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J112
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2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
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3N60 ..5N65
5N65K ..AO4806
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AP4226AGM ..AP62T03GJ
AP6618GM-HF ..AP9468GJ
AP9468GJ-HF ..AP9972GI-HF
AP9972GP-HF ..APT5019HVR
APT5020BN ..AUIRFI3205
AUIRFIZ34N ..BF256B
BF256C ..BLF6G22L-40P
BLF6G22LS-100 ..BSC084P03NS3EG
BSC084P03NS3G ..BSZ050N03LSG
BSZ050N03MSG ..BUK7507-55B
BUK7508-40B ..BUK9606-55A
BUK9606-55B ..BUZ908
BUZ908D ..CEF08N6A
CEF08N8 ..CEP6186
CEP630N ..DMG4466SSS
DMG4466SSSL ..ECH8655R
ECH8656 ..FDB3632
FDB3632 ..FDD6690A
FDD6760A ..FDMC7696
FDMC7696 ..FDP090N10
FDP090N10 ..FDS4559_F085
FDS4672A ..FDZ391P
FJN598J ..FQD20N06
FQD2N100 ..FQPF85N06
FQPF8N60C ..FRS440R
FRS9130D ..H5N2001LS
H5N2003P ..HAT2064R
HAT2065R ..HUF75329P3
HUF75329S3 ..IPB023N04NG
IPB023N06N3G ..IPD15N06S2L-64
IPD160N04LG ..IPI80N04S3-H4
IPI80N04S4-03 ..IPP90R1K2C3
IPP90R340C3 ..IRF2807ZS
IRF2903Z ..IRF6603
IRF6604 ..IRF7463
IRF7465 ..IRF9543
IRF9610 ..IRFH5025
IRFH5053 ..IRFP150
IRFP150A ..IRFR3707Z
IRFR3707ZC ..IRFS830A
IRFS831 ..IRFW630A
IRFW634A ..IRLB8743
IRLB8748 ..IRLU8259
IRLU8721 ..IXFH20N100P
IXFH20N60 ..IXFK78N50P3
IXFK80N15Q ..IXFR100N25
IXFR102N30P ..IXFX13N100
IXFX140N25T ..IXTA3N60P
IXTA42N15T ..IXTH450P2
IXTH460P2 ..IXTP220N055T
IXTP220N075T ..IXTT24P20
IXTT26N50P ..KF13N50P
KF13N60N ..KMC7D0CN20CA
KMD4D5P30XA ..MCH3374
MCH3375 ..MTB55N03J3
MTB55N03N3 ..MTN2N70FP
MTN2N70I3 ..MTS3572G6
MTW32N20E ..NTD3055L170
NTD40N03R ..NTTFS4824N
NTTFS4928N ..PHW8ND50E
PHW9N60E ..PSMN1R8-30PL
PSMN1R9-25YLC ..RFB18N10CS
RFD10P03L ..RJK0451DPB
RJK0452DPB ..RQK0603CGDQA
RQK0603CGDQS ..SDF150JAB
SDF150NA40HE ..SFW9510
SFW9520 ..SMK0825D
SMK0825D2 ..SML6040AN
SML6040BN ..SPP07N60C3
SPP07N60CFD ..SSH15N55A
SSH15N60 ..SSM5N15FE
SSM5N15FU ..SSS4N80AS
SSS4N90A ..STD12NF06
STD12NF06L ..STE40NK90ZD
STE45N50 ..STK0380D
STK0380F ..STP20NF20
STP20NK50Z ..STP6NK90Z
STP70N10F4 ..STW11NK90Z
STW11NM80 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3458
UT3N01Z ..ZVN2120G
ZVN2535A ..ZXMS6006SG
00000000..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

J112 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J112

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35

Tensión drenaje-fuente (Uds): 35

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.05

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 3

Resistencia drenaje-fuente RDS (on), Ohm: 30

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de MOSFET J112

J112 PDF doc:

1.1. j112.pdf Size:110K _motorola

J112
J112
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor NChannel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainGate Voltage VDG 35 Vdc 2 3 GateSource Voltage VGS 35 Vdc CASE 2904, STYLE 5 Gate Current IG 50 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 35 Vdc (IG = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VGS = 15 Vdc) Gate Source Cutoff Voltage VGS(off) 1.0 5.0 Vdc (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current ID(off) 1.0 nAdc (VDS = 5.0 Vdc, VGS = 10 Vdc) ON CHARACTERISTICS ZeroGateVoltage Drain Current(1) IDSS 5.0 mAdc (VDS = 15 Vdc)

1.2. j112rev0.pdf Size:110K _motorola

J112
J112
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor NChannel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainGate Voltage VDG 35 Vdc 2 3 GateSource Voltage VGS 35 Vdc CASE 2904, STYLE 5 Gate Current IG 50 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 35 Vdc (IG = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VGS = 15 Vdc) Gate Source Cutoff Voltage VGS(off) 1.0 5.0 Vdc (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current ID(off) 1.0 nAdc (VDS = 5.0 Vdc, VGS = 10 Vdc) ON CHARACTERISTICS ZeroGateVoltage Drain Current(1) IDSS 5.0 mAdc (VDS = 15 Vdc)

1.3. j111_j112_j113_cnv.pdf Size:31K _philips

J112
J112
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.4. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J112
J112
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.5. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J112
J112
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.6. ssm3j112tu.pdf Size:136K _toshiba

J112
J112
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 790m? (max) (@VGS = -4 V) 1.70.1 Ron = 390m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source voltage VGSS 20 V DC ID -1.1 Drain current A Pulse IDP -2.2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 C 1: Gate Storage temperature range Tstg -55~150 C 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ? operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEIT

1.7. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J112
J112
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.8. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J112
J112
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.9. j111_j112.pdf Size:85K _onsemi

J112
J112
J111, J112 JFET Chopper Transistors N-Channel Depletion Features http://onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

1.10. hj112.pdf Size:58K _hsmc

J112
J112
Spec. No. : HE6030 HI-SINCERITY Issued Date : 1998.07.01 Revised Date : 2005.07.14 MICROELECTRONICS CORP. Page No. : 1/5 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. TO-252 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................................

Otros transistores... IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , IRFZ34N , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 .

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