Todos los MOSFET

Introduzca al menos 3 números o letras
 
MTP6N60
  MTP6N60
  MTP6N60
 
MTP6N60
  MTP6N60
  MTP6N60
 
MTP6N60
  MTP6N60
 
 
Liste
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK652R6-40C
BUK653R2-55C ..BUK9212-55B
BUK9213-30A ..BUZ46
BUZ50A ..CED16N10L
CED20P06 ..CEP02N6A
CEP02N6G ..CPH3350
CPH3351 ..DMP2104LP
DMP2104V ..FCPF7N60NT
FCPF7N60NT ..FDD18N20LZ
FDD18N20LZ ..FDMA291P
FDMA3023PZ ..FDMS86105
FDMS86105 ..FDPF5N60NZ
FDPF5N60NZ ..FDS8958B
FDS8978 ..FQB22P10TM_F085
FQB25N33TM_F085 ..FQP9N30
FQP9N90C ..FRL9230R
FRM130D ..GWM160-0055X1-SL
GWM160-0055X1-SL ..HAT1046R
HAT1047R ..HEPF2004
HEPF2007A ..IPA057N06N3G
IPA057N08N3G ..IPB80N04S2L-03
IPB80N04S3-03 ..IPI100N10S3-05
IPI100P03P3L-04 ..IPP60R199CP
IPP60R250CP ..IRF1010NS
IRF1010Z ..IRF610A
IRF610S ..IRF7326D2
IRF7328 ..IRF840I
IRF840S ..IRFBL10N60A
IRFBL12N50A ..IRFL1006
IRFL110 ..IRFPF50
IRFPG30 ..IRFS510A
IRFS520 ..IRFU2905Z
IRFU310 ..IRL3705Z
IRL3705ZL ..IRLR8726
IRLR8729 ..IXFE44N60
IXFE48N50Q ..IXFK230N20T
IXFK240N15T2 ..IXFN48N55
IXFN48N60P ..IXFT70N15
IXFT70N20Q3 ..IXTA152N085T7
IXTA15P15T ..IXTH220N055T
IXTH220N075T ..IXTN90N25L2
IXTN90P20P ..IXTQ40N50L2
IXTQ40N50Q ..IXTZ35N25MA
IXTZ35N25MB ..KMA2D4P20SA
KMA2D7DP20X ..KTK5132E
KTK5132S ..NDB4050L
NDB4060 ..NTD4815N
NTD4855N ..NTTFS5826NL
NTUD3127C ..PHX6ND50E
PHX7N60E ..PSMN2R6-40YS
PSMN2R7-30PL ..RFD7N10LE
RFD7N10LESM ..RJK1051DPB
RJK1052DPB ..RSD160P05
RSD175N10 ..SDF360JED
SDF3N90 ..SGSP319
SGSP321 ..SML1004RCN
SML1004RGN ..SMN03T80F
SMN03T80IS ..SSD12P10
SSD15N10 ..SSM3J05FU
SSM3J09FU ..SSM6L40TU
SSM6N04FU ..STB14NK60Z
STB14NM50N ..STD35NF3LL
STD38NH02L ..STF34NM60ND
STF35N65M5 ..STL60N32N3LL
STL60N3LLH5 ..STP36NF06L
STP38N06 ..STP9NK65ZFP
STP9NK70Z ..STW45NM60
STW45NM60D ..TK35S04K3L
TK3A60DA ..TPC8108
TPC8109 ..TPCP8206
TPCP8301 ..VMK90-02T2
VMM1500-0075X2 ..ZXMN3AMC
ZXMN3B01F ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

MTP6N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP6N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125

Tensión drenaje-fuente (Uds): 600

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 16.8

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 1500

Resistencia drenaje-fuente RDS (on), Ohm: 1.2

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET MTP6N60

MTP6N60 PDF doc:

1.1. mtp6n60e.pdf Size:161K _motorola

MTP6N60
MTP6N60
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6N60E/D Designer's? Data Sheet MTP6N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 6.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performance over time. In addition, this advanced TMOS RDS(on) = 1.2 OHMS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a ? draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating D safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltag

1.2. mtp6n60erev3.pdf Size:156K _motorola

MTP6N60
MTP6N60
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6N60E/D Designer's? Data Sheet MTP6N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 6.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performance over time. In addition, this advanced TMOS RDS(on) = 1.2 OHMS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a ? draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating D safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltag

1.3. mtp6n60.pdf Size:153K _st

MTP6N60
MTP6N60
MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D MTP6N60 600 V < 1.2 ? 6.8 A TYPICAL R = 1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING TO-220 SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V V Drain- gate Voltage (R = 20 k?) 600 V DG R GS VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C6.8 A o I Drain Current (continuous) at T = 100 C4.2 A D c IDM() Drain Current (pulsed) 30 A o Ptot Total Dissipation at Tc = 25 C 125 W Derating Factor 1 W/oC o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C () Pulse

1.4. mtp6n60.pdf Size:337K _st2

MTP6N60
MTP6N60

Otros transistores... MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M , MTP3N50E , MTP3N60 , MTP3N60FI , 2SK2611 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A , NDB410A , NDB5060 , NDB5060L .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com