STD17N06L
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: STD17N06L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 55
Tensión drenaje-fuente (Uds): 60V
Tensión compuerta-fuente (Ugs):
Corriente continua de drenaje (Id): 17
Temperatura operativa máxima (Tj), °C: 150
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr):
Conductancia de drenaje-sustrato (Cd), pF:
Resistencia drenaje-fuente RDS (on), Ohm:
Empaquetado / Estuche: DPAK
Búsqueda de reemplazo de MOSFET STD17N06L
STD17N06L
- PDF Hoja de especificaciones para ver o descargar.
1.1. std17n05l_std17n06l.pdf  Size:350K _st  |
 | 0) VDS = Max Rating x 0.8 Tc = 125 oC 1000 A
IGSS Gate-body Leakage VGS = 15 V 100 nA
Current (VDS = 0)
ON (?)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 A1 1.6 2.5 V
RDS(on) Static Drain-source On VGS = 5 V ID = 8.5 A 0.065 0.085 ?
Resistance VGS = 5 V ID = 8.5 A Tc = 100 oC 0.17 ?
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 17 A
VGS = 10 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs |
3.1. std17n05.pdf Size:180K _st  |
 | 5 C 10 A
I Gate-body Leakage V = 20 V 100 nA
GSS GS
Current (VDS = 0)
ON (?)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V Gate Threshold Voltage V = V I = 250 A2 2.9 4 V
GS(th) DS GS D
RDS(on) Static Drain-source On VGS = 10 V ID = 8.5 A 0.06 0.085 ?
Resistance
I On State Drain Current V > I x R 17 A
D(on) DS D(on) DS(on)max
V = 10 V
GS
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g (?) Forward V > I x R I = 8.5 A 5 8 S
fs DS D(on) DS(on)max D
Tr |
4.1. std17ne03l.pdf Size:55K _st  |
 | Min. Typ. Max. Unit
VGS(th) Gate Threshold VDS = VGS ID = 250 A 1 1.7 2.5 V
Voltage
RDS(on) Static Drain-source On VGS = 10V ID = 8.5 A 0.034 0.05 ?
Resistance VGS = 5V ID = 8.5 A 0.049 0.06 ?
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 17 A
V = 10 V
GS
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (?) Forward VDS > ID(on) x RDS(on)max ID =8.5 A 5 11 S
Transconductance
Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 680 950 pF
C Output Capacitan |
4.2. std17nf03l_std17nf03l-1.pdf Size:310K _st  |
 | A, VDD = 15V
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 5.0 C/W
Rthj-amb Thermal resistance junction-to ambient max 100 C/W
TJ Maximum lead temperature for soldering purpose 275 C
3/14
Electrical characteristics STD17NF03L - STD17NF03L-1
2 Electrical characteristics
(TCASE=25C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source
V(BR)DSS ID = 250A, VGS =0 30 V
breakdown voltage
VDS = M |
4.3. std17nf03l.pdf Size:264K _st  |
 | Min. Typ. Max. Unit
VDS > ID(on) x RDS(on)max,
gfs (1) Forward Transconductance 7S
ID =11A
Ciss Input Capacitance 330 pF
Coss Output Capacitance 90 pF
VDS = 25V, f = 1 MHz, VGS = 0
Crss Reverse Transfer 40 pF
Capacitance
2/9
STD17NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 15V, ID = 8.5A 11 ns
RG = 4.7? VGS = 4.5V
tr Rise Time 100 ns
(see test circuit, Figure 3)
VDD = 24V, ID = |
4.4. std17n.pdf Size:172K _st  |
 | 0) VDS = Max Rating x 0.8 Tc = 125 C 1000 A
I Gate-body Leakage V = 15 V 100 nA
GSS GS
Current (VDS = 0)
ON (?)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V Gate Threshold Voltage V = V I = 250 A1 1.6 2.5 V
GS(th) DS GS D
RDS(on) Static Drain-source On VGS = 5 V ID = 8.5 A 0.065 0.085 ?
o
Resistance V = 5 V I = 8.5 A T = 100 C 0.17 ?
GS D c
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 17 A
VGS = 10 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Ma |
4.5. sti17nf25_std17nf25_stf17nf25_stp17nf25.pdf Size:521K _st  |
 | allowed
2. Pulse width limited by safe operating area
3. ISD ?17A, di/dt ?200A/s, VDD < 80%V(BR)DSS
Table 2. Thermal data
TO-220
Symbol Parameter DPAK TO-220FP Unit
I?PAK
Rthj-case Thermal resistance junction-case max 1.38 5 C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 (1) 62.5 C/W
Maximum lead temperature for soldering
Tl 300 C
purpose
1. When mounted on 1inch? FR-4, 2 Oz copper board
Table 3. Avalanche data
Symbol Parameter Value Unit
Avalanche current, rep |
Otros transistores... STD17N05
, STD17N05-1
, STD17N05L
, STD17N05L-1
, STD17N05LT4
, STD17N05T4
, STD17N06
, STD17N06-1
, 2SK955
, STD17N06L-1
, STD17N06LT4
, STD17N06T4
, STD1NA60-1
, STD1NA60T4
, STD20N06-1
, STD20N06T4
, STD2N50-1
.
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