FDP3682 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP3682

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 100V

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 32.0

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.036

Empaquetado / Estuche: TO220

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FDP3682 - PDF Hoja de especificaciones para ver o descargar.

1.1. fdb3682_fdp3682.pdf Size:278K _fairchild_semi

- 250 IGSS Gate to Source Leakage Current VGS = �20V - - �100 nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250�A2 - 4 V ID=32A, VGS=10V - 0.032 0.036 rDS(ON) Drain to Source On Resistance ID = 16A, VGS = 6V, - 0.040 0.060 ? ID=32A, VGS=10V, TC=175oC - 0.080 0.090 Dynamic Characteristics CISS Input Capacitance - 1250 - pF VDS = 25V, VGS = 0V, COSS Output Capacitance - 190 - pF f = 1MHz CRSS Reverse Transfer Capacitance - 45 - pF Qg(TOT) Total Gate C

5.1. fdb3652_fdp3652_fdi3652.pdf Size:263K _fairchild_semi

BVDSS Drain to Source Breakdown Voltage ID = 250�A, VGS = 0V 100 - - V VDS = 80V - - 1 IDSS Zero Gate Voltage Drain Current �A VGS = 0V TC= 150oC - - 250 IGSS Gate to Source Leakage Current VGS = �20V - - �100 nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250�A2 - 4 V ID = 61A, VGS = 10V - 0.014 0.016 ID = 30A, VGS = 6V - 0.018 0.026 rDS(ON) Drain to Source On Resistance ? ID = 61A, VGS = 10V, - 0.035 0.043 TJ = 175oC Dynamic Characteristics CISS

5.2. fdb3632_fdp3632_fdi3632_fdh3632.pdf Size:656K _fairchild_semi

ss otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250�A, VGS = 0V 100 - - V VDS = 80V - - 1 IDSS Zero Gate Voltage Drain Current �A VGS = 0V TC= 150oC - - 250 IGSS Gate to Source Leakage Current VGS = �20V - - �100 nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250�A2 - 4 V ID=80A, VGS=10V - 0.0075 0.009 rDS(ON) Drain to Source On Resistance ID =40A, VGS = 6V, - 0.009 0

5.3. fdp3672.pdf Size:237K _fairchild_semi

0.025 0.033 ID = 21A, VGS = 6V, - 0.031 0.055 rDS(ON) Drain to Source On Resistance ? ID = 41A, VGS = 10V, - 0.063 0.070 TC = 175oC Dynamic Characteristics CISS Input Capacitance - 1670 - pF VDS = 25V, VGS = 0V, COSS Output Capacitance - 240 - pF f = 1MHz CRSS Reverse Transfer Capacitance - 55 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 28 37 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 3.9 5 nC VDD = 50V Qgs Gate to Source Gate Charge ID = 41A - 12 - nC Ig = 1.

5.4. fdp3651u.pdf Size:644K _fairchild_semi

y Time - 32 52 ns tf Fall Time - 14 26 ns t(off) Turn-Off Time - - 78 ns Drain-Source Diode Characteristics ISD = 80A - 0.99 1.25 V VSD Source to Drain Diode Forward Voltage ISD = 40A - 0.88 1.0 V trr Reverse Recovery Time - 70 105 ns Is = 40 A, di/dt = 100A/�s Qrr Reverse Recovery Charge - 202 303 nC Notes: 1. Pulse Test:Pulse Width<300us,Duty Cycle<2.0% 2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 ? , Starting TJ=25oC 2 www.fairchildsemi.com FDP3651U Rev. A FDP3651U N-Channel PowerTre

Otros transistores... FDP26N40 , FDP26N40 , FDP2710 , FDP2710_F085 , FDP33N25 , FDP3651U , FDP3651U , FDP3672 , IRFB3306 , FDP3682 , FDP42AN15A0 , FDP51N25 , FDP52N20 , FDP52N20 , FDP5500_F085 , FDP55N06 , FDP5800 .