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FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP0503GMT-HF
AP0504GH-HF ..AP2533GY-HF
AP2535GEY-HF ..AP4453GYT-HF
AP4455GEH-HF ..AP73T03GJ-HF
AP73T03GMT-HF ..AP9575GS-HF
AP9576GH ..AP9T18GEH
AP9T18GEJ ..ATP103
ATP104 ..AUIRFSL3004
AUIRFSL3107 ..BF996S
BF996SR ..BLF871
BLF871S ..BSN20
BSN254 ..BUK426-1000B
BUK436W-1000B ..BUK7624-55
BUK7624-55A ..BUK9MHH-65PNN
BUK9MJJ-55PSS ..CEB3205
CEB35P10 ..CEM3138
CEM3172 ..CEU02N7G-1
CEU02N9 ..DMN3033LSN
DMN3051L ..FCA76N60N
FCA76N60N ..FDC3612
FDC3612 ..FDG327NZ
FDG328P ..FDMS6673BZ
FDMS6681Z ..FDP7N50
FDP7N60NZ ..FDS6982
FDS6982AS ..FMD47-06KC5
FMD47-06KC5 ..FQP13N10L
FQP13N50 ..FRE9160R
FRE9260D ..FSL9130D
FSL9130R ..H7N0401LM
H7N0401LS ..HAT2192WP
HAT2193WP ..HUF76137S3S
HUF76139P3 ..IPB160N04S2-03
IPB160N04S2L-03 ..IPD65R380C6
IPD65R380E6 ..IPP08CN10LG
IPP08CN10NG ..IRC244
IRC250 ..IRF430
IRF440 ..IRF6810S
IRF6811S ..IRF7807
IRF7807A ..IRFB3607
IRFB3607G ..IRFI550A
IRFI610A ..IRFP4227
IRFP4229 ..IRFS243
IRFS244A ..IRFSL4410
IRFSL4410Z ..IRFZ44N
IRFZ44NL ..IRLML2060
IRLML2244 ..IXFA10N80P
IXFA110N15T2 ..IXFH6N100
IXFH6N100F ..IXFN150N15
IXFN160N30T ..IXFR90N30
IXFT10N100 ..IXFX66N50Q2
IXFX73N30Q ..IXTF230N085T
IXTF250N075T ..IXTK21N100
IXTK22N100L ..IXTP76N25T
IXTP76P10T ..IXTV270N055T2S
IXTV280N055T ..KF7N80F
KF80N08F ..KP740V
KP741A ..MMBF5458
MMBF5459 ..MTDN3018S6R
MTDN3154C6 ..MTN7000ZA3
MTN7000ZHA3 ..NDF08N60Z
NDF10N60Z ..NTHD3100C
NTHD3101F ..PHB191NQ06LT
PHB20N06T ..PMN40LN
PMN45EN ..PSMN9R0-25YLC
PSMN9R0-30LL ..RFP15P05SM
RFP15P06 ..RJK4006DPD
RJK4006DPP-M0 ..RT1E060XN
RTF015N03 ..SDF9240
SDF9N100GAF-D ..SI2305
SI2312 ..SML1004RKN
SML100A9 ..SMN0470F
SMN04L20D ..SSD20N06-90D
SSD20N10-130D ..SSM3J108TU
SSM3J109TU ..SSM6N05FU
SSM6N09FU ..STB150NF04
STB150NF55 ..STD3LN62K3
STD3N25-1 ..STF3LN62K3
STF3N62K3 ..STL65DN3LLH5
STL65N3LLH5 ..STP3LN62K3
STP3N100 ..STP9NK70ZFP
STP9NK90Z ..STW47NM60ND
STW48NM60N ..TK30J25D
TK30S06K3L ..TPC8105-H
TPC8107 ..TPCP8204
TPCP8205-H ..UTT100N08
UTT100P03 ..ZXMC10A816N8
ZXMC3A16DN8 ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

FDD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 4.0

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 1.4

Empaquetado / Estuche: TO252_DPAK

Búsqueda de reemplazo de MOSFET FDD5N50

FDD5N50 PDF doc:

1.1. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZF Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous

1.2. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 4 ID Drain Current A -Continuous

1.3. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capability correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3.5 ID Drain Current

1.4. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous (TC = 2

1.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50
FDD5N50
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutationmode. These devices are well suited for high effi- cient switched mode power supplies and active power factor cor- Improved dv/dt capability rection. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3 ID Drain C

Otros transistores... FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , 2SK3562 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , FDD6630A .

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