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BUZ90
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BUZ90
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BUZ90
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Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP18T10GH-HF
AP18T10GI ..AP4036AGYT-HF
AP4085I ..AP55T06GS-HF
AP55T10GH-HF ..AP9450GYT-HF
AP9451GG-HF ..AP9970GK-HF
AP9970GP-HF ..APT40M35PVR
APT40M42JN ..AUIRFB3206
AUIRFB3207 ..BF1208
BF1208D ..BLF6G15L-500H
BLF6G15LS-500H ..BSC052N03LS
BSC052N03SG ..BSS84L
BSS84LT1 ..BUK7215-55A
BUK72150-55A ..BUK9520-55
BUK9520-55A ..BUZ902DP
BUZ902P ..CEDF634
CEDF640 ..CEP3100
CEP3120 ..DMC4028SSD
DMC4040SSD ..EC3A04B
EC4401C ..FDB120N10
FDB12N50F ..FDD5N50
FDD5N50F ..FDMC7660
FDMC7660 ..FDP025N06
FDP030N06 ..FDS3992
FDS3992 ..FDV305N
FDY1002PZ ..FQD12P10TM_F085
FQD13N06 ..FQPF5N40
FQPF5N40 ..FRS140D
FRS140H ..H12N65F
H2301N ..HAT2033R
HAT2036R ..HUF75307D3
HUF75307D3S ..IPA65R600E6
IPA65R660CFD ..IPD068P03L3G
IPD075N03LG ..IPI60R385CP
IPI60R520CP ..IPP80N06S2-09
IPP80N06S2-H5 ..IRF1607
IRF1902 ..IRF635
IRF636A ..IRF7416Q
IRF741FI ..IRF9520N
IRF9520NL ..IRFF310
IRFF320 ..IRFP044
IRFP044N ..IRFR224A
IRFR2307Z ..IRFS721
IRFS722 ..IRFU9120N
IRFU9121 ..IRL630S
IRL631 ..IRLU2908
IRLU3103 ..IXFH150N17T
IXFH150N17T2 ..IXFK48N60Q3
IXFK50N50 ..IXFP4N100P
IXFP4N100PM ..IXFV26N60P
IXFV26N60PS ..IXTA26P20P
IXTA28P065T ..IXTH36P10
IXTH36P15P ..IXTP180N085T
IXTP180N10T ..IXTT100N25P
IXTT10N100D ..JANSR2N7402
JANSR2N7403 ..KMB6D0DN30QA
KMB6D0DN30QB ..KU2307K
KU2307Q ..MTB30N06J3
MTB30N06Q8 ..MTN2328N3
MTN2342N3 ..MTP4835V8
MTP50P03HDL ..NTB5605P
NTB60N06 ..NTP6413AN
NTR0202PL ..PHP7N60E
PHP80N06LT ..PSMN102-200Y
PSMN130-200D ..RF1S30P05SM
RF1S30P06SM ..RJK03C0DPA
RJK03C1DPB ..RQJ0303PGDQA
RQJ0304DQDQA ..SDF120JAB-U
SDF120JDA-D ..SFT1423
SFT1431 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPI15N60C3
SPI15N60CFD ..SSG4940N
SSG4940NC ..SSM3K36FS
SSM3K36MFV ..SSR3055A
SSR3055LA ..STD10NM60ND
STD10NM65N ..STE150N10
STE15N100 ..STI24NM65N
STI26NM60N ..STP19N06
STP19N06FI ..STP60NS04ZB
STP62NS04Z ..STV4NA60
STV4NA80 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2N10
UT3006 ..WTU1333
WTX1012 ..ZXMP6A17E6
ZXMP6A17G ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BUZ90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75

Tensión drenaje-fuente (Uds): 600

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 4.5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 1050

Resistencia drenaje-fuente RDS (on), Ohm: 1.6

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.3. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm NCHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) HIGH VOLTAGE (220V & 250V) 1.01 (0.040) HIGH ENERGY RATING 1.40 (0.055) ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC COMPLIMENTARY PCHANNEL TO-247 BUZ907P & BUZ908P Pin 1 Gate Pin 2 Source Pin 3 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ902P BUZ903P VDSX Drain Source Voltage 220V 250V VGSS Gate Source Voltage 14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj M

1.4. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 NCHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION DIODE 5.45 5.45 PCHANNEL ALSO AVAILABLE AS TO3PBL BUZ905DP & BUZ906DP Pin 1 Gate Pin 2 Source Pin 3 Drain DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain Source Voltage 160V 200V VGSS Gate Source Voltage 14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25C 250W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 0.5C/W Prelim. 2/95

1.5. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm PCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY NCHANNEL TO3 BUZ902 & BUZ903 Pin 1 Gate Pin 2 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ907 BUZ908 VDSX Drain Source Voltage -220V -250V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 1C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 1.1 O 20 Max. 30.2 0.15 O 1

Otros transistores... BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

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