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MMBFJ175L
  MMBFJ175L
  MMBFJ175L
 
MMBFJ175L
  MMBFJ175L
  MMBFJ175L
 
MMBFJ175L
  MMBFJ175L
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB050AN06A0
FDB060AN08A0 ..FDD6778A
FDD6780A ..FDMS3672
FDMS4435BZ ..FDPF2710T
FDPF320N06L ..FDV305N
FDY1002PZ ..FQD30N06
FQD3N60CTM_WS ..FQU5P20
FQU8P10 ..FSL110R
FSL130D ..H7N0307LM
H7N0307LS ..HAT2171N
HAT2172H ..HUF76113T3ST
HUF76121D3 ..IPB100N06S2-05
IPB100N06S2L-05 ..IPD50P03P4L-11
IPD50P04P4L-11 ..IPP057N06N3G
IPP057N08N3G ..IPW60R299CP
IPW65R070C6 ..IRF3709S
IRF3709Z ..IRF6708S2
IRF6709S2 ..IRF7702G
IRF7703G ..IRF9Z34NS
IRF9Z34S ..IRFHS8342
IRFHS9301 ..IRFP330
IRFP3306 ..IRFRC20
IRFS11N50A ..IRFS9633
IRFS9640 ..IRFZ14A
IRFZ15 ..IRLIZ14A
IRLIZ14G ..ISL9N303AP3
ISL9N303AS3 ..IXFH36N55Q2
IXFH36N60P ..IXFM20N60
IXFM21N50 ..IXFR32N80Q3
IXFR34N80 ..IXFX32N80P
IXFX32N80Q3 ..IXTA98N075T7
IXTB30N100L ..IXTH88N15
IXTH88N30P ..IXTP450P2
IXTP460P2 ..IXTU02N50D
IXTU05N100 ..KF5N50FZA
KF5N50IZ ..KP523B
KP7128A ..MGSF1N03L
MGSF1P02 ..MTC4503Q8
MTC4503Q8G ..MTN4N01Q8
MTN4N60AE3 ..NDB7060
NDB7060L ..NTD5807N
NTD5862N ..NX2301P
NX3008CBKS ..PMF280UN
PMF290XN ..PSMN4R5-40PS
PSMN4R6-60PS ..RFD8P06ESM
RFD8P06LE ..RJK1056DPB
RJK1211DNS ..RSE002P03
RSF010P05 ..SDF20N60JEC
SDF20N60JED ..SFU9224
SFU9310 ..SMK0160I
SMK0160IS ..SML50S26
SML50S30 ..SPD03N60S5
SPD04N50C3 ..SSG4463P
SSG4470STM ..SSM3K128TU
SSM3K12T ..SSP7200N
SSP7300N ..STB5N52K3
STB5N62K3 ..STD5NM50-1
STD5NM60 ..STFI20NK50Z
STFW12N120K5 ..STM105N
STM121N ..STP20NM50FD
STP20NM60 ..STP6NA50FI
STP6NA60 ..STT3434N
STT3457P ..STW10NK60Z
STW10NK80Z ..TK13A55DA
TK13A60D ..TPC8018-H
TPC8020-H ..TPCC8064-H
TPCC8065-H ..UT4406
UT4410 ..ZVN4206AV
ZVN4206G ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

MMBFJ175L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBFJ175L

Tipo de FET:

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd):

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.06

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0

Empaquetado / Estuche: SOT233

Búsqueda de reemplazo de MOSFET MMBFJ175L

MMBFJ175L PDF doc:

1.1. mmbfj175lt1rev0d.pdf Size:56K _motorola

MMBFJ175L
MMBFJ175L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.2. mmbfj175lt1.pdf Size:105K _onsemi

MMBFJ175L
MMBFJ175L
MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD 3 SOT-23 (TO-236) (Note 1) TA = 25C 225 mW CASE 318 Derate above 25C 1.8 mW/C 1 STYLE 10 2 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6W M G G ELECTRICAL CHARACTERISTICS (TA = 25C unl

2.1. mmbfj175.pdf Size:76K _motorola

MMBFJ175L
MMBFJ175L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

2.2. j174_j175_j176_j177_mmbfj175_mmbfj176_mmbfj177.pdf Size:728K _fairchild_semi

MMBFJ175L
MMBFJ175L
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage - 30 V VGS Gate-Source Voltage 30 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J174 -177

Otros transistores... MGSF2N02EL , MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , IRF640N , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 .

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