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BSP250
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BSP250
  BSP250
  BSP250
 
BSP250
  BSP250
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7316Q
AUIRF7319Q ..BF1105R
BF1105WR ..BLF548
BLF571 ..BSC022N03SG
BSC024NE2LS ..BSS138PW
BSS138W ..BUK663R5-55C
BUK663R7-75C ..BUK9506-55B
BUK9506-75B ..BUZ72A
BUZ73AH ..CED4311
CED540L ..CEP1186
CEP1195 ..CPH6442
CPH6443 ..DMP3020LSS
DMP3025LK3 ..FDA59N30
FDA69N25 ..FDD3680
FDD3682_F085 ..FDMA7672
FDMB3800N ..FDN308P
FDN327N ..FDR8305N
FDR8308P ..FDS9958
FDS9958_F085 ..FQB50N06L
FQB55N10 ..FQPF19N20
FQPF19N20C ..FRM430H
FRM430R ..H02N60SJ
H02N65E ..HAT1108C
HAT1110R ..HITK0203MP
HITK0204MP ..IPA60R160C6
IPA60R165CP ..IPB80N06S4-07
IPB80N06S4L-05 ..IPI45N06S4-09
IPI45N06S4L-08 ..IPP65R380E6
IPP65R600C6 ..IRF1404L
IRF1404S ..IRF6218
IRF6218S ..IRF7379
IRF7379I ..IRF8910G
IRF8915 ..IRFE110
IRFE120 ..IRFM250
IRFM340 ..IRFR111
IRFR120 ..IRFS620
IRFS620A ..IRFU4105
IRFU4105Z ..IRL521
IRL530 ..IRLSZ34A
IRLSZ44A ..IXFH12N100
IXFH12N100F ..IXFK33N50
IXFK34N80 ..IXFN80N50Q2
IXFN80N50Q3 ..IXFV12N120PS
IXFV12N80P ..IXTA1R4N120P
IXTA1R6N100D2 ..IXTH280N055T
IXTH28N50Q ..IXTP120N075T2
IXTP120P065T ..IXTQ75N10P
IXTQ76N25T ..J201
J202 ..KMB035N40DC
KMB050N60P ..KTK920BU
KTK920T ..MTB14P03Q8
MTB15P04J3 ..MTN15N50FP
MTN1634V8 ..MTP3N50E
MTP3N60 ..NDT452AP
NDT452P ..NTMS4800N
NTMS4801N ..PHP33N10
PHP33NQ20T ..PSMN026-80YS
PSMN027-100PS ..RD12MVP1
RD15HVF1 ..RJK0358DPA
RJK0358DSP ..RQ1C065UN
RQ1C075UN ..SDF044JAB-U
SDF054JAA-D ..SFR9214
SFR9220 ..SMG2339P
SMG2340N ..SML5040CN
SML5050AN ..SPD08N50C3
SPD08P06PG ..SSG4512CE
SSG4520H ..SSM3K15FV
SSM3K15TE ..SSP7460N
SSP7461P ..STB80NF55-08T4
STB80NF55L-06 ..STD8N06-1
STD8N06T4 ..STH85N15F4-2
STH8N80 ..STP15NM60ND
STP15NM65N ..STP5NA80
STP5NA80FI ..STU75N3LLH6
STU75N3LLH6-S ..TIS73
TIS74 ..TK8A45D
TK8A45DA ..TPCA8051-H
TPCA8052-H ..UT100N03-Q
UT108N03 ..WTC9435
WTD40N03 ..ZXMP10A18K
ZXMP2120E5 ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BSP250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSP250

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 5

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id):

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.25

Empaquetado / Estuche: SC73

Búsqueda de reemplazo de MOSFET BSP250

BSP250 PDF doc:

1.1. bsp250.pdf Size:93K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSP250 vertical D-MOS transistor FEATURES PINNING - SOT223 High-speed switching PIN SYMBOL DESCRIPTION No secondary breakdown 1 g gate Very low on-resistance. 2 d drain 3 s source APPLICATIONS 4 d drain Low-loss motor and actuator drivers Power switching. DESCRIPTION handbook, halfpage 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION 1 2 3 The device is supplied in an antistatic package. s Top view The gate-source input must be protected against static MAM121 discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source

5.1. bsp254_bsp254a_cnv_2.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP254; BSP254A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT etc. VDS drain-source - - -250 V High-speed switching voltage No secondary breakdown. VGSO gate-source open drain - - 20 V voltage ? Yfs? forward transfer ID = -200 mA; 100 200 - mS DESCRIPTION admittance VDS = -25V P-channel vertical D-MOS transistor ID drain current (DC) - - -0.2 A in a TO-92 variant envelope and RDS(on) drain-source VGS = -10 V; - 10 15 ? intended for use as a line current on-state resistance ID = -200 mA interruptor in relay, high-speed and line transformer drivers. Ptot total power Tamb =25 C - - 1 W dissipation PINNING - TO-

5.2. bsp255.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP255 P-channel enhancement mode vertical D-MOS transistor 1996 Aug 05 Product specification Supersedes data of 1996 Jun 13 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel enhancement mode BSP255 vertical D-MOS transistor FEATURES PINNING - SOT223 Direct interface to C-MOS, TTL etc PIN SYMBOL DESCRIPTION Low threshold voltage 1 g gate High speed switching 2 d drain No secondary breakdown. 3 s source 4 d drain APPLICATIONS Line current interrupter in telephone sets Relay, high speed and line transformer drivers. handbook, halfpage 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor g in a 4-pin plastic SOT223 SMD package. 1 2 3 s CAUTION Top view MAM121 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUI

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