Todos los MOSFET

Introduzca al menos 3 números o letras
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFB4410
AUIRFB4410Z ..BF245A
BF245B ..BLF6G20S-45
BLF6G21-10G ..BSC077N12NS3G
BSC079N10NSG ..BSV236SP
BSZ019N03LS ..BUK7504-40A
BUK7506-30 ..BUK9575-100A
BUK9575-55A ..BUZ906DP
BUZ906P ..CEF04N7G
CEF05N6 ..CEP6056
CEP6060L ..DMG2302U
DMG3414U ..ECH8601M
ECH8602M ..FDB2572
FDB2614 ..FDD6637_F085
FDD6670A ..FDMC7678
FDMC7680 ..FDP054N10
FDP054N10 ..FDS4488
FDS4501H ..FDZ191P
FDZ192NZ ..FQD19N10
FQD19N10L ..FQPF70N10
FQPF7N60 ..FRS244H
FRS244R ..H4435S
H4946DS ..HAT2051T
HAT2052T ..HUF75321P3
HUF75321S3 ..IPB017N06N3G
IPB019N06L3G ..IPD122N10N3G
IPD127N06LG ..IPI80N03S4L-03
IPI80N03S4L-04 ..IPP80N08S2L-07
IPP80P03P4L-04 ..IRF2805L
IRF2805S ..IRF644
IRF644A ..IRF7451
IRF7452 ..IRF9540
IRF9540N ..IRFH5004
IRFH5006 ..IRFP140A
IRFP140N ..IRFR3505
IRFR3518 ..IRFS821
IRFS822 ..IRFW610A
IRFW614A ..IRLB3036G
IRLB3813 ..IRLU7833
IRLU7843 ..IXFH170N10P
IXFH17N80Q ..IXFK72N20
IXFK73N30 ..IXFQ24N50P2
IXFQ28N60P3 ..IXFX120N20
IXFX120N25 ..IXTA3N110
IXTA3N120 ..IXTH42N20MA
IXTH42N20MB ..IXTP200N055T2
IXTP200N075T ..IXTT1N100
IXTT20N50D ..KF12N60F
KF12N60P ..KMB8D0P30QA
KMB8D2N60QA ..LS4118
LS4119 ..MTB45P03Q8
MTB4D0N03ATH8 ..MTN2N65AI3
MTN2N65FP ..MTP9575L3
MTP9575Q8 ..NTD2955
NTD3055-094 ..NTS4409NT1G
NTTD4401F ..PHW14N50E
PHW20N50E ..PSMN1R6-30PL
PSMN1R7-25YLC ..RF1S9530SM
RF1S9540SM ..RJK03F7DNS
RJK03F8DNS ..RQK0302GGDQA
RQK0302GGDQS ..SDF130JDA-U
SDF13N90 ..SFU9220
SFU9224 ..SMK0465FJ
SMK0765F ..SML601R6GN
SML601R6KN ..SPP04N60S5
SPP04N80C3 ..SSH10N70A
SSH10N80A ..SSM3K7002FU
SSM452 ..SSS4N55
SSS4N60 ..STD12N06L-1
STD12N06LT4 ..STE38N60
STE38NA50 ..STK001SF
STK003SF ..STP20N10LFI
STP20N95K5 ..STP6NA80
STP6NA80FI ..STVHD90
STW10NK60Z ..TK12A60D
TK12A60U ..TPC6113
TPC6130 ..TPCA8A08-H
TPCA8A09-H ..UT3416
UT3418 ..ZVN2106G
ZVN2110A ..ZXMS6005DT8
ZXMS6005SG ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

FDD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 4

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 1.4

Empaquetado / Estuche: TO252_DPAK

Búsqueda de reemplazo de MOSFET FDD5N50

FDD5N50 PDF doc:

1.1. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZF Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous

1.2. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 4 ID Drain Current A -Continuous

1.3. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capability correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3.5 ID Drain Current

1.4. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous (TC = 2

1.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50
FDD5N50
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutationmode. These devices are well suited for high effi- cient switched mode power supplies and active power factor cor- Improved dv/dt capability rection. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3 ID Drain C

Otros transistores... FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , 2SK3562 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , FDD6630A .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com