Todos los MOSFET

Introduzca al menos 3 números o letras
 
BSP250
  BSP250
  BSP250
 
BSP250
  BSP250
  BSP250
 
BSP250
  BSP250
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB35N06ZL
MTB50P03HDL ..NTB35N15
NTB45N06 ..NTP5404N
NTP5863N ..PHP69N03LT
PHP6N10E ..PSMN063-150D
PSMN069-100YS ..RF1K49221
RF1K49223 ..RJK0396DPA
RJK0397DPA ..RQJ0201UGDQA
RQJ0202VGDQA ..SDF11N90GAF
SDF120JAA-D ..SFS9Z24
SFS9Z34 ..SMG3401
SMG3402 ..SML50H19
SML50H24 ..SPI08N80C3
SPI11N60C3 ..SSG4910N
SSG4920N ..SSM3K320T
SSM3K329R ..SSQ5N50
SSQ6N60 ..STD10N10L-1
STD10N10LT4 ..STD95N4F3
STD95N4LF3 ..STI18NM60N
STI200N6F3 ..STP18N10
STP18N10FI ..STP60N55F3
STP60NF03L ..STV33N10
STV36N06 ..TJ80S04M3L
TJ8S06M3L ..TPC6001
TPC6003 ..TPCA8080
TPCA8081 ..UT2311
UT2312 ..WTL2602
WTL2622 ..ZXMP4A57E6
ZXMP6A13F ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BSP250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSP250

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 5

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id):

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.25

Empaquetado / Estuche: SC73

Búsqueda de reemplazo de MOSFET BSP250

BSP250 PDF doc:

1.1. bsp250.pdf Size:93K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSP250 vertical D-MOS transistor FEATURES PINNING - SOT223 High-speed switching PIN SYMBOL DESCRIPTION No secondary breakdown 1 g gate Very low on-resistance. 2 d drain 3 s source APPLICATIONS 4 d drain Low-loss motor and actuator drivers Power switching. DESCRIPTION handbook, halfpage 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION 1 2 3 The device is supplied in an antistatic package. s Top view The gate-source input must be protected against static MAM121 discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source

5.1. bsp254_bsp254a_cnv_2.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP254; BSP254A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT etc. VDS drain-source - - -250 V High-speed switching voltage No secondary breakdown. VGSO gate-source open drain - - 20 V voltage ? Yfs? forward transfer ID = -200 mA; 100 200 - mS DESCRIPTION admittance VDS = -25V P-channel vertical D-MOS transistor ID drain current (DC) - - -0.2 A in a TO-92 variant envelope and RDS(on) drain-source VGS = -10 V; - 10 15 ? intended for use as a line current on-state resistance ID = -200 mA interruptor in relay, high-speed and line transformer drivers. Ptot total power Tamb =25 C - - 1 W dissipation PINNING - TO-

5.2. bsp255.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP255 P-channel enhancement mode vertical D-MOS transistor 1996 Aug 05 Product specification Supersedes data of 1996 Jun 13 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel enhancement mode BSP255 vertical D-MOS transistor FEATURES PINNING - SOT223 Direct interface to C-MOS, TTL etc PIN SYMBOL DESCRIPTION Low threshold voltage 1 g gate High speed switching 2 d drain No secondary breakdown. 3 s source 4 d drain APPLICATIONS Line current interrupter in telephone sets Relay, high speed and line transformer drivers. handbook, halfpage 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor g in a 4-pin plastic SOT223 SMD package. 1 2 3 s CAUTION Top view MAM121 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUI

Otros transistores... BSP100 , BSP110 , BSP122 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , IRF460 , BSP89 , BSS138BK , BSS138BKW , BSS138P , BSS138PS , BSS138PW , BSS192 , BSS83 .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com