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J112
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J112
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10N30 ..2N5911
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2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP0603GM-HF
AP06P20GJ-HF ..AP2607AGY-HF
AP2607GY-HF ..AP4502AGM-HF
AP4502GM ..AP80N30W
AP80T10GP-HF ..AP9579GS-HF
AP9581GP-HF ..APT1001R2HN
APT1001R3AN ..ATP212
ATP213 ..AUIRFU4615
AUIRFU5305 ..BFC19
BFC21 ..BLL1214-250
BLL1214-250R ..BSO110N03MSG
BSO119N03S ..BUK453-100A
BUK454-800A ..BUK764R0-55B
BUK764R0-75C ..BUK9Y104-100B
BUK9Y11-30B ..CEB60N06G
CEB60N10 ..CEM4204
CEM4207 ..CEU14G04
CEU16N10 ..DMN3404L
DMN3730U ..FCD7N60
FCD9N60NTM ..FDC6305N
FDC6306P ..FDG6318PZ
FDG6320C ..FDMS7608S
FDMS7608S ..FDP8874
FDP8874 ..FDS8449_F085
FDS86106 ..FQA11N90C_F109
FQA11N90_F109 ..FQP24N08
FQP27N25 ..FRF450R
FRF9150D ..FSS234R
FSS23A4D ..H7N1002AB
H7N1002LD ..HAT2202C
HAT2203C ..HUF76413D3S
HUF76413P3 ..IPB230N06L3G
IPB260N06N3G ..IPD90N03S4L-02
IPD90N03S4L-03 ..IPP110N06LG
IPP110N20N3G ..IRC5305
IRC530A ..IRF513
IRF520 ..IRF712
IRF713 ..IRF7831
IRF7832 ..IRFB4229
IRFB4233 ..IRFI644G
IRFI710A ..IRFP4410Z
IRFP442 ..IRFS3206
IRFS3207 ..IRFSZ30
IRFSZ32 ..IRFZ46Z
IRFZ46ZL ..IRLML9301
IRLML9303 ..IXFA6N120P
IXFA76N15T2 ..IXFH7N90
IXFH7N90Q ..IXFN22N120
IXFN230N10 ..IXFT15N100Q
IXFT15N100Q3 ..IXKC15N60C5
IXKC19N60C5 ..IXTH110N25T
IXTH11N80 ..IXTK75N30
IXTK80N25 ..IXTP90N055T2
IXTP90N075T2 ..IXTX20N140
IXTX22N100L ..KHB019N20F1
KHB019N20F2 ..KP745B
KP745G ..MMBFJ210
MMBFJ211 ..MTDNK2N6
MTDP2004S6R ..MTN8N50E3
MTN8N50FP ..NDH8504P
NDP4050 ..NTJD4105C
NTJD4152P ..PHB42N03LT
PHB44N06LT ..PMV20XN
PMV213SN ..R5007ANJ
R5007ANX ..RFP40N10
RFP40N10LE ..RJK5012DPE
RJK5012DPP-M0 ..RU1C002ZP
RU1E002SP ..SDF9N100JED-U
SDF9N100SXH ..SID20N06-90I
SID3055 ..SML10B75
SML10B75XX ..SNN01Z10D
SNN01Z10Q ..SSD40N10-30D
SSD40P04-20D ..SSM3J134TU
SSM3J135TU ..SSM6N36TU
SSM6N37CTD ..STB18NM80
STB190NF04 ..STD3NK60ZD
STD3NK80Z ..STF6N52K3
STF6N62K3 ..STLT19FI
STLT20 ..STP3NK100Z
STP3NK60Z ..STS14N3LLH5
STS19N3LLH6 ..STW70N10F4
STW75N06 ..TK40J60T
TK40J60U ..TPC8121
TPC8122 ..TPCP8J01
TPCS8004 ..UTT200N03
UTT20N06 ..ZXMHC10A07T8
ZXMHC3A01N8 ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

J112 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J112

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35

Tensión drenaje-fuente (Uds): 35

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.05

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 3

Resistencia drenaje-fuente RDS (on), Ohm: 30

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de MOSFET J112

J112 PDF doc:

1.1. j112.pdf Size:110K _motorola

J112
J112
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor NChannel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainGate Voltage VDG 35 Vdc 2 3 GateSource Voltage VGS 35 Vdc CASE 2904, STYLE 5 Gate Current IG 50 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 35 Vdc (IG = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VGS = 15 Vdc) Gate Source Cutoff Voltage VGS(off) 1.0 5.0 Vdc (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current ID(off) 1.0 nAdc (VDS = 5.0 Vdc, VGS = 10 Vdc) ON CHARACTERISTICS ZeroGateVoltage Drain Current(1) IDSS 5.0 mAdc (VDS = 15 Vdc)

1.2. j112rev0.pdf Size:110K _motorola

J112
J112
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor NChannel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainGate Voltage VDG 35 Vdc 2 3 GateSource Voltage VGS 35 Vdc CASE 2904, STYLE 5 Gate Current IG 50 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 35 Vdc (IG = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VGS = 15 Vdc) Gate Source Cutoff Voltage VGS(off) 1.0 5.0 Vdc (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current ID(off) 1.0 nAdc (VDS = 5.0 Vdc, VGS = 10 Vdc) ON CHARACTERISTICS ZeroGateVoltage Drain Current(1) IDSS 5.0 mAdc (VDS = 15 Vdc)

1.3. j111_j112_j113_cnv.pdf Size:31K _philips

J112
J112
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.4. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J112
J112
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.5. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J112
J112
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.6. ssm3j112tu.pdf Size:136K _toshiba

J112
J112
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 790m? (max) (@VGS = -4 V) 1.70.1 Ron = 390m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source voltage VGSS 20 V DC ID -1.1 Drain current A Pulse IDP -2.2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 C 1: Gate Storage temperature range Tstg -55~150 C 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ? operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEIT

1.7. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J112
J112
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.8. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J112
J112
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.9. j111_j112.pdf Size:85K _onsemi

J112
J112
J111, J112 JFET Chopper Transistors N-Channel Depletion Features http://onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

1.10. hj112.pdf Size:58K _hsmc

J112
J112
Spec. No. : HE6030 HI-SINCERITY Issued Date : 1998.07.01 Revised Date : 2005.07.14 MICROELECTRONICS CORP. Page No. : 1/5 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. TO-252 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................................

Otros transistores... IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , IRFZ34N , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 .

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