2SK3703 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3703

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2

Tensión drenaje-fuente (Uds): 60V

Tensión compuerta-fuente (Ugs): 20

Corriente continua de drenaje (Id): 30

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.02

Empaquetado / Estuche:

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2SK3703 - PDF Hoja de especificaciones para ver o descargar.

1.1. 2sk3703.pdf Size:52K _sanyo

V, f=1MHz 1780 pF Output Capacitance Coss VDS=20V, f=1MHz 266 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns Rise Time tr See specified Test Circuit. 110 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 166 ns Fall Time tf See specified Test Circuit. 144 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=30A 40 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=30A 6.5 nC Gate-to-Drain �Miller� Charge Qgd VDS=

4.1. 2sk370.pdf Size:655K _toshiba

, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ens

4.2. 2sk3700.pdf Size:259K _toshiba

2.0 ? 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ? 2.0 2.5 ? ?Yfs? VDS = 20 V, ID = 3 A 2.0 4.5 ? S Forward transfer admittance Input capacitance Ciss ? 1150 ? Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ? 20 ? pF Coss ? 100 ? Output capacitance 10 V ID = 3 A Rise time tr ? 30 ? VGS VOUT 0 V Turn-ON time ton ? 70 ? RL = 133 ? Switching time ns Fall time tf ? 60 ? VDD?400 V < 1%, tw = 10 ?s Turn-OFF time toff ? 170 ? Dut

4.3. 2sk3702.pdf Size:35K _sanyo

Hz 105 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr See specified Test Circuit. 65 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 75 ns Fall Time tf See specified Test Circuit. 70 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=18A 19 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=18A 2.5 nC Gate-to-Drain �Miller� Charge Qgd VDS=30V, VGS=10V, ID=18A 4.1 nC Diode Forward Voltage VSD IS=18A, VGS=0 0.98 1.2 V Switching Time Test Circuit VDD=30V

4.4. 2sk3708.pdf Size:35K _sanyo

Turn-ON Delay Time td(on) See specified Test Circuit. 29.5 ns Rise Time tr See specified Test Circuit. 65 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 310 ns Fall Time tf See specified Test Circuit. 105 ns Total Gate Charge Qg VDS=50V, VGS=10V, ID=30A 73 nC Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=30A 12.5 nC Gate-to-Drain �Miller� Charge Qgd VDS=50V, VGS=10V, ID=30A 16 nC Diode Forward Voltage VSD IS=30A, VGS=0 0.92 1.2 V Package Dimensions unit : mm 2063A 4.5 10

4.5. 2sk3704.pdf Size:56K _sanyo

20V, f=1MHz 350 pF Turn-ON Delay Time td(on) See specified Test Circuit. 26 ns Rise Time tr See specified Test Circuit. 175 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 265 ns Fall Time tf See specified Test Circuit. 210 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=45A 67 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=45A 10.6 nC Gate-to-Drain �Miller� Charge Qgd VDS=30V, VGS=10V, ID=45A 10 nC Diode Forward Voltage VSD IS=45A, VGS=0 1.0 1.2 V Package Dimensions unit :

4.6. 2sk3707.pdf Size:36K _sanyo

y Time td(on) See specified Test Circuit. 19.5 ns Rise Time tr See specified Test Circuit. 30 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 185 ns Fall Time tf See specified Test Circuit. 60 ns Total Gate Charge Qg VDS=50V, VGS=10V, ID=20A 44 nC Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=20A 7.8 nC Gate-to-Drain �Miller� Charge Qgd VDS=50V, VGS=10V, ID=20A 9.8 nC Diode Forward Voltage VSD IS=20A, VGS=0 0.95 1.2 V Marking : K3707 Package Dimensions unit : mm 2063A 4.5

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