKS ..BUK7109-75ATE
BUK714R1-40BT ..BUK9516-75B
BUK9518-30 ..BUZ900X4S
BUZ901 ..CED830G
CED83A3 ..CEP16N10L
CEP20A03 ..DMC2004VK
DMC2020USD ..DMP57D5UV
DMP58D0SV ..FDB050AN06A0
FDB060AN08A0 ..FDD5202P
FDD5353 ..FDMC5614P
FDMC6296 ..FDN361BN
FDN372S ..FDS3572
FDS3580 ..FDT86244
FDT86246 ..FQD10N20L
FQD11P06 ..FQPF33N10
FQPF33N10L ..FRM9240H
FRM9240R ..H07N65F
H10N60E ..HAT2020R
HAT2022R ..HR3N200
HRF3205 ..IPA60R600E6
IPA60R750E6 ..IPD040N03LG
IPD042P03L3G ..IPI60R125CP
IPI60R165CP ..IPP80N04S3-06
IPP80N04S3-H4 ..IRF142
IRF143 ..IRF630NS
IRF630S ..IRF740S
IRF741 ..IRF9395M
IRF9410 ..IRFF024
IRFF110 ..IRFN440
IRFN450 ..IRFR220
IRFR220A ..IRFS650A
IRFS654A ..IRFU9024
IRFU9024N ..IRL620A
IRL620S ..IRLU230A
IRLU2703 ..IXFH14N100Q2
IXFH14N60P ..IXFK44N80Q3
IXFK48N50 ..IXFP22N60P3
IXFP230N075T2 ..IXFV22N50PS
IXFV22N60P ..IXTA240N055T7
IXTA24P085T ..IXTH35N25MA
IXTH35N25MB ..IXTP160N075T
IXTP160N10T ..IXTR40P50P
IXTR48P20P ..JANSR2N7396
JANSR2N7398 ..KMB4D5DN60QA
KMB4D5NP55Q ..KU086N10P
KU2303D ..MTB25A04Q8
MTB25N04J3 ..MTN2306ZN3
MTN2310M3 ..MTP452L3
MTP452M3 ..NTB45N06
NTB45N06L ..NTP5863N
NTP5864N ..PHP6N10E
PHP6N50E ..PSMN069-100YS
PSMN070-200B ..RF1K49223
RF1K49224 ..RJK0397DPA
RJK03A4DPA ..RQJ0202VGDQA
RQJ0203WGDQA ..SDF120JAA-D
SDF120JAA-S ..SFS9Z34
SFT1341 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPI11N60C3
SPI11N60CFD ..SSG4920N
SSG4930N ..SSM3K329R
SSM3K333R ..SSQ6N60
SSR1N50 ..STD10N10LT4
STD10N10T4 ..STD95N4LF3
STD9NM50N ..STI200N6F3
STI21N65M5 ..STP18N10FI
STP18N55M5 ..STP60NF03L
STP60NF06 ..STV36N06
STV3NA80 ..TJ8S06M3L
TK07H90A ..TPC6003
TPC6004 ..TPCA8081
TPCA8082 ..UT2312
UT2316 ..WTL2622
WTM2310A ..ZXMP6A13F
ZXMP6A13G ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BUZ90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75

Tensión drenaje-fuente (Uds): 600

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 4.5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 1050

Resistencia drenaje-fuente RDS (on), Ohm: 1.6

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.3. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm NCHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) HIGH VOLTAGE (220V & 250V) 1.01 (0.040) HIGH ENERGY RATING 1.40 (0.055) ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC COMPLIMENTARY PCHANNEL TO-247 BUZ907P & BUZ908P Pin 1 Gate Pin 2 Source Pin 3 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ902P BUZ903P VDSX Drain Source Voltage 220V 250V VGSS Gate Source Voltage 14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj M

1.4. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 NCHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION DIODE 5.45 5.45 PCHANNEL ALSO AVAILABLE AS TO3PBL BUZ905DP & BUZ906DP Pin 1 Gate Pin 2 Source Pin 3 Drain DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain Source Voltage 160V 200V VGSS Gate Source Voltage 14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25C 250W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 0.5C/W Prelim. 2/95

1.5. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm PCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY NCHANNEL TO3 BUZ902 & BUZ903 Pin 1 Gate Pin 2 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ907 BUZ908 VDSX Drain Source Voltage -220V -250V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 1C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 1.1 O 20 Max. 30.2 0.15 O 1

Otros transistores... BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

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