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FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..NDC7001C
NDC7001C ..NTE4153N
NTF2955 ..NX3008PBKW
OM11N55SA ..PMGD370XN
PMGD400UN ..PSMN6R0-25YLB
PSMN6R0-30YL ..RFG50N06
RFG50N06LE ..RJK1536DPE
RJK1536DPN ..RSJ550N10
RSJ650N10 ..SDF4N90JAA
SDF4N90JAB ..SGSP471
SGSP472 ..SML1001R3BN
SML1001R3HN ..SML8075HN
SML8090AN ..SPW16N50C3
SPW17N80C3 ..SSI2N80A
SSI2N90A ..SSM6K403TU
SSM6K404TU ..STB11NK40Z
STB11NK50Z ..STD2HNK60Z-1
STD2N50-1 ..STF21N65M5
STF21N90K5 ..STL16N1VH5
STL16N65M5 ..STP32N05L
STP32N05LFI ..STP8NM60
STP8NM60ND ..STW27NM60ND
STW28NM50N ..TK20A25D
TK20A60T ..TPC8062-H
TPC8063-H ..TPCM8003-H
TPCM8004-H ..UTD351
UTD405 ..ZVP4424A
ZVP4424G ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

FDD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 4.0

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 1.4

Empaquetado / Estuche: TO252_DPAK

Búsqueda de reemplazo de MOSFET FDD5N50

FDD5N50 PDF doc:

1.1. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZF Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous

1.2. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 4 ID Drain Current A -Continuous

1.3. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capability correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3.5 ID Drain Current

1.4. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous (TC = 2

1.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50
FDD5N50
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutationmode. These devices are well suited for high effi- cient switched mode power supplies and active power factor cor- Improved dv/dt capability rection. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3 ID Drain C

Otros transistores... FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , 2SK3562 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , FDD6630A .

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