Todos los MOSFET

Introduzca al menos 3 números o letras
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
  FDD5N50
 
FDD5N50
  FDD5N50
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF400N80Z
FCPF600N60Z ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA905P
FDMA908PZ ..FDMS8570SDC
FDMS86101 ..FDPF20N50FT
FDPF20N50T ..FDT86256
FDU3N40 ..FQD17P06
FQD18N20V2 ..FQU11P06
FQU12N20 ..FSF9150D
FSF9150R ..H7N0307AB
H7N0307LD ..HAT2170N
HAT2171H ..HUF76107D3S
HUF76107P3 ..IPB097N08N3G
IPB100N04S2-04 ..IPD50N06S2L-14
IPD50N06S4-09 ..IPP04CN10NG
IPP04N03LBG ..IPW60R190E6
IPW60R199CP ..IRF3707ZS
IRF3708 ..IRF6674
IRF6678 ..IRF7663
IRF7665S2 ..IRF9Z30
IRF9Z32 ..IRFHM830D
IRFHM831 ..IRFP264
IRFP2907 ..IRFR9214
IRFR9220 ..IRFS9622
IRFS9623 ..IRFY9240
IRFY9240C ..IRLI630A
IRLI630G ..IRLZ44NL
IRLZ44NS ..IXFH32N50Q
IXFH340N075T2 ..IXFM13N50
IXFM13N80 ..IXFR30N60P
IXFR32N100P ..IXFX320N17T2
IXFX32N100P ..IXTA90N055T2
IXTA90N075T2 ..IXTH76N25T
IXTH76P10T ..IXTP3N60P
IXTP42N15T ..IXTT96N15P
IXTT96N20P ..KF5N50DZ
KF5N50F ..KP509B9
KP509V9 ..MEM610
MEM614 ..MTC380Q8
MTC4501Q8 ..MTN4410V8
MTN4424Q8 ..NDB7051L
NDB7052 ..NTD5865N
NTD5865NL ..NX3008NBK
NX3008NBKS ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFF60P06
RFF70N06 ..RJK1212DNS
RJK1212DPA ..RSF015N06
RSH065N06 ..SDF220
SDF230JAA ..SFW9510
SFW9520 ..SMK0460F
SMK0460I ..SML601R3CN
SML601R3GN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB6N52K3
STB6NK60Z ..STD60NF55L-1
STD60NF55LA ..STG8205
STG8209 ..STM4433A
STM4435 ..STP21N05LFI
STP21N06L ..STP6NK90Z
STP70L60 ..STT3520C
STT3585 ..STW12N60
STW12NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

FDD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40

Tensión drenaje-fuente (Uds): 500

Tensión compuerta-fuente (Ugs): 30

Corriente continua de drenaje (Id): 4

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 1.4

Empaquetado / Estuche: TO252_DPAK

Búsqueda de reemplazo de MOSFET FDD5N50

FDD5N50 PDF doc:

1.1. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZF Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous

1.2. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 4 ID Drain Current A -Continuous

1.3. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50
FDD5N50
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capability correction. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3.5 ID Drain Current

1.4. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50
FDD5N50
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD5N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous (TC = 2

1.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50
FDD5N50
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutationmode. These devices are well suited for high effi- cient switched mode power supplies and active power factor cor- Improved dv/dt capability rection. RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Continuous (TC = 25oC) 3 ID Drain C

Otros transistores... FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , 2SK3562 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , STT03N20 .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com