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BUZ90
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BUZ90
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BUZ90
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Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NDS8936
NDS8961 ..NTMFS4854NS
NTMFS4897N ..PHN203
PHN210T ..PSMN012-60YS
PSMN012-80PS ..RCD100N20
RCJ330N25 ..RJK0304DPB
RJK0304DPC ..RJL6020DPK
RJL6032DPP-M0 ..SCH1331
SCH1332 ..SFN423P
SFP2955 ..SMG2305L
SMG2305P ..SML40B37
SML40C15N ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
SSM3K104TU ..SSP4N80A
SSP4N80AS ..STB5N62K3
STB5NK50Z ..STD65N3LLH5
STD65N55F3 ..STH4N90FI
STH55N10 ..STP12PF06
STP130NH02L ..STP55N06LFI
STP55NF06 ..STT6405
STT6602 ..Si4832DY
Si4833DY ..TK6B60D
TK6P53D ..TPCA8015-H
TPCA8016-H ..UF8010
UF830 ..VMO1600-02P
VMO550-01F ..ZXMN4A06G
ZXMN4A06K ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BUZ90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75

Tensión drenaje-fuente (Uds): 600

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 4.5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 1050

Resistencia drenaje-fuente RDS (on), Ohm: 1.6

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.3. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm NCHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) HIGH VOLTAGE (220V & 250V) 1.01 (0.040) HIGH ENERGY RATING 1.40 (0.055) ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC COMPLIMENTARY PCHANNEL TO-247 BUZ907P & BUZ908P Pin 1 Gate Pin 2 Source Pin 3 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ902P BUZ903P VDSX Drain Source Voltage 220V 250V VGSS Gate Source Voltage 14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj M

1.4. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 NCHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION DIODE 5.45 5.45 PCHANNEL ALSO AVAILABLE AS TO3PBL BUZ905DP & BUZ906DP Pin 1 Gate Pin 2 Source Pin 3 Drain DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain Source Voltage 160V 200V VGSS Gate Source Voltage 14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25C 250W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 0.5C/W Prelim. 2/95

1.5. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm PCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY NCHANNEL TO3 BUZ902 & BUZ903 Pin 1 Gate Pin 2 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ907 BUZ908 VDSX Drain Source Voltage -220V -250V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 1C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 1.1 O 20 Max. 30.2 0.15 O 1

Otros transistores... BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

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