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BSP250
  BSP250
  BSP250
 
BSP250
  BSP250
  BSP250
 
BSP250
  BSP250
 
 
Liste
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

BSP250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSP250

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 5

Tensión drenaje-fuente (Uds): 30

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id):

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF:

Resistencia drenaje-fuente RDS (on), Ohm: 0.25

Empaquetado / Estuche: SC73

Búsqueda de reemplazo de MOSFET BSP250

BSP250 PDF doc:

1.1. bsp250.pdf Size:93K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSP250 vertical D-MOS transistor FEATURES PINNING - SOT223 High-speed switching PIN SYMBOL DESCRIPTION No secondary breakdown 1 g gate Very low on-resistance. 2 d drain 3 s source APPLICATIONS 4 d drain Low-loss motor and actuator drivers Power switching. DESCRIPTION handbook, halfpage 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION 1 2 3 The device is supplied in an antistatic package. s Top view The gate-source input must be protected against static MAM121 discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source

5.1. bsp254_bsp254a_cnv_2.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP254; BSP254A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT etc. VDS drain-source - - -250 V High-speed switching voltage No secondary breakdown. VGSO gate-source open drain - - 20 V voltage ? Yfs? forward transfer ID = -200 mA; 100 200 - mS DESCRIPTION admittance VDS = -25V P-channel vertical D-MOS transistor ID drain current (DC) - - -0.2 A in a TO-92 variant envelope and RDS(on) drain-source VGS = -10 V; - 10 15 ? intended for use as a line current on-state resistance ID = -200 mA interruptor in relay, high-speed and line transformer drivers. Ptot total power Tamb =25 C - - 1 W dissipation PINNING - TO-

5.2. bsp255.pdf Size:65K _philips

BSP250
BSP250
DISCRETE SEMICONDUCTORS DATA SHEET BSP255 P-channel enhancement mode vertical D-MOS transistor 1996 Aug 05 Product specification Supersedes data of 1996 Jun 13 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel enhancement mode BSP255 vertical D-MOS transistor FEATURES PINNING - SOT223 Direct interface to C-MOS, TTL etc PIN SYMBOL DESCRIPTION Low threshold voltage 1 g gate High speed switching 2 d drain No secondary breakdown. 3 s source 4 d drain APPLICATIONS Line current interrupter in telephone sets Relay, high speed and line transformer drivers. handbook, halfpage 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor g in a 4-pin plastic SOT223 SMD package. 1 2 3 s CAUTION Top view MAM121 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUI

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