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IRFP250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP250

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180

Tensión drenaje-fuente (Uds): 200

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 33

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.085

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de MOSFET IRFP250

IRFP250 PDF doc:

1.1. irfp250.pdf Size:271K _st

IRFP250
IRFP250

IRFP250 N-CHANNEL 200V - 0.073? - 33A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID IRFP250 200V < 0.085? 33 A TYPICAL RDS(on) = 0.073? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced

1.2. irfp250.pdf Size:164K _international_rectifier

IRFP250
IRFP250

1.3. irfp250-253.pdf Size:501K _international_rectifier

IRFP250
IRFP250



1.4. irfp250pbf.pdf Size:1992K _international_rectifier

IRFP250
IRFP250

PD - 95008 IRFP250PbF Lead-Free 2/11/04 Document Number: 91212 www.vishay.com 1 IRFP250PbF Document Number: 91212 www.vishay.com 2 IRFP250PbF Document Number: 91212 www.vishay.com 3 IRFP250PbF Document Number: 91212 www.vishay.com 4 IRFP250PbF Document Number: 91212 www.vishay.com 5 IRFP250PbF Document Number: 91212 www.vishay.com 6 IRFP250PbF TO-247AC Package Outline

1.5. irfp250n.pdf Size:122K _international_rectifier

IRFP250
IRFP250

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

1.6. irfp250a.pdf Size:926K _samsung

IRFP250
IRFP250

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.7. irfp250_sihfp250.pdf Size:1453K _vishay

IRFP250
IRFP250

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

Otros transistores... IRFP240A , IRFP240FI , IRFP241 , IRFP242 , IRFP243 , IRFP244 , IRFP244A , IRFP245 , IRF630 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 .

 


IRFP250
  IRFP250
  IRFP250
  IRFP250
 
IRFP250
  IRFP250
  IRFP250
  IRFP250
 

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Introduzca al menos 2 números o letras