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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SC49N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC49N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8

Tensión colector-base (Ucb): 120

Tensión colector-emisor (Uce): 70

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.3

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80

Capacitancia de salida (Cc), pF: 20

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO5

Búsqueda de reemplazo de transistor bipolar 2SC49N

2SC49N PDF doc:

5.1. 2sc4915.pdf Size:319K _toshiba

2SC49N
2SC49N
2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C JEDEC ? Storage temperature range Tstg -55~125 C JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 A ? ? 0.1 A Emitter cut-off current IEBO VEB = 4 V, IC = 0 A ? ? 0.5 A hFE DC current gain VCE = 6 V, IC = 1 mA 40 ? 200 (Note) Reverse transfer capacitance Cre V

5.2. 2sc4944.pdf Size:217K _toshiba

2SC49N
2SC49N
2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1873 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA PC JEDEC ? Collector power dissipation 200 mW (Note 1) JEITA ? Junction temperature Tj 125 C TOSHIBA 2-2L1A Storage temperature range Tstg -55~125 C Weight: 6.2 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease

5.3. 2sc4935.pdf Size:176K _toshiba

2SC49N
2SC49N

5.4. 2sc4923.pdf Size:79K _sanyo

2SC49N
2SC49N

5.5. 2sc4920.pdf Size:60K _sanyo

2SC49N
2SC49N
Ordering number:EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=4.7k? , R2=4.7k? ). 2106A Very small-sized package permitting 2SC4920- [2SC4920] applied sets to be made smaller and slimmer. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collect

5.6. 2sc4910.pdf Size:93K _sanyo

2SC49N
2SC49N
Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 38 V Collector-to-Emitter Voltage VCEO 18 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 0.75 A Collector Current (Pulse) ICP 1.2 A Base Current IB 150 mA Collector Dissipation PC 1.5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=30V, IE=0 50 A Emitter Cutoff Current IEBO VEB=2V, IC=0 50 A DC Current Gain hFE VCE=10V, IC=200mA 20 200 Collector-to-Base Breakdown Volt

5.7. 2sc4983.pdf Size:144K _sanyo

2SC49N
2SC49N
Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers and LED drivers. 2018B [2SA1881/2SC4983] Features Large current capacity. Low collector-to-emitter saturation voltage. Very small-sized pakage permitting 2SA1881/ 2SC4983-appied set to be made smaller and slimmer. 1 : Base 2 : Emitter 3 : Collector ( ) : 2SA1881 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()15 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()1 A Collector Current (Pulse) ICP ()3 A Base Current IB ()200 mA Collector Dissipation PC 250 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta =

5.8. 2sc4924.pdf Size:78K _sanyo

2SC49N
2SC49N

5.9. 2sc4976.pdf Size:31K _sanyo

2SC49N
2SC49N
Ordering number : ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO?200V(min). 2045B Large current capacitance. [2SA1875 / 2SC4976] Small reverse transfer capacitance and excellent high 6.5 2.3 5.0 -frequency characteristic : 0.5 4 Cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SA1875 / 2SC4976] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's contro

5.10. 2sc4984.pdf Size:48K _sanyo

2SC49N
2SC49N
Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions Low-frequency power amplifier applications. unit:mm Medium-speed switching. 2038A Small-sized motor drivers. [2SA1882/2SC4984] 4.5 1.5 1.6 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.4 0.5 3 2 1 0.4 1.5 3.0 0.75 1 : Base 2 : Collector Specifications 3 : Emitter SANYO : PCP ( ) : 2SA1882 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()15 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()1.5 A Collector Current (Pulse) ICP ()3 A Base Current IB ()300 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Chara

5.11. 2sc4919.pdf Size:99K _sanyo

2SC49N
2SC49N
Ordering number:EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SC4919- unit:mm applied sets to be made smaller and slimmer. 2106A Small output capacitance. [2SC4909] Low collector-to-emitter saturation voltage. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=15V, I

5.12. 2sc4909.pdf Size:61K _sanyo

2SC49N
2SC49N
Ordering number:EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=47k? , R2=47k? ). 2059B Very small-sized package permitting 2SC4909- [2SC4909] applied sets to be made smaller and slimmer. 0.3 0.15 Small ON resistance. 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cu

5.13. 2sc4987.pdf Size:109K _sanyo

2SC49N
2SC49N
Ordering number:EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit:mm Low collector saturation voltage. 2106A High gain-bandwidth product. [2SC4987] Small collector capacitance. 0.75 0.3 0.6 Very small-sized package permitting 2SC4987- applied sets to be made small and slim. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCES 40 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Current (Pulse) ICP 500 mA Base Current IB 40 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Con

5.14. 2sc4921.pdf Size:60K _sanyo

2SC49N
2SC49N
Ordering number:EN4767 NPN Epitaxial Planar Silicon Transistor 2SC4921 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=10k? , R2=10k? ). 2106A Very small-sized package permitting 2SC4921- [2SC4921] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector

5.15. 2sc4922.pdf Size:60K _sanyo

2SC49N
2SC49N
Ordering number:EN4768 NPN Epitaxial Planar Silicon Transistor 2SC4922 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=47k? , R2=47k? ). 2106A Very small-sized package permitting 2SC4922- [2SC4922] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector

5.16. 2sc4931.pdf Size:122K _sanyo

2SC49N
2SC49N
Ordering number:EN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2106A High cutoff frequency : fT=9.0GHz typ. [2SC4931] Very small-sized package permitting 2SC4931- 0.75 0.3 0.6 applied sets to be made small and slim. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 50 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A

5.17. 2sc4957.pdf Size:43K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4957-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 5? 5? 2SC4957-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. 5? 5? * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) 1. Collector Collector to Base Voltage VCBO 9V 2. Emitter 3. Base Collector to Emitter Voltage VCEO 6V 4. Emitter Emitter to Base Voltage VEBO 2V Collector Current IC

5.18. 2sc4959.pdf Size:53K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.4 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2SC4959T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora- tion side of the tape. Marking Embossed tape 8 mm wide. 2SC4959T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter 2. Base 3. Collector Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 150 mW J

5.19. 2sc4942.pdf Size:115K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm) voltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Complementary transistor with the 2SA1871 QUALITY GRADES Standard Please refer to Quality Grades on NEC Semiconductor Electrode connection Devices (Document No. C11531E) published by NEC 1. Emitter Corporation to know the specification of quality grade on the 2. Collector devices and its recommended applications. 3. Base ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 600 V 600 Collector to emitter voltage VCEO V 7.0 Emitter to b

5.20. 2sc4958.pdf Size:46K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.3 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2SC4958T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora- tion side of the tape. Marking Embossed tape 8 mm wide. 2SC4958T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4958) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PIN CONNECTIONS 1. Emitter Collector to Base Voltage VCBO 9V 2. Base 3. Collector Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 10 mA Total Power Dissipation PT 60 mW Jun

5.21. 2sc4954.pdf Size:48K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance 2.80.2 +0.1 Cre = 0.3 pF TYP. 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4954-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4954-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Marking Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954) ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V PIN CONNECTIONS Emitter to Base Voltage VEBO 2V 1. Emitter 2. Base Collector Current IC 10 mA 3. Collector Total Power Dissipation

5.22. 2sc4956.pdf Size:48K _nec

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2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.20 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4956-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 5? 5? 2SC4956-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perfora- tion side of the tape. 5? 5? * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) 1. Collector Collector to Base Voltage VCBO 9V 2. Emitter 3. Base Collector to Emitter Voltage VCEO 6V 4. Emitter Emitter to Base Voltage VEBO 2V Collector Current

5.23. 2sc4955.pdf Size:44K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance 2.80.2 Cre = 0.4 pF TYP. +0.1 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4955-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4955-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Marking Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4955) ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) PIN CONNECTIONS Collector to Base Voltage VCBO 9V 1. Emitter Collector to Emitter Voltage VCEO 6V 2. Base Emitter to Base Voltage VEBO 2V 3. Collector Collector Current IC 30 mA Total Power Dissipation PT 180 mW

5.24. 2sc4997.pdf Size:51K _rohm

2SC49N
2SC49N
2SC4997 / 2SC4998 Transistors High-frequency Amplifier Transistor, RF switching (10V, 0.1A) 2SC4997 / 2SC4998 Features External dimensions (Units : mm) 1) High transition frequency. (fT=240MHz) 2) High hFE. 2SC4997 (1) (2) (3) 0.8 Absolute maximum ratings (Ta=25C) 1.6 Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V 0.1Min. Collector-emitter voltage VCEO 10 V ( ) (1) Emitter Source Emitter-base voltage VEBO 5 V ( ) ROHM : EMT3 (2) Base Gate Collector current IC 0.1 A ( ) EIAJ : SC-75A (3) Collector Drain 2SC4997 0.15 Collector power PC W dissipation 2SC4998 0.2 Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C 2SC4998 Packaging specifications and hFE 1.25 Type 2SC4997 2SC4998 2.1 Package EMT3 UMT3 hFE 560~2700 560~2700 Marking CB CB Code TL T106 0.1to0.4 ( ) (1) Emitter Source Basic ordering unit (pieces) 3000 3000 ( ) ROHM : UMT3 (2) Base Gate Each lead has same dimensions EIAJ : SC-70 (3) Collector(Drain

5.25. 2sc4937.pdf Size:45K _rohm

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2SC49N

5.26. 2sc4938.pdf Size:52K _rohm

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2SC49N
2SC4938 Transistors High-voltage Switching Transistor (400V, 5A) 2SC4938 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.6V at IC / IB=5/1A) 13.1 3.2 2) Fast switching. (tf :Max.1s at IC=4A) 3) Wide SOA. (safe operating area) 8.8 (1) Base (2) Collector (3) Emitter ROHM : PSD3 0.5Min. EIAJ : SC-83A Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 5 A Collector current ICP 7 A ? 1.5 W PC Collector power dissipation 35 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single pulse, Pw=100ms. ? Packaging specifications and hFE Type 2SC4938 Package PSD3 hFE B Code TL Basic ordering unit (pieces) 1000 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 - - V IC=50A Collector-emitter breakdown voltage BV

5.27. 2sc4960.pdf Size:58K _panasonic

2SC49N
2SC49N
Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE ? 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25?C) 1.1 0.1 0.6 0.2 Parameter Symbol Ratings Unit Collector to 2SC4960 900 5.45 0.3 VCBO V 10.9 0.5 base voltage 2SC4960A 900 1 2 3 Collector to emitter voltage VCES 900 V Collector to 2SC4960 800 VCEO V 1:Base emitter voltage 2SC4960A 900 2:Collector 3:Emitter Emitter to base voltage VEBO 7 V TOP3 Full Pack Package(a) Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A Collector power TC=25 C 40 PC W dissipation Ta=25 C 3 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C

5.28. 2sc4968.pdf Size:37K _panasonic

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2SC49N
Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V 1 2 3 1:Base Collector current IC 80 mA 2:Emitter 3:Collector Collector power dissipation PC 600 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 2V, IC = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 15 V Collector to emitter voltage VCEO IC = 100 A, IB = 0 10 V Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 15

5.29. 2sc4968_e.pdf Size:41K _panasonic

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2SC49N
Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V 1 2 3 1:Base Collector current IC 80 mA 2:Emitter 3:Collector Collector power dissipation PC 600 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 2V, IC = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 15 V Collector to emitter voltage VCEO IC = 100 A, IB = 0 10 V Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 15

5.30. 2sc4985.pdf Size:40K _panasonic

2SC49N
2SC49N
Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5 0.2 4.5 0.2 Features 90 High collector to base voltage VCBO 0.65 0.1 0.85 0.1 High collector to emitter VCEO Allowing automatic insertion with radial taping 1.0 0.1 0.8C 0.8C 0.7 0.1 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V 0.5 0.1 0.4 0.1 Collector to emitter voltage VCEO 800 V 2.05 0.2 2.5 0.2 2.5 0.2 0.8C Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A 1:Emitter 1 2 3 Collector current IC 1 A 2:Collector 3:Base Collector power dissipation PC 1.5 W MT3 Type Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 900V, IE = 0 50 A Emitter cutoff current IEBO VEB = 7V, IC = 0 50 A Coll

5.31. 2sc4953.pdf Size:42K _panasonic

2SC49N
2SC49N
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings (TC=25?C) 0.8 0.1 0.55 0.15 Parameter Symbol Ratings Unit 2.54 0.3 Collector to base voltage VCBO 500 V 1 2 3 5.08 0.5 VCES 500 V Collector to emitter voltage VCEO 400 V 1:Base Emitter to base voltage VEBO 7 V 2:Collector 3:Emitter Peak collector current ICP 6 A TO220D Full Pack Package Collector current IC 3 A Base current IB 1.2 A Collector power TC=25 C 30 PC W dissipation Ta=25 C 2.0 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Condition

5.32. 2sc4913.pdf Size:40K _hitachi

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2SC49N
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

5.33. 2sc4995.pdf Size:65K _hitachi

2SC49N
2SC49N
2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4995 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltge Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 2

5.34. 2sc4901.pdf Size:46K _hitachi

2SC49N
2SC49N
2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4901 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 9 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA Collector output c

5.35. 2sc4993.pdf Size:65K _hitachi

2SC49N
2SC49N
2SC4993 Silicon NPN Epitaxial ADE-208-011 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10.5 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC4993 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current ICBO 10 A VCB = 15 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 10 mA Collector output capacitance Cob 0.45 0.8 pF V

5.36. 2sc4965.pdf Size:14K _hitachi

2SC49N
2SC49N
2SC4965 Silicon NPN Epitaxial ADE-208-006 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline 2SC4965 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector current IC 100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 12 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 10 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 3 V, IC = 0 DC current transfer ratio hFE 100 250 600 VCE = 5 V, IC = 5 mA Collector to emitter saturation VCE(sat) 150 300 mV IC = 80 mA, IB = 5 mA voltage Collector output

5.37. 2sc4928.pdf Size:20K _hitachi

2SC49N
2SC49N
2SC4928 Silicon NPN Triple Diffused Application TO3PL Character Display Horizontal Deflection Output Features High speed switching time: 0.5 s max High breakdown voltage, high current: VCBO = 1500 V, IC = 15 A Suitable for large size CRT Display 1 1. Base 2 2. Collector 3 3. Emitter Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 6V Collector current IC 15 A Collector surge current ic(surge) 20 A Collector power dissipation PC*1 150 W Junction temperature Tj 150 C Storage temperatu

5.38. 2sc4900.pdf Size:47K _hitachi

2SC49N
2SC49N
2SC4900 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 9 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA Co

5.39. 2sc4964.pdf Size:35K _hitachi

2SC49N
2SC49N
2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4964 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 3V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 12 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 1 A VCB = 10 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 3 V, IC = 0 DC current transfer ratio hFE 100 250 600 VCE = 5 V, IC = 5 mA Collector to emitter saturation VCE(sat) 200 300

5.40. 2sc4994.pdf Size:65K _hitachi

2SC49N
2SC49N
2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10.5 GHz Typ High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4994 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current ICBO 10 A VCB = 15 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 10 mA Collector output capacitance Cob 0.4 0.75 pF

5.41. 2sc4926.pdf Size:47K _hitachi

2SC49N
2SC49N
2SC4926 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4926 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA C

5.42. 2sc4988.pdf Size:47K _hitachi

2SC49N
2SC49N
2SC4988 Silicon NPN Epitaxial ADE-208-004 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 8.5 GHz Typ High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4988 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 100 mA Collector power dissipation PC 800*1 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 1 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 9 V, RBE =

5.43. 2sc4927.pdf Size:34K _hitachi

2SC49N
2SC49N
2SC4927 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High breakdown voltage VCES = 1500 V Built-in damper diode type Isolated package TO-3PFM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC4927 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6V Collector current IC 8A Collector peak current IC(peak) 9A Collector surge current IC(surge) 18 A Collector power dissipation PC*1 50 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C C to E diode forward current ID 8A Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown V(BR)EBO 6 V IE = 500 mA, IC = 0 voltage Collector cutoff current ICES 500 A VCE = 1500 V, RBE = 0 DC current transfer ratio hFE 25 VCE = 5 V, IC = 1 A

5.44. 2sc4989.pdf Size:134K _mitsubishi

2SC49N
2SC49N

5.45. 2sc4916.pdf Size:100K _no

2SC49N
2SC49N

5.46. 2sc4981.pdf Size:150K _jmnic

2SC49N
2SC49N
JMnic Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 1.5 A IBM Base current-peak 2 A PT Total power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 5.0 ?/W JMnic Product Specification Silicon NPN Power Transistors 2SC4981 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

5.47. 2sc4982.pdf Size:147K _jmnic

2SC49N
2SC49N
JMnic Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 1.5 A IBM Base current-peak 2 A PT Total power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 5.0 ?/W JMnic Product Specification Silicon NPN Power Transistors 2SC4982 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

5.48. 2sc4941.pdf Size:58K _jmnic

2SC49N
2SC49N
Product Specification www.jmnic.com Silicon Power Transistors 2SC4941 DESCRIPTION ·With TO-3PML package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-Peak 12 A IB Base current 3 A IB Base current-Peak 6 A PT Total power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.92 ?/W JMnic Product Specification www.jmnic.com Silicon ower Transistors 2SC4941 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Col

5.49. 2sc4980.pdf Size:148K _jmnic

2SC49N
2SC49N
JMnic Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-Peak 10 A IB Base current 1.5 A IBM Base current-peak 2 A PT Total power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 5.0 ?/W JMnic Product Specification Silicon NPN Power Transistors 2SC4980 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

5.50. 2sc4940.pdf Size:148K _jmnic

2SC49N
2SC49N
JMnic Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION ·With ITO-220 package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICM Collector current-Peak 8 A IB Base current 2 A IBM Base current-peak 4 A PT Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 4.16 ?/W JMnic Product Specification Silicon NPN Power Transistors 2SC4940 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaini

5.51. 2sc4963.pdf Size:153K _jmnic

2SC49N
2SC49N
JMnic Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC4963 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 800 V VC

5.52. 2sc4908.pdf Size:24K _sanken-ele

2SC49N
2SC49N
2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) 2SC4908 Symbol Unit Symbol Conditions 2SC4908 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 V ICBO VCB=800V 100max A VCEO 800 VEB=7V 100max A V IEBO VEBO 7 IC=10mA 800min V V V(BR)CEO 0.2 o3.3 a IC 3(Pulse6) hFE VCE=4V, IC=0.7A 10to30 A b IB 1.5 VCE(sat) IC=0.7A, IB=0.14A 0.5max V A PC 35(Tc=25C) VBE(sat) IC=0.7A, IB=0.14A 1.2max V W 0.15 1.35 Tj 150 fT VCE=12V, IE=0.3A 6typ MHz C 0.15 1.35 Tstg 55 to +150 COB VCB=10V, f=1MHz 40typ pF C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 250 357 0.7 10 5 0.

5.53. 2sc4907.pdf Size:25K _sanken-ele

2SC49N
2SC49N
2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCBO 600 V VCB=600V 1max mA IEBO VCEO 500 V VEB=10V 100max A V(BR)CEO VEBO 10 V IC=25mA 500min V 0.2 o3.3 a hFE VCE=4V, IC=2A 10to30 IC 6(Pulse12) A b VCE(sat) IC=2A, IB=0.4A 0.5max V IB 2 A PC VBE(sat) IC=2A, IB=0.4A 1.3max V 30(Tc=25C) W 0.15 Tj fT VCE=12V, IE=0.5A 8typ MHz 1.35 150 C 0.15 1.35 COB VCB=10V, f=1MHz 45typ pF Tstg 55 to +150 C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E b. Lot No. 200 1

5.54. 2sc4923.pdf Size:136K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION ·With TO-3PML package ·High speed ·High reliability ·High breakdown voltage APPLICATIONS ·High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICP Collector current-peak 25 A 3 PC Collector power dissipation W TC=25? 70 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emit

5.55. 2sc4960.pdf Size:260K _inchange_semiconductor

2SC49N
2SC49N
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 40 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

5.56. 2sc4908.pdf Size:109K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation TC=25? 35 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown v

5.57. 2sc4907.pdf Size:111K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown vo

5.58. 2sc4924.pdf Size:232K _inchange_semiconductor

2SC49N
2SC49N
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 25 A Collector Power Dissipation 3.0 @ Ta=25? PC W Collector Power Dissipation 70 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Em

5.59. 2sc4981.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 7 Collector current-Peak 14 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.5 2 25 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT Ўж /W

5.60. 2sc4916.pdf Size:137K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 DESCRIPTION ·With TO-3P(H)IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 3.5 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 CHARACTERISTICS Tj=25? unless otherwise specified

5.61. 2sc4982.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 10 Collector current-Peak 20 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.5 2 25 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT Ўж /W

5.62. 2sc4928.pdf Size:73K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 DESCRIPTION ·With TO-3PL package ·High speed switching ·High breakdown voltage,high current APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A Collector surge current 20 A IC(surge) PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

5.63. 2sc4941.pdf Size:120K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4941 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Switching power transistor Ў¤ High breakdown voltage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1500 800 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Collector current-Peak 12 3 6 TC=25Ўж 65 150 -55~150 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.92 UNIT Ўж /W

5.64. 2sc4980.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 5 Collector current-Peak 10 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.5 2 25 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT Ўж /W

5.65. 2sc4940.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1200 550 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 4 Collector current-Peak 8 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 2 4 30 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT Ўж /W

5.66. 2sc4963.pdf Size:43K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Built-in damper diode APPLICATIONS Ў¤ Color TV horizontal deflection output Ў¤ Color display horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж CONDITIONS Open emitter Open base Open collector VALUE 1700 800 5 8 50 150 -55~150 Ўж Ўж UNIT V V V A W

5.67. 2sc4927.pdf Size:228K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCEO Collector-emitter voltage Open base 1500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A IC(peak) Collector current-peak 9 A IC(surge) Collector current-surge 18 A Io C to E diode forward current 8 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Em

5.68. 2sc4944.pdf Size:845K _htsemi

2SC49N
2SC49N
2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity 1 Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55 to150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100?A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 ?A DC current gain hFE VCE=6V,IC=2mA 120 400 C

Otros transistores... 2SC497R , 2SC497Y , 2SC498 , 2SC498O , 2SC498R , 2SC498Y , 2SC499 , 2SC49M , 2N222 , 2SC50 , 2SC500 , 2SC501 , 2SC502 , 2SC5020 , 2SC5020O , 2SC5020R , 2SC5020Y .

 

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