Todos los MOSFET

Introduzca al menos 3 números o letras
 
FQP5N60C
  FQP5N60C
  FQP5N60C
 
FQP5N60C
  FQP5N60C
  FQP5N60C
 
FQP5N60C
  FQP5N60C
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..NDB6020P
NDB6030 ..NTD4909N
NTD4910N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
PSMN3R5-30LL ..RFD16N05LSM
RFD16N05SM ..RJK0853DPB
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF26N50
SDF2N100JAA ..SGS100MA010D1
SGS150MA010D1 ..SMK1265F
SMK1265FD ..SML60J35
SML60J62 ..SPP20N60C3
SPP20N60CFD ..SSH4N70A
SSH4N80AS ..SSM6J26FE
SSM6J401TU ..SST4118
SST4119 ..STD17N05L-1
STD17N05LT4 ..STF11NM80
STF120NF10 ..STK2NA60
STK3055E ..STP24NF10
STP24NM60N ..STP7NK40Z
STP7NK80Z ..STW15NM60ND
STW160N75F3 ..TK150F04K3
TK150F04K3L ..TPC8031-H
TPC8032-H ..TPCC8103
TPCC8104 ..UT4812Z
UT4822 ..ZVN4424A
ZVN4424G ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

FQP5N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP5N60C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 600

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 4.5

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 2.5

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET FQP5N60C

FQP5N60C PDF doc:

1.1. fqp5n60c_fqpf5n60c.pdf Size:858K _fairchild_semi

FQP5N60C
FQP5N60C
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25C unl

5.1. fqp5n80.pdf Size:660K _fairchild_semi

FQP5N60C
FQP5N60C
September 2000 TM QFET FQP5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.8A, 800V, RDS(on) = 2.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D 3 5 3 5 G TO-220 G D S FQP Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQP5N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25C) 4.8 A - Continuous (TC = 100C) 3.04 A IDM (Note 1) 19.2 A Drain Current - Pulsed VGSS Gat

5.2. fqp5n50c_fqpf5n50c.pdf Size:879K _fairchild_semi

FQP5N60C
FQP5N60C
TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25C unless

Otros transistores... FQP4N80 , FQP4N80 , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP55N10 , FQP5N60C , 2N5485 , FQP65N06 , FQP6N40C , FQP6N40C , FQP6N40CF , FQP6N40CF , FQP6N80C , FQP6N80C , FQP6N90C .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com