FQPF5N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF5N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 900V

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 3.0

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 2.3

Empaquetado / Estuche: TO220F

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FQPF5N90 - PDF Hoja de especificaciones para ver o descargar.

1.1. fqpf5n90.pdf Size:665K _fairchild_semi

Note 4) -- 4.0 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 1200 1550 pF VDS = 25 V, VGS = 0 V, Coss Output Capacitance -- 110 145 pF f = 1.0 MHz Crss Reverse Transfer Capacitance -- 13 17 pF Switching Characteristics td(on) Turn-On Delay Time -- 28 65 ns VDD = 450 V, ID = 5.4 A, tr Turn-On Rise Time -- 65 140 ns RG = 25 ? td(off) Turn-Off Delay Time -- 65 140 ns (Note 4, 5) tf Turn-Off Fall Time -- 50 110 ns Qg Total Gate Charge -- 3

4.1. fqp5n60c_fqpf5n60c.pdf Size:858K _fairchild_semi

125�C -- -- 10 �A IGSSF VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA IGSSR VGS = -30 V, VDS = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA On Characteristics VGS(th) VDS = VGS, ID = 250 �A Gate Threshold Voltage 2.0 -- 4.0 V RDS(on) Static Drain-Source VGS = 10 V, ID = 2.25 A -- 2.0 2.5 ? On-Resistance gFS VDS = 40 V, ID = 2.25 A (Note 4) -- 4.7 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 515 670 pF VDS =

4.2. fqpf5n50cf.pdf Size:657K _fairchild_semi

GSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 �A2.0 -- 4.0 V RDS(on) Static Drain-Source VGS = 10 V, ID = 2.5A -- 1.3 1.55 ? On-Resistance gFS Forward Transconductance VDS = 40 V, ID = 2.5A (Note 4) -- 5.2 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 480 625 pF f = 1.0 MHz Coss

4.3. fqpf5n40.pdf Size:728K _fairchild_semi

1.27 1.6 ? On-Resistance gFS VDS = 50 V, ID = 1.5 A (Note 4) -- 2.8 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 350 460 pF VDS = 25 V, VGS = 0 V, Coss Output Capacitance -- 60 80 pF f = 1.0 MHz Crss Reverse Transfer Capacitance -- 7 9 pF Switching Characteristics td(on) Turn-On Delay Time -- 12 30 ns VDD = 200 V, ID = 4.5 A, tr Turn-On Rise Time -- 60 130 ns RG = 25 ? td(off) Turn

4.4. fqp5n50c_fqpf5n50c.pdf Size:879K _fairchild_semi

10 �A IGSSF VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA IGSSR VGS = -30 V, VDS = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA On Characteristics VGS(th) VDS = VGS, ID = 250 �A Gate Threshold Voltage 2.0 -- 4.0 V RDS(on) Static Drain-Source VGS = 10 V, ID = 2.5A -- 1.14 1.4 ? On-Resistance gFS VDS = 40 V, ID = 2.5A (Note 4) -- 5.2 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 480 625 pF VDS = 25 V, VGS = 0

Otros transistores... FQPF33N10L , FQPF3N80C , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , FQPF5N40 , FQPF5N40 , 3SK40 , FQPF5P20 , FQPF630 , FQPF630 , FQPF65N06 , FQPF6N80C , FQPF6N80C , FQPF6N80T , FQPF6N80T .