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FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
 
 
Liste
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..ZVN0545G
ZVN1409A ..ZXMS6004FF
ZXMS6004SG ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

FDD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 4.0

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 1.4

Empaquetado / Estuche: TO252(DPAK)

Búsqueda de reemplazo de MOSFET FDD5N50

FDD5N50 PDF doc:

1.1. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous (TC = 2

1.2. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZF Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous

1.3. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capability correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3.5 ID Drain Current

1.4. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 4 ID Drain Current A -Continuous

1.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50
FDD5N50
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutationmode. These devices are well suited for high effi- cient switched mode power supplies and active power factor cor- Improved dv/dt capability rection. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3 ID Drain C

Otros transistores... FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , 2SK3562 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , FDD6630A .

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