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MMBFJ175L
  MMBFJ175L
  MMBFJ175L
 
MMBFJ175L
  MMBFJ175L
  MMBFJ175L
 
MMBFJ175L
  MMBFJ175L
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP02N40K-HF
AP02N40P ..AP2306GN-HF
AP2307GN-HF ..AP4411GM
AP4412GM ..AP6683GYT-HF
AP6800GEO ..AP94T07GP-HF
AP94T07GP1-HF ..AP9976GM
AP9976GP ..APT50M60JN
APT50M85JVFR ..AUIRFP4668
AUIRFP4768 ..BF556C
BF805 ..BLF6G27LS-75
BLF6G27S-45 ..BSC120N03MSG
BSC123N08NS3G ..BSZ12DN20NS3G
BSZ130N03LSG ..BUK7520-55A
BUK7523-75A ..BUK9616-75B
BUK9618-30 ..CEB01N65
CEB01N6G ..CEF740G
CEF80N15 ..CEP85N75
CEP85N75V ..DMG9926UDM
DMG9926USD ..EKV550
EMH1303 ..FDB6030L
FDB6035AL ..FDD8444L_F085
FDD8444_F085 ..FDMC8622
FDMC86240 ..FDP18N20F
FDP18N50 ..FDS6375
FDS6570A ..FK14UM-10
FK14UM-9 ..FQD5N60C
FQD5P10 ..FQT1N60C
FQT1N80 ..FRX130H4
FRX130R1 ..H5N2509PF
H5N2510DL ..HAT2105T
HAT2108R ..HUF75343G3
HUF75343P3 ..IPB048N06LG
IPB049N06L3G ..IPD30N06S2-15
IPD30N06S2-23 ..IPI90R340C3
IPI90R500C3 ..IPU075N03LG
IPU090N03LG ..IRF3315L
IRF3315S ..IRF6629
IRF6631 ..IRF7507
IRF7507(N) ..IRF9643
IRF9910 ..IRFH5306
IRFH5406 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9233
IRFS9240 ..IRFY130C
IRFY140 ..IRLHS6342
IRLHS6376 ..IRLZ14A
IRLZ20 ..IXFH26N50
IXFH26N50P ..IXFL38N100Q2
IXFL39N90 ..IXFR20N120P
IXFR20N80P ..IXFX220N15P
IXFX220N17T2 ..IXTA6N50D2
IXTA6N50P ..IXTH67N10
IXTH67N10MA ..IXTP2R4N50P
IXTP300N04T2 ..IXTT60N20L2
IXTT64N25P ..KF3N50IZ
KF3N60D ..KP501A
KP501B ..MCH6342
MCH6344 ..MTBA5C10Q8
MTBA5N10FP ..MTN3484J3
MTN3484V8 ..NDB6020
NDB6020P ..NTD4906N
NTD4909N ..NUD4700
NUS3116MT ..PMBF4416A
PMBF5484 ..PSMN3R3-40YS
PSMN3R4-30PL ..RFD16N05L
RFD16N05LSM ..RJK0852DPB
RJK0853DPB ..RRQ030P03
RRQ045P03 ..SDF250JAB
SDF26N50 ..SGM3055
SGS100MA010D1 ..SMK1260WF
SMK1265F ..SML60H20
SML60J35 ..SPP18P06PH
SPP20N60C3 ..SSH4N70
SSH4N70A ..SSM6J25FE
SSM6J26FE ..SST4117
SST4118 ..STD17N05L
STD17N05L-1 ..STF11NM60ND
STF11NM80 ..STK2N80
STK2NA60 ..STP23NM60ND
STP24NF10 ..STP7NK30Z
STP7NK40Z ..STW15NK90Z
STW15NM60ND ..TK14A55D
TK150F04K3 ..TPC8030
TPC8031-H ..TPCC8102
TPCC8103 ..UT4812
UT4812Z ..ZVN4310G
ZVN4424A ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

MMBFJ175L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBFJ175L

Tipo de FET:

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.06

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0

Empaquetado / Estuche: SOT233

Búsqueda de reemplazo de MOSFET MMBFJ175L

MMBFJ175L PDF doc:

1.1. mmbfj175lt1rev0d.pdf Size:56K _motorola

MMBFJ175L
MMBFJ175L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.2. mmbfj175lt1.pdf Size:105K _onsemi

MMBFJ175L
MMBFJ175L
MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD 3 SOT-23 (TO-236) (Note 1) TA = 25C 225 mW CASE 318 Derate above 25C 1.8 mW/C 1 STYLE 10 2 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6W M G G ELECTRICAL CHARACTERISTICS (TA = 25C unl

2.1. mmbfj175.pdf Size:76K _motorola

MMBFJ175L
MMBFJ175L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

2.2. j174_j175_j176_j177_mmbfj175_mmbfj176_mmbfj177.pdf Size:728K _fairchild_semi

MMBFJ175L
MMBFJ175L
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage - 30 V VGS Gate-Source Voltage 30 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J174 -177

Otros transistores... MGSF2N02EL , MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , IRF640N , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 .

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