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IRF730 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF730

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100

Tensión drenaje-fuente (Uds): 400

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 5.5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 800

Resistencia drenaje-fuente RDS (on), Ohm: 1

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET IRF730

IRF730 PDF doc:

1.1. irf730_1.pdf Size:59K _philips

IRF730
IRF730

Philips Semiconductors Product specification PowerMOS transistor IRF730 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V High thermal cycling performance Low thermal resistance ID = 7.2 A g RDS(ON) ? 1 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field-ef

1.2. irf730.pdf Size:255K _st

IRF730
IRF730

IRF730 N-channel 400V - 0.75? - 5.5A TO-220 PowermeshII Power MOSFET General features Type VDSS RDS(on) ID IRF730 400V <1? 5.5A Exceptional dv/dt capability 100% avalanche tested Low gate charge 3 2 1 Description TO-220 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit

1.3. irf730-1-2-3-fi.pdf Size:486K _st2

IRF730
IRF730

1.4. irf730b.pdf Size:898K _fairchild_semi

IRF730
IRF730

November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC) planar, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switchin

1.5. irf730.pdf Size:177K _fairchild_semi

IRF730
IRF730

1.6. irf730a.pdf Size:376K _international_rectifier

IRF730
IRF730

PD - 94976 SMPS MOSFET IRF730APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.7. irf7309.pdf Size:162K _international_rectifier

IRF730
IRF730

PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 30V -30V Available in Tape & Reel 3 6 S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET RDS(on) 0.050? 0.10? Top View Description Fifth Generation HEXFETs from I

1.8. irf730as-l.pdf Size:309K _international_rectifier

IRF730
IRF730

PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.9. irf7303.pdf Size:111K _international_rectifier

IRF730
IRF730

PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 30V Dual N-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 RDS(on) = 0.050? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

1.10. irf730pbf.pdf Size:2193K _international_rectifier

IRF730
IRF730

PD - 94977 IRF730PbF Lead-Free 02/03/04 Document Number: 91047 www.vishay.com 1 IRF730PbF Document Number: 91047 www.vishay.com 2 IRF730PbF Document Number: 91047 www.vishay.com 3 IRF730PbF Document Number: 91047 www.vishay.com 4 IRF730PbF Document Number: 91047 www.vishay.com 5 IRF730PbF Document Number: 91047 www.vishay.com 6 IRF730PbF TO-220AB Package Outline Dime

1.11. irf7304.pdf Size:112K _international_rectifier

IRF730
IRF730

PD - 9.1240C IRF7304 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual P-Channel Mosfet VDSS = -20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.090? Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

1.12. irf7306.pdf Size:113K _international_rectifier

IRF730
IRF730

PD - 9.1241C IRF7306 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) = 0.10? G2 D2 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t

1.13. irf730s.pdf Size:895K _international_rectifier

IRF730
IRF730

PD - 95115 IRF730SPbF Lead-Free 3/16/04 Document Number: 91048 www.vishay.com 1 IRF730SPbF Document Number: 91048 www.vishay.com 2 IRF730SPbF Document Number: 91048 www.vishay.com 3 IRF730SPbF Document Number: 91048 www.vishay.com 4 IRF730SPbF Document Number: 91048 www.vishay.com 5 IRF730SPbF Document Number: 91048 www.vishay.com 6 IRF730SPbF D2Pak Package Outline D

1.14. irf7301.pdf Size:113K _international_rectifier

IRF730
IRF730

PD - 9.1238C IRF7301 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual N-Channel Mosfet VDSS = 20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.050? Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

1.15. irf730.pdf Size:178K _international_rectifier

IRF730
IRF730

1.16. irf730as.pdf Size:149K _international_rectifier

IRF730
IRF730

PD-93772A SMPS MOSFET IRF730AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0? 5.5A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltag

1.17. irf7307.pdf Size:194K _international_rectifier

IRF730
IRF730

PD - 9.1242B IRF7307 HEXFET Power MOSFET Generation V Technology N -C HAN NEL M O SF ET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 VDSS 20V -20V Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating P-CH ANNEL MOSFET Fast Switching Top View RDS(on) 0.050? 0.090? Description Fifth Generation HEXFETs from

1.18. irf730a.pdf Size:927K _samsung

IRF730
IRF730

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

1.19. irfp330-333_irf730-733.pdf Size:329K _samsung

IRF730
IRF730



1.20. irf730s_sihf730s.pdf Size:165K _vishay

IRF730
IRF730

IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition Surface Mount RDS(on) (?)VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 5.7 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Single Simple Drive

1.21. irf730_sihf730.pdf Size:196K _vishay

IRF730
IRF730

IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.7 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220

1.22. irf730a_sihf730a.pdf Size:206K _vishay

IRF730
IRF730

IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) (?)VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effective Coss Spec

1.23. irf730.pdf Size:114K _inchange_semiconductor

IRF730
IRF730

MOSFET INCHANGE IRF730 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Simple drive requirements Fast switching VDSS=400V; RDS(ON)ЎЬ 1.0¦ё ;ID=5.5A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=2

1.24. hirf730.pdf Size:46K _hsmc

IRF730
IRF730

Spec. No. : MOS200406 HI-SINCERITY Issued Date : 2004.10.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF730 Series Pin Assignment HIRF730 / HIRF730F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source Third Generation HEXFETs from international Rectifier provide the designer with the be

1.25. irf730.pdf Size:94K _a-power

IRF730
IRF730

IRF730 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 400V Ў Fast Switching Characteristic RDS(ON) 1? Ў Simple Drive Requirement ID 5.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-

1.26. irf730s.pdf Size:1398K _kexin

IRF730
IRF730

SMD Type MOSFET N-Channel MOSFET IRF730S (KRF730S) ■ Features ● VDS (V) =400V ● ID = 5.5 A (VGS = 10V) ● RDS(ON) < 1Ω (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ±20 Tc = 25℃ 5.5 Continuous Drain Current ID Tc

Otros transistores... IRF720A , IRF720FI , IRF720S , IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , APT50M38JFLL , IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 .

 


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