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MMBFJ175L
  MMBFJ175L
  MMBFJ175L
 
MMBFJ175L
  MMBFJ175L
  MMBFJ175L
 
MMBFJ175L
  MMBFJ175L
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTP15N05LFI
MTP15N06L ..NTB6412AN
NTB6413AN ..NTR2101P
NTR4003N ..PHP8ND50E
PHP9NQ20T ..PSMN1R1-25YLC
PSMN1R1-30EL ..RF1S45N06LESM
RF1S45N06SM ..RJK03E0DNS
RJK03E1DNS ..RQJ0305EQDQS
RQJ0306FQDQA ..SDF120NA20HI
SDF120NA20JD ..SFT1445
SFT1446 ..SMK0160IS
SMK0170 ..SML50S30
SML50T47 ..SPI20N60C3
SPI20N60CFD ..SSG4953P
SSG4990N ..SSM3K37FS
SSM3K37MFV ..SSRF50P04-16
SSRF60N10 ..STD11NM60ND
STD120N4F6 ..STE180N10
STE22N80 ..STI30N65M5
STI32N65M5 ..STP19NF20
STP19NM50N ..STP6N25
STP6N25FI ..STV55N05L
STV55N06L ..TK10S04K3L
TK10X40D ..TPC6012
TPC6101 ..TPCA8106
TPCA8107-H ..UT30N03
UT30P03 ..XP152A12COMR
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

MMBFJ175L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBFJ175L

Tipo de FET:

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.06

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0

Empaquetado / Estuche: SOT233

Búsqueda de reemplazo de MOSFET MMBFJ175L

MMBFJ175L PDF doc:

1.1. mmbfj175lt1rev0d.pdf Size:56K _motorola

MMBFJ175L
MMBFJ175L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.2. mmbfj175lt1.pdf Size:105K _onsemi

MMBFJ175L
MMBFJ175L
MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD 3 SOT-23 (TO-236) (Note 1) TA = 25C 225 mW CASE 318 Derate above 25C 1.8 mW/C 1 STYLE 10 2 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6W M G G ELECTRICAL CHARACTERISTICS (TA = 25C unl

2.1. mmbfj175.pdf Size:76K _motorola

MMBFJ175L
MMBFJ175L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

2.2. j174_j175_j176_j177_mmbfj175_mmbfj176_mmbfj177.pdf Size:728K _fairchild_semi

MMBFJ175L
MMBFJ175L
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage - 30 V VGS Gate-Source Voltage 30 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J174 -177

Otros transistores... MGSF2N02EL , MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , IRF640N , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 .

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