Todos los MOSFET

Introduzca al menos 3 números o letras
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
 
 
Liste
03N06 ..2N5198
2N5199 ..2N6798SM
2N6799 ..2N7272R1
2N7272R2 ..2SJ378
2SJ380 ..2SK1094
2SK1095 ..2SK1460LS
2SK1461 ..2SK1891
2SK1895 ..2SK2341
2SK2342 ..2SK2709
2SK2710 ..2SK3070
2SK3070L ..2SK3472
2SK3473 ..2SK4019
2SK4020 ..2SK904
2SK905 ..3SK181-5
3SK181-6 ..7N60A
7N60F ..AO4854
AO4862 ..AOD421
AOD422 ..AON6404
AON6404A ..AOT2608L
AOT260L ..AOWF4S60
AOWF7S65 ..AP20N15GH-HF
AP20N15GI-HF ..AP40T03GP
AP40T03GS ..AP60T03GP
AP60T03GS ..AP9466GS
AP9467AGH-HF ..AP9971GJ
AP9971GM-HF ..APM9428K
APM9430 ..APT20M42HVR
APT20M42HVR ..APT8018L2VFR
APT8018L2VR ..AUIRFR3504Z
AUIRFR3607 ..BF904AWR
BF904R ..BLF7G15LS-200
BLF7G15LS-300P ..BSB053N03LPG
BSC010NE2LS ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3350
CPH3351 ..DMN66D0LW
DMP2004DMK ..FCP11N60N
FCP130N60 ..FDC6305N
FDC6306P ..FDH038AN08A1
FDH047AN08A0 ..FDMS3664S
FDMS3668S ..FDP5N50NZ
FDP5N60NZ ..FDS86140
FDS86141 ..FQA62N25C
FQA65N20 ..FQPF13N06L
FQPF13N50C ..FRM9140R
FRM9230D ..FTD04N65C
FTD06N70C ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB05CN10NG
IPB065N03LG ..IPD33CN10NG
IPD350N06LG ..IPP024N06N3G
IPP028N08N3G ..IPW50R350CP
IPW50R399CP ..IRF3415S
IRF350 ..IRF6633
IRF6633A ..IRF7507(P)
IRF7509 ..IRF9952
IRF9952Q ..IRFH5304
IRFH5306 ..IRFP241
IRFP242 ..IRFR540Z
IRFR5410 ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..LS4119
MBNP2026G6 ..MTB25P06FP
MTB2P50E ..MTN2310M3
MTN2310N3 ..MTP452M3
MTP4835AQ8 ..NTB5426N
NTB5605P ..NTP6412AN
NTP6413AN ..P0903BV
P0903BVA ..P5010AT
P5010AV ..PHB50N03LT
PHB50N06LT ..PMGD280UN
PMGD290XN ..PSMN5R8-40YS
PSMN5R9-30YL ..RFD14N06L
RFD14N06LSM ..RJK0652DPB
RJK0653DPB ..RQM2201DNS
RRF015P03 ..SDF120JAB-S
SDF120JAB-U ..SFS9610
SFS9614 ..SMG2305PE
SMG2306A ..SML40H22
SML40H28 ..SPA07N60CFD
SPA07N65C3 ..SSD70N04-06D
SSD9435 ..SSF5508A
SSF5508U ..SSG6680
SSG9435 ..SSM3K44MFV
SSM3K48FU ..SSPS7321P
SSPS7330N ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT2605
STT3402N ..STV60N06
STV6NA60 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3443
UT3458 ..ZVN0540A
ZVN0545A ..ZXMS6004DG
ZXMS6004DT8 ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BUZ90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75

Tensión drenaje-fuente (Uds): 600

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 4.5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 1050

Resistencia drenaje-fuente RDS (on), Ohm: 1.6

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.3. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 NCHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION DIODE 5.45 5.45 PCHANNEL ALSO AVAILABLE AS TO3PBL BUZ905DP & BUZ906DP Pin 1 Gate Pin 2 Source Pin 3 Drain DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain Source Voltage 160V 200V VGSS Gate Source Voltage 14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25C 250W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 0.5C/W Prelim. 2/95

1.4. buz900d_buz901d.pdf Size:44K _magnatec

BUZ90
BUZ90
BUZ900D MAGNA BUZ901D TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905D & BUZ906D • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900D BUZ901D VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal R

1.5. buz900p_buz901p.pdf Size:42K _magnatec

BUZ90
BUZ90
BUZ900P MAGNA BUZ901P TEC MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • N–CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • SEMEFAB DESIGNED AND DIFFUSED 1.01 (0.040) • HIGH VOLTAGE (160V & 200V) 1.40 (0.055) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) • ENHANCEMENT MODE BSC • INTEGRAL PROTECTION DIODE TO–247 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Source Pin 3 – Drain BUZ905P & BUZ906P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900P BUZ901P VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase =

1.6. buz907d_buz908d.pdf Size:28K _magnatec

BUZ90
BUZ90
BUZ907D MAGNA BUZ908D TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL TO–3 BUZ902D & BUZ903D Pin 1 – Gate Pin 2 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907D BUZ908D VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. F

1.7. buz900_buz901.pdf Size:63K _magnatec

BUZ90
BUZ90
BUZ900 www.DataSheet4U.com MAGNA BUZ901 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905 & BUZ906 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900 BUZ901 VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1°C/W Prelim. 10/94

1.8. buz907p_buz908p.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ907P MAGNA BUZ908P TEC MECHANICAL DATA Dimensions in mm P–CHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • HIGH VOLTAGE (220V & 250V) 1.01 (0.040) • HIGH ENERGY RATING 1.40 (0.055) • ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) • INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC • COMPLIMENTARY N–CHANNEL TO-247 BUZ902P & BUZ903P Pin 1 – Gate Pin 3 – Drain Pin 2 – Source Case– Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907P BUZ908P VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Stor

1.9. buz905x4s_buz906x4s.pdf Size:35K _magnatec

BUZ90
BUZ90
BUZ905X4S MAGNA BUZ906X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) FEATURES 4 3 • HIGH SPEED SWITCHING 3.3 (0.129) 5.1 (0.201) 4.0 (0.157) 3.6 (0.143) 5.9 (0.232) R = (2 Places) • P–CHANNEL POWER MOSFET 14.9 (0.587) 1.95 (0.077) 15.1 (0.594) 2.14 (0.084) 30.1 (1.185) • SEMEFAB DESIGNED AND DIFFUSED 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 • INTEGRAL PROTECTION DIODE Pin 1 – Drain Pin 2 – Source • N–CHANNEL ALSO AVAILABLE Pin 3 – Gate Pin 4 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C

1.10. buz902_buz903.pdf Size:50K _magnatec

BUZ90
BUZ90
BUZ902 MAGNA BUZ903 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL TO–3 BUZ907 & BUZ908 Pin 1 – Gate Pin 2 – Drain Case – Source www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902 BUZ903 VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1°C/W Prelim. 01/97 Magnatec. Telephone (01455) 55

1.11. buz902d_buz903d.pdf Size:50K _magnatec

BUZ90
BUZ90
BUZ902D MAGNA BUZ903D TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL TO–3 BUZ907D & BUZ908D Pin 1 – Gate Pin 2 – Drain Case – Source www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902D BUZ903D VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone

1.12. buz905dp_buz906dp.pdf Size:43K _magnatec

BUZ90
BUZ90
BUZ905DP MAGNA BUZ906DP TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 • P–CHANNEL POWER MOSFET 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODE 5.45 5.45 • N–CHANNEL ALSO AVAILABLE AS TO–3PBL BUZ900DP & BUZ901DP Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905DP BUZ906DP VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal

1.13. buz905d_buz906d.pdf Size:44K _magnatec

BUZ90
BUZ90
BUZ905D MAGNA BUZ906D TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ900D & BUZ901D • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905D BUZ906D VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Therm

1.14. buz907dp_buz908dp.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ907DP MAGNA BUZ908DP TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODES 5.45 5.45 • COMPLIMENTARY N–CHANNEL TO-3PBL BUZ902DP & BUZ903DP Pin 3 – Drain Pin 1 – Gate Pin 2 – Source Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907DP BUZ908DP VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fa

1.15. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm PCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY NCHANNEL TO3 BUZ902 & BUZ903 Pin 1 Gate Pin 2 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ907 BUZ908 VDSX Drain Source Voltage -220V -250V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 1C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 1.1 O 20 Max. 30.2 0.15 O 1

1.16. buz905p_buz906p.pdf Size:40K _magnatec

BUZ90
BUZ90
BUZ905P MAGNA BUZ906P TEC MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • P–CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • SEMEFAB DESIGNED AND DIFFUSED 1.01 (0.040) • HIGH VOLTAGE (160V & 200V) 1.40 (0.055) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) • ENHANCEMENT MODE BSC • INTEGRAL PROTECTION DIODE TO–247 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Source Pin 3 – Drain BUZ900P & BUZ901P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905P BUZ906P VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tc

1.17. buz902dp_buz903dp.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ902DP MAGNA BUZ903DP TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODES 5.45 5.45 • COMPLIMENTARY P–CHANNEL TO-3PBL BUZ907DP & BUZ908DP Pin 3 – Drain Pin 1 – Gate Pin 2 – Source Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902DP BUZ903DP VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (0

1.18. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm NCHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) HIGH VOLTAGE (220V & 250V) 1.01 (0.040) HIGH ENERGY RATING 1.40 (0.055) ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC COMPLIMENTARY PCHANNEL TO-247 BUZ907P & BUZ908P Pin 1 Gate Pin 2 Source Pin 3 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ902P BUZ903P VDSX Drain Source Voltage 220V 250V VGSS Gate Source Voltage 14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj M

1.19. buz900x4s_buz901x4s.pdf Size:35K _magnatec

BUZ90
BUZ90
BUZ900X4S MAGNA BUZ901X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) FEATURES 4 3 • HIGH SPEED SWITCHING 3.3 (0.129) 5.1 (0.201) 4.0 (0.157) 3.6 (0.143) 5.9 (0.232) R = (2 Places) • N–CHANNEL POWER MOSFET 14.9 (0.587) 1.95 (0.077) 15.1 (0.594) 2.14 (0.084) 30.1 (1.185) • SEMEFAB DESIGNED AND DIFFUSED 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 • INTEGRAL PROTECTION DIODE Pin 1 – Drain Pin 2 – Source • P–CHANNEL ALSO AVAILABLE Pin 3 – Gate Pin 4 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C

1.20. buz905-06.pdf Size:40K _magnatec

BUZ90
BUZ90
BUZ905 MAGNA BUZ906 TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905 BUZ906 VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1.0°C/W Prelim. 10/94 Magnatec. Tel

Otros transistores... BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

 

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com