Todos los MOSFET

Introduzca al menos 3 números o letras
 
ZVN4206AV
  ZVN4206AV
  ZVN4206AV
 
ZVN4206AV
  ZVN4206AV
  ZVN4206AV
 
ZVN4206AV
  ZVN4206AV
 
 
Liste
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

ZVN4206AV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZVN4206AV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.7

Tensión drenaje-fuente (Uds): 60

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 0.6

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 100

Resistencia drenaje-fuente RDS (on), Ohm: 1

Empaquetado / Estuche: ELine

Búsqueda de reemplazo de MOSFET ZVN4206AV

ZVN4206AV PDF doc:

1.1. zvn4206av.pdf Size:98K _diodes

ZVN4206AV
ZVN4206AV
N-CHANNEL ENHANCEMENT ZVN4206AV MODE VERTICAL DMOS FET ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1? * Repetitive avalanche rating * No transient protection required D * Characterised for 5V logic drive G S APPLICATIONS * Automotive relay drivers E-Line * Stepper motor driver TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25C ID 600 mA Pulsed Drain Current IDM 8A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25C Ptot 700 mW Continuous Body Diode Current at Tamb ISD 600 mA =25C Avalanche Current Repetitive IAR 600 mA Avalanche Energy Repetitive EAR 15 mJ Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 60 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 1.3 3 V ID=1mA, VDS=

2.1. zvn4206a.pdf Size:103K _diodes

ZVN4206AV
ZVN4206AV
N-CHANNEL ENHANCEMENT ZVN4206A MODE VERTICAL DMOS FET ISSUE 2 JUNE 94 FEATURES * 60 Volt VDS * RDS(on) =1? D G S E-LINE TO92 COMPATIBLE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25C ID 600 mA Pulsed Drain Current IDM 8A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25C Ptot 0.7 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BVDSS 60 V ID=1mA, VGS=0V Voltage Gate-Source Threshold VGS(th) 1.3 3 V ID=1mA, VDS= VGS Voltage Gate-Body Leakage IGSS 100 nA VGS= 20V, VDS=0V Zero Gate Voltage Drain IDSS 10 A VDS=60V, VGS=0 Current 100 A VDS=48V, VGS=0V, T=125C(2) On-State Drain Current(1) ID(on) 3A VDS=25V, VGS=10V Static Drain-Source On-State RDS(on) 1 ? VGS=10V,ID=1.5A Resistance (1) 1.5 ? VGS=5V,ID=500mA Forward Trans

3.1. zvn4206g.pdf Size:52K _diodes

ZVN4206AV
ZVN4206AV
SOT223 N-CHANNEL ENHANCEMENT ZVN4206G MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 . FEATURES * Compact geometry D * Fast switching speeds * No secondary breakdown and Excellent temperature stability * High input impedance and low current drive S * Ease of parralleling D G 5C(2) APPLICATIONS * DC-DC converters * Solenoid / relay drivers for automotive applications * Stepper motor drivers and Print head drivers PARTMARKING DETAIL - ZVN4206 Hz ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25C ID 1A =10V N Pulsed Drain Current IDM 8A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25C Ptot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 C rator 3 - 401 ZVN4206G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 60 V ID=1mA, VGS=0V Gate-Source Threshold

3.2. zvn4206gv.pdf Size:80K _diodes

ZVN4206AV
ZVN4206AV
SOT223 N-CHANNEL ENHANCEMENT ZVN4206GV MODE VERTICAL DMOS FET ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS D * RDS(on)= 1? * Repetitive avalanche rating * No transient protection required S * Characterised for 5V logic drive D APPLICATIONS G * Automotive relay drivers * Stepper motor driver PARTMARKING DETAIL - ZVN4206V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb = 25C ID 1A Pulsed Drain Current IDM 8A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb = 25C Ptot 2W Continuous Body Diode Current at Tamb = ISD 600 mA 25C Avalanche Current - Repetitive IAR 600 mA Avalanche Energy - Repetitive EAR 15 mJ Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ZVN4206GV ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BVDSS 60 V ID=1mA, VGS=0V Voltage Gate-Source Threshold VGS(th) 1.

Otros transistores... ZVN3306A , ZVN3306F , ZVN3310A , ZVN3310F , ZVN3320A , ZVN3320F , ZVN4106F , ZVN4206A , IRFP260 , ZVN4206G , ZVN4206GV , ZVN4210A , ZVN4210G , ZVN4306A , ZVN4306AV , ZVN4306G , ZVN4306GV .

 

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com