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J112
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J112
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J112
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10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF16N60NT
FCPF190N60 ..FDC8884
FDC8886 ..FDMA410NZ
FDMA420NZ ..FDMS7698
FDMS7700S ..FDPF10N60NZ
FDPF10N60ZUT ..FDS9435A
FDS9926A ..FQB5N90
FQB6N40C ..FQPF85N06
FQPF8N60C ..FRS9240R
FRX130D1 ..H5N2801P
H5N2802PF ..HAT2131R
HAT2132H ..HUF75345P3
HUF75345S3S ..IPB048N06LG
IPB049N06L3G ..IPD30N06S2-15
IPD30N06S2-23 ..IPI90R340C3
IPI90R500C3 ..IPU075N03LG
IPU090N03LG ..IRF3205ZS
IRF330 ..IRF6619
IRF6620 ..IRF7493
IRF7494 ..IRF9632
IRF9633 ..IRFH5255
IRFH5300 ..IRFP231
IRFP232 ..IRFR420
IRFR420A ..IRFS9141
IRFS9142 ..IRFWZ24A
IRFWZ34A ..IRLH5030
IRLH5034 ..IRLW630A
IRLW640A ..IXFH230N075T2
IXFH230N10T ..IXFK94N50P2
IXFK98N50P3 ..IXFR180N06
IXFR180N07 ..IXFX180N10
IXFX180N15P ..IXTA52P10P
IXTA56N15T ..IXTH5N100
IXTH5N100A ..IXTP26P20P
IXTP28P065T ..IXTT440N055T2
IXTT48P20P ..KF2N60P
KF3N40D ..KP101G
KP103E ..MCH3914
MCH5908 ..MTB6D0N03ATV8
MTB80N08J3 ..MTN3410F3
MTN3410J3 ..NDB4060
NDB4060L ..NTD4858N
NTD4860N ..NTZD3152P
NTZD3154N ..PMBF4391
PMBF4392 ..PSMN3R0-60ES
PSMN3R0-60PS ..RFD15P06SM
RFD16N03L ..RJK0658DPA
RJK0659DPA ..RRH100P03
RRH140P03 ..SDF130JAA-S
SDF130JAA-U ..SFS9Z34
SFT1341 ..SMG2358N
SMG2359P ..SML50A15
SML50A19 ..SPB11N60S5
SPB12N50C3 ..SSF8N80A
SSF8N90A ..SSM3K04FU
SSM3K04FV ..SSP4N55
SSP4N60 ..STB40NS15
STB416D ..STD4NK80Z-1
STD4NS25 ..STF8209
STF8209A ..STL75N3LLZH5
STL75N8LF6 ..STP19NM50N
STP200N4F3 ..STP60NF06FP
STP60NF06L ..STT02N10
STT02N20 ..STV4N100
STV4NA60 ..TK12A45D
TK12A50D ..TPC6108
TPC6109-H ..TPCA8A01-H
TPCA8A02-H ..UT3404
UT3406 ..ZVN0545A
ZVN0545G ..ZXMS6004DT8
ZXMS6004FF ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

J112 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J112

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.4

Tensión drenaje-fuente (Uds): 35

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.05

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 3

Resistencia drenaje-fuente RDS (on), Ohm: 30

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de MOSFET J112

J112 PDF doc:

1.1. j112.pdf Size:110K _motorola

J112
J112
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor NChannel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainGate Voltage VDG 35 Vdc 2 3 GateSource Voltage VGS 35 Vdc CASE 2904, STYLE 5 Gate Current IG 50 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 35 Vdc (IG = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VGS = 15 Vdc) Gate Source Cutoff Voltage VGS(off) 1.0 5.0 Vdc (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current ID(off) 1.0 nAdc (VDS = 5.0 Vdc, VGS = 10 Vdc) ON CHARACTERISTICS ZeroGateVoltage Drain Current(1) IDSS 5.0 mAdc (VDS = 15 Vdc)

1.2. j112rev0.pdf Size:110K _motorola

J112
J112
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor NChannel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainGate Voltage VDG 35 Vdc 2 3 GateSource Voltage VGS 35 Vdc CASE 2904, STYLE 5 Gate Current IG 50 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 35 Vdc (IG = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VGS = 15 Vdc) Gate Source Cutoff Voltage VGS(off) 1.0 5.0 Vdc (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current ID(off) 1.0 nAdc (VDS = 5.0 Vdc, VGS = 10 Vdc) ON CHARACTERISTICS ZeroGateVoltage Drain Current(1) IDSS 5.0 mAdc (VDS = 15 Vdc)

1.3. j111_j112_j113_cnv.pdf Size:31K _philips

J112
J112
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.4. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J112
J112
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.5. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J112
J112
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.6. ssm3j112tu.pdf Size:136K _toshiba

J112
J112
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 790m? (max) (@VGS = -4 V) 1.70.1 Ron = 390m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source voltage VGSS 20 V DC ID -1.1 Drain current A Pulse IDP -2.2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 C 1: Gate Storage temperature range Tstg -55~150 C 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ? operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEIT

1.7. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J112
J112
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.8. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J112
J112
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.9. j111_j112.pdf Size:85K _onsemi

J112
J112
J111, J112 JFET Chopper Transistors N-Channel Depletion Features http://onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

1.10. hj112.pdf Size:58K _hsmc

J112
J112
Spec. No. : HE6030 HI-SINCERITY Issued Date : 1998.07.01 Revised Date : 2005.07.14 MICROELECTRONICS CORP. Page No. : 1/5 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. TO-252 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................................

Otros transistores... IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , IRFZ34N , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 .

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