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BSP250
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BSP250
  BSP250
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BSP250
  BSP250
 
 
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10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB070AN06A0
FDB075N15A ..FDD7N20TM
FDD7N25LZ ..FDMS7620S
FDMS7650 ..FDQ7238AS
FDR4410 ..FK10SM-9
FK10UM-10 ..FQI13N50C
FQI27N25 ..FRE160R
FRE260D ..FSL230D
FSL230R ..H7N0308LS
H7N0310LD ..HAT2174H
HAT2174N ..HUF76121P3
HUF76121S3S ..IPB100P03P3L-04
IPB107N20N3G ..IPD600N25N3G
IPD60R1K4C6 ..IPP065N03LG
IPP065N04NG ..IPW65R660CFD
IPW90R120C3 ..IRF3710
IRF3710L ..IRF6713S
IRF6714M ..IRF7705G
IRF7706 ..IRFB23N20D
IRFB260N ..IRFI3205
IRFI3710 ..IRFP340
IRFP340A ..IRFS133
IRFS140 ..IRFS9N60A
IRFSL11N50A ..IRFZ22FI
IRFZ24 ..IRLIZ34A
IRLIZ34G ..ITF86130SK8T
ITF86172SK8T ..IXFH40N50Q
IXFH40N50Q2 ..IXFM42N20
IXFM50N20 ..IXFR40N50Q2
IXFR40N90P ..IXFX38N80Q2
IXFX40N90P ..IXTC13N50
IXTC160N10T ..IXTH96N20P
IXTH96N25T ..IXTP4N80P
IXTP50N085T ..IXTU2N80P
IXTU4N60P ..KF5N53F
KF5N53FS ..KP723A
KP723AM ..MKE11R600DCGFC
MLD1N06CL ..MTC5806Q8
MTC8402S6R ..MTN4N60I3
MTN4N60J3 ..NDB710A
NDC631N ..NTD6414AN
NTD6415AN ..NX3008NBKT
NX3008NBKV ..PMF780SN
PMFPB6532UP ..PSMN5R0-80PS
PSMN5R5-60YS ..RFG30P05
RFG30P06 ..RJK1525DPE
RJK1525DPF ..RSH070N05
RSH070P05 ..SDF230JAB
SDF230JDA ..SFW9530
SFW9540 ..SMK0270D
SMK0270F ..SML601R3AN
SML601R3BN ..SPD04P10PG
SPD04P10PLG ..SSG4499P
SSG4501 ..SSM3K15AFS
SSM3K15AFU ..SSP7431P
SSP7432N ..STB60NF06L
STB60NF10 ..STD60NF3LL
STD60NF55L ..STFW6N120K3
STG2454 ..STM4410A
STM4432 ..STP210N75F6
STP21N05L ..STP6NK50Z
STP6NK60Z ..STT3471P
STT3490N ..STW120NF10
STW12N120K5 ..TK13H90A1
TK13J65U ..TPC8025
TPC8026 ..TPCC8073
TPCC8074 ..UT4430
UT4435 ..ZVN4306A
ZVN4306AV ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BSP250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSP250

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 5

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id):

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.25

Empaquetado / Estuche: SC73

Búsqueda de reemplazo de MOSFET BSP250

BSP250 PDF doc:

1.1. bsp250.pdf Size:93K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSP250 vertical D-MOS transistor FEATURES PINNING - SOT223 High-speed switching PIN SYMBOL DESCRIPTION No secondary breakdown 1 g gate Very low on-resistance. 2 d drain 3 s source APPLICATIONS 4 d drain Low-loss motor and actuator drivers Power switching. DESCRIPTION handbook, halfpage 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION 1 2 3 The device is supplied in an antistatic package. s Top view The gate-source input must be protected against static MAM121 discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source

5.1. bsp254_bsp254a_cnv_2.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP254; BSP254A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT etc. VDS drain-source - - -250 V High-speed switching voltage No secondary breakdown. VGSO gate-source open drain - - 20 V voltage ? Yfs? forward transfer ID = -200 mA; 100 200 - mS DESCRIPTION admittance VDS = -25V P-channel vertical D-MOS transistor ID drain current (DC) - - -0.2 A in a TO-92 variant envelope and RDS(on) drain-source VGS = -10 V; - 10 15 ? intended for use as a line current on-state resistance ID = -200 mA interruptor in relay, high-speed and line transformer drivers. Ptot total power Tamb =25 C - - 1 W dissipation PINNING - TO-

5.2. bsp255.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP255 P-channel enhancement mode vertical D-MOS transistor 1996 Aug 05 Product specification Supersedes data of 1996 Jun 13 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel enhancement mode BSP255 vertical D-MOS transistor FEATURES PINNING - SOT223 Direct interface to C-MOS, TTL etc PIN SYMBOL DESCRIPTION Low threshold voltage 1 g gate High speed switching 2 d drain No secondary breakdown. 3 s source 4 d drain APPLICATIONS Line current interrupter in telephone sets Relay, high speed and line transformer drivers. handbook, halfpage 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor g in a 4-pin plastic SOT223 SMD package. 1 2 3 s CAUTION Top view MAM121 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUI

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