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100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SC49N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC49N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8

Tensión colector-base (Ucb): 120

Tensión colector-emisor (Uce): 70

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.3

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80

Capacitancia de salida (Cc), pF: 20

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO5

Búsqueda de reemplazo de transistor bipolar 2SC49N

2SC49N PDF doc:

5.1. 2sc4935.pdf Size:176K _toshiba

2SC49N
2SC49N

5.2. 2sc4944.pdf Size:217K _toshiba

2SC49N
2SC49N
2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1873 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA PC JEDEC ? Collector power dissipation 200 mW (Note 1) JEITA ? Junction temperature Tj 125 C TOSHIBA 2-2L1A Storage temperature range Tstg -55~125 C Weight: 6.2 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease

5.3. 2sc4915.pdf Size:319K _toshiba

2SC49N
2SC49N
2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C JEDEC ? Storage temperature range Tstg -55~125 C JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 A ? ? 0.1 A Emitter cut-off current IEBO VEB = 4 V, IC = 0 A ? ? 0.5 A hFE DC current gain VCE = 6 V, IC = 1 mA 40 ? 200 (Note) Reverse transfer capacitance Cre V

5.4. 2sc4922.pdf Size:60K _sanyo

2SC49N
2SC49N
Ordering number:EN4768 NPN Epitaxial Planar Silicon Transistor 2SC4922 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=47k? , R2=47k? ). 2106A Very small-sized package permitting 2SC4922- [2SC4922] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector

5.5. 2sc4921.pdf Size:60K _sanyo

2SC49N
2SC49N
Ordering number:EN4767 NPN Epitaxial Planar Silicon Transistor 2SC4921 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=10k? , R2=10k? ). 2106A Very small-sized package permitting 2SC4921- [2SC4921] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector

5.6. 2sc4924.pdf Size:78K _sanyo

2SC49N
2SC49N

5.7. 2sc4923.pdf Size:79K _sanyo

2SC49N
2SC49N

5.8. 2sc4976.pdf Size:31K _sanyo

2SC49N
2SC49N
Ordering number : ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO?200V(min). 2045B Large current capacitance. [2SA1875 / 2SC4976] Small reverse transfer capacitance and excellent high 6.5 2.3 5.0 -frequency characteristic : 0.5 4 Cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SA1875 / 2SC4976] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's contro

5.9. 2sc4984.pdf Size:48K _sanyo

2SC49N
2SC49N
Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions Low-frequency power amplifier applications. unit:mm Medium-speed switching. 2038A Small-sized motor drivers. [2SA1882/2SC4984] 4.5 1.5 1.6 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.4 0.5 3 2 1 0.4 1.5 3.0 0.75 1 : Base 2 : Collector Specifications 3 : Emitter SANYO : PCP ( ) : 2SA1882 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()15 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()1.5 A Collector Current (Pulse) ICP ()3 A Base Current IB ()300 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Chara

5.10. 2sc4909.pdf Size:61K _sanyo

2SC49N
2SC49N
Ordering number:EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=47k? , R2=47k? ). 2059B Very small-sized package permitting 2SC4909- [2SC4909] applied sets to be made smaller and slimmer. 0.3 0.15 Small ON resistance. 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cu

5.11. 2sc4983.pdf Size:144K _sanyo

2SC49N
2SC49N
Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers and LED drivers. 2018B [2SA1881/2SC4983] Features Large current capacity. Low collector-to-emitter saturation voltage. Very small-sized pakage permitting 2SA1881/ 2SC4983-appied set to be made smaller and slimmer. 1 : Base 2 : Emitter 3 : Collector ( ) : 2SA1881 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()15 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()1 A Collector Current (Pulse) ICP ()3 A Base Current IB ()200 mA Collector Dissipation PC 250 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta =

5.12. 2sc4919.pdf Size:99K _sanyo

2SC49N
2SC49N
Ordering number:EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SC4919- unit:mm applied sets to be made smaller and slimmer. 2106A Small output capacitance. [2SC4909] Low collector-to-emitter saturation voltage. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=15V, I

5.13. 2sc4910.pdf Size:93K _sanyo

2SC49N
2SC49N
Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 38 V Collector-to-Emitter Voltage VCEO 18 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 0.75 A Collector Current (Pulse) ICP 1.2 A Base Current IB 150 mA Collector Dissipation PC 1.5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=30V, IE=0 50 A Emitter Cutoff Current IEBO VEB=2V, IC=0 50 A DC Current Gain hFE VCE=10V, IC=200mA 20 200 Collector-to-Base Breakdown Volt

5.14. 2sc4987.pdf Size:109K _sanyo

2SC49N
2SC49N
Ordering number:EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit:mm Low collector saturation voltage. 2106A High gain-bandwidth product. [2SC4987] Small collector capacitance. 0.75 0.3 0.6 Very small-sized package permitting 2SC4987- applied sets to be made small and slim. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCES 40 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Current (Pulse) ICP 500 mA Base Current IB 40 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Con

5.15. 2sc4931.pdf Size:122K _sanyo

2SC49N
2SC49N
Ordering number:EN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2106A High cutoff frequency : fT=9.0GHz typ. [2SC4931] Very small-sized package permitting 2SC4931- 0.75 0.3 0.6 applied sets to be made small and slim. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 50 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A

5.16. 2sc4920.pdf Size:60K _sanyo

2SC49N
2SC49N
Ordering number:EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=4.7k? , R2=4.7k? ). 2106A Very small-sized package permitting 2SC4920- [2SC4920] applied sets to be made smaller and slimmer. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 10 V Input Voltage VIN 18 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current IB 20 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collect

5.17. 2sc4954.pdf Size:48K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance 2.80.2 +0.1 Cre = 0.3 pF TYP. 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4954-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4954-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Marking Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954) ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V PIN CONNECTIONS Emitter to Base Voltage VEBO 2V 1. Emitter 2. Base Collector Current IC 10 mA 3. Collector Total Power Dissipation

5.18. 2sc4959.pdf Size:53K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.4 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2SC4959T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora- tion side of the tape. Marking Embossed tape 8 mm wide. 2SC4959T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter 2. Base 3. Collector Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 150 mW J

5.19. 2sc4958.pdf Size:46K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.3 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2SC4958T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora- tion side of the tape. Marking Embossed tape 8 mm wide. 2SC4958T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4958) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PIN CONNECTIONS 1. Emitter Collector to Base Voltage VCBO 9V 2. Base 3. Collector Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 10 mA Total Power Dissipation PT 60 mW Jun

5.20. 2sc4942.pdf Size:115K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm) voltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Complementary transistor with the 2SA1871 QUALITY GRADES Standard Please refer to Quality Grades on NEC Semiconductor Electrode connection Devices (Document No. C11531E) published by NEC 1. Emitter Corporation to know the specification of quality grade on the 2. Collector devices and its recommended applications. 3. Base ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 600 V 600 Collector to emitter voltage VCEO V 7.0 Emitter to b

5.21. 2sc4957.pdf Size:43K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4957-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 5? 5? 2SC4957-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. 5? 5? * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) 1. Collector Collector to Base Voltage VCBO 9V 2. Emitter 3. Base Collector to Emitter Voltage VCEO 6V 4. Emitter Emitter to Base Voltage VEBO 2V Collector Current IC

5.22. 2sc4956.pdf Size:48K _nec

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2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.20 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4956-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 5? 5? 2SC4956-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perfora- tion side of the tape. 5? 5? * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) 1. Collector Collector to Base Voltage VCBO 9V 2. Emitter 3. Base Collector to Emitter Voltage VCEO 6V 4. Emitter Emitter to Base Voltage VEBO 2V Collector Current

5.23. 2sc4955.pdf Size:44K _nec

2SC49N
2SC49N
DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance 2.80.2 Cre = 0.4 pF TYP. +0.1 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4955-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4955-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Marking Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4955) ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) PIN CONNECTIONS Collector to Base Voltage VCBO 9V 1. Emitter Collector to Emitter Voltage VCEO 6V 2. Base Emitter to Base Voltage VEBO 2V 3. Collector Collector Current IC 30 mA Total Power Dissipation PT 180 mW

5.24. 2sc4938.pdf Size:52K _rohm

2SC49N
2SC49N
2SC4938 Transistors High-voltage Switching Transistor (400V, 5A) 2SC4938 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.6V at IC / IB=5/1A) 13.1 3.2 2) Fast switching. (tf :Max.1s at IC=4A) 3) Wide SOA. (safe operating area) 8.8 (1) Base (2) Collector (3) Emitter ROHM : PSD3 0.5Min. EIAJ : SC-83A Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 5 A Collector current ICP 7 A ? 1.5 W PC Collector power dissipation 35 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single pulse, Pw=100ms. ? Packaging specifications and hFE Type 2SC4938 Package PSD3 hFE B Code TL Basic ordering unit (pieces) 1000 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 - - V IC=50A Collector-emitter breakdown voltage BV

5.25. 2sc4997.pdf Size:51K _rohm

2SC49N
2SC49N
2SC4997 / 2SC4998 Transistors High-frequency Amplifier Transistor, RF switching (10V, 0.1A) 2SC4997 / 2SC4998 Features External dimensions (Units : mm) 1) High transition frequency. (fT=240MHz) 2) High hFE. 2SC4997 (1) (2) (3) 0.8 Absolute maximum ratings (Ta=25C) 1.6 Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V 0.1Min. Collector-emitter voltage VCEO 10 V ( ) (1) Emitter Source Emitter-base voltage VEBO 5 V ( ) ROHM : EMT3 (2) Base Gate Collector current IC 0.1 A ( ) EIAJ : SC-75A (3) Collector Drain 2SC4997 0.15 Collector power PC W dissipation 2SC4998 0.2 Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C 2SC4998 Packaging specifications and hFE 1.25 Type 2SC4997 2SC4998 2.1 Package EMT3 UMT3 hFE 560~2700 560~2700 Marking CB CB Code TL T106 0.1to0.4 ( ) (1) Emitter Source Basic ordering unit (pieces) 3000 3000 ( ) ROHM : UMT3 (2) Base Gate Each lead has same dimensions EIAJ : SC-70 (3) Collector(Drain

5.26. 2sc4937.pdf Size:45K _rohm

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2SC49N

5.27. 2sc4960.pdf Size:58K _panasonic

2SC49N
2SC49N
Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE ? 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25?C) 1.1 0.1 0.6 0.2 Parameter Symbol Ratings Unit Collector to 2SC4960 900 5.45 0.3 VCBO V 10.9 0.5 base voltage 2SC4960A 900 1 2 3 Collector to emitter voltage VCES 900 V Collector to 2SC4960 800 VCEO V 1:Base emitter voltage 2SC4960A 900 2:Collector 3:Emitter Emitter to base voltage VEBO 7 V TOP3 Full Pack Package(a) Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A Collector power TC=25 C 40 PC W dissipation Ta=25 C 3 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C

5.28. 2sc4953.pdf Size:42K _panasonic

2SC49N
2SC49N
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings (TC=25?C) 0.8 0.1 0.55 0.15 Parameter Symbol Ratings Unit 2.54 0.3 Collector to base voltage VCBO 500 V 1 2 3 5.08 0.5 VCES 500 V Collector to emitter voltage VCEO 400 V 1:Base Emitter to base voltage VEBO 7 V 2:Collector 3:Emitter Peak collector current ICP 6 A TO220D Full Pack Package Collector current IC 3 A Base current IB 1.2 A Collector power TC=25 C 30 PC W dissipation Ta=25 C 2.0 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Condition

5.29. 2sc4985.pdf Size:40K _panasonic

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2SC49N
Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5 0.2 4.5 0.2 Features 90 High collector to base voltage VCBO 0.65 0.1 0.85 0.1 High collector to emitter VCEO Allowing automatic insertion with radial taping 1.0 0.1 0.8C 0.8C 0.7 0.1 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V 0.5 0.1 0.4 0.1 Collector to emitter voltage VCEO 800 V 2.05 0.2 2.5 0.2 2.5 0.2 0.8C Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A 1:Emitter 1 2 3 Collector current IC 1 A 2:Collector 3:Base Collector power dissipation PC 1.5 W MT3 Type Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 900V, IE = 0 50 A Emitter cutoff current IEBO VEB = 7V, IC = 0 50 A Coll

5.30. 2sc4968.pdf Size:37K _panasonic

2SC49N
2SC49N
Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V 1 2 3 1:Base Collector current IC 80 mA 2:Emitter 3:Collector Collector power dissipation PC 600 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 2V, IC = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 15 V Collector to emitter voltage VCEO IC = 100 A, IB = 0 10 V Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 15

5.31. 2sc4968_e.pdf Size:41K _panasonic

2SC49N
2SC49N
Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V 1 2 3 1:Base Collector current IC 80 mA 2:Emitter 3:Collector Collector power dissipation PC 600 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 2V, IC = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 15 V Collector to emitter voltage VCEO IC = 100 A, IB = 0 10 V Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 15

5.32. 2sc4965.pdf Size:14K _hitachi

2SC49N
2SC49N
2SC4965 Silicon NPN Epitaxial ADE-208-006 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline 2SC4965 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector current IC 100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 12 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 10 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 3 V, IC = 0 DC current transfer ratio hFE 100 250 600 VCE = 5 V, IC = 5 mA Collector to emitter saturation VCE(sat) 150 300 mV IC = 80 mA, IB = 5 mA voltage Collector output

5.33. 2sc4927.pdf Size:34K _hitachi

2SC49N
2SC49N
2SC4927 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High breakdown voltage VCES = 1500 V Built-in damper diode type Isolated package TO-3PFM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC4927 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6V Collector current IC 8A Collector peak current IC(peak) 9A Collector surge current IC(surge) 18 A Collector power dissipation PC*1 50 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C C to E diode forward current ID 8A Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown V(BR)EBO 6 V IE = 500 mA, IC = 0 voltage Collector cutoff current ICES 500 A VCE = 1500 V, RBE = 0 DC current transfer ratio hFE 25 VCE = 5 V, IC = 1 A

5.34. 2sc4926.pdf Size:47K _hitachi

2SC49N
2SC49N
2SC4926 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4926 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA C

5.35. 2sc4995.pdf Size:65K _hitachi

2SC49N
2SC49N
2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4995 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltge Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 2

5.36. 2sc4964.pdf Size:35K _hitachi

2SC49N
2SC49N
2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4964 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 3V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 12 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 1 A VCB = 10 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 3 V, IC = 0 DC current transfer ratio hFE 100 250 600 VCE = 5 V, IC = 5 mA Collector to emitter saturation VCE(sat) 200 300

5.37. 2sc4901.pdf Size:46K _hitachi

2SC49N
2SC49N
2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4901 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 9 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA Collector output c

5.38. 2sc4913.pdf Size:40K _hitachi

2SC49N
2SC49N
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

5.39. 2sc4994.pdf Size:65K _hitachi

2SC49N
2SC49N
2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10.5 GHz Typ High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4994 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current ICBO 10 A VCB = 15 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 10 mA Collector output capacitance Cob 0.4 0.75 pF

5.40. 2sc4900.pdf Size:47K _hitachi

2SC49N
2SC49N
2SC4900 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 10 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 9 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA Co

5.41. 2sc4928.pdf Size:20K _hitachi

2SC49N
2SC49N
2SC4928 Silicon NPN Triple Diffused Application TO3PL Character Display Horizontal Deflection Output Features High speed switching time: 0.5 s max High breakdown voltage, high current: VCBO = 1500 V, IC = 15 A Suitable for large size CRT Display 1 1. Base 2 2. Collector 3 3. Emitter Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 6V Collector current IC 15 A Collector surge current ic(surge) 20 A Collector power dissipation PC*1 150 W Junction temperature Tj 150 C Storage temperatu

5.42. 2sc4988.pdf Size:47K _hitachi

2SC49N
2SC49N
2SC4988 Silicon NPN Epitaxial ADE-208-004 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 8.5 GHz Typ High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4988 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 100 mA Collector power dissipation PC 800*1 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15 V IC = 10 A, IE = 0 voltage Collector cutoff current ICBO 1 A VCB = 12 V, IE = 0 ICEO 1 mA VCE = 9 V, RBE =

5.43. 2sc4993.pdf Size:65K _hitachi

2SC49N
2SC49N
2SC4993 Silicon NPN Epitaxial ADE-208-011 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10.5 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC4993 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V Emitter to base voltage VEBO 1.5 V Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current ICBO 10 A VCB = 15 V, IE = 0 ICEO 1 mA VCE = 8 V, RBE = ? Emitter cutoff current IEBO 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 10 mA Collector output capacitance Cob 0.45 0.8 pF V

5.44. 2sc4989.pdf Size:134K _mitsubishi

2SC49N
2SC49N

5.45. 2sc4916.pdf Size:100K _no

2SC49N
2SC49N

5.46. 2sc4908.pdf Size:24K _sanken-ele

2SC49N
2SC49N
2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) 2SC4908 Symbol Unit Symbol Conditions 2SC4908 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 V ICBO VCB=800V 100max A VCEO 800 VEB=7V 100max A V IEBO VEBO 7 IC=10mA 800min V V V(BR)CEO 0.2 o3.3 a IC 3(Pulse6) hFE VCE=4V, IC=0.7A 10to30 A b IB 1.5 VCE(sat) IC=0.7A, IB=0.14A 0.5max V A PC 35(Tc=25C) VBE(sat) IC=0.7A, IB=0.14A 1.2max V W 0.15 1.35 Tj 150 fT VCE=12V, IE=0.3A 6typ MHz C 0.15 1.35 Tstg 55 to +150 COB VCB=10V, f=1MHz 40typ pF C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 250 357 0.7 10 5 0.

5.47. 2sc4907.pdf Size:25K _sanken-ele

2SC49N
2SC49N
2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCBO 600 V VCB=600V 1max mA IEBO VCEO 500 V VEB=10V 100max A V(BR)CEO VEBO 10 V IC=25mA 500min V 0.2 o3.3 a hFE VCE=4V, IC=2A 10to30 IC 6(Pulse12) A b VCE(sat) IC=2A, IB=0.4A 0.5max V IB 2 A PC VBE(sat) IC=2A, IB=0.4A 1.3max V 30(Tc=25C) W 0.15 Tj fT VCE=12V, IE=0.5A 8typ MHz 1.35 150 C 0.15 1.35 COB VCB=10V, f=1MHz 45typ pF Tstg 55 to +150 C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E b. Lot No. 200 1

5.48. 2sc4927.pdf Size:228K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCEO Collector-emitter voltage Open base 1500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A IC(peak) Collector current-peak 9 A IC(surge) Collector current-surge 18 A Io C to E diode forward current 8 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Em

5.49. 2sc4940.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1200 550 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 4 Collector current-Peak 8 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 2 4 30 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT Ўж /W

5.50. 2sc4960.pdf Size:260K _inchange_semiconductor

2SC49N
2SC49N
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 40 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

5.51. 2sc4908.pdf Size:109K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation TC=25? 35 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown v

5.52. 2sc4924.pdf Size:232K _inchange_semiconductor

2SC49N
2SC49N
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 25 A Collector Power Dissipation 3.0 @ Ta=25? PC W Collector Power Dissipation 70 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Em

5.53. 2sc4923.pdf Size:136K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION ·With TO-3PML package ·High speed ·High reliability ·High breakdown voltage APPLICATIONS ·High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICP Collector current-peak 25 A 3 PC Collector power dissipation W TC=25? 70 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emit

5.54. 2sc4916.pdf Size:137K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 DESCRIPTION ·With TO-3P(H)IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 3.5 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 CHARACTERISTICS Tj=25? unless otherwise specified

5.55. 2sc4982.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 10 Collector current-Peak 20 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.5 2 25 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT Ўж /W

5.56. 2sc4963.pdf Size:43K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Built-in damper diode APPLICATIONS Ў¤ Color TV horizontal deflection output Ў¤ Color display horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж CONDITIONS Open emitter Open base Open collector VALUE 1700 800 5 8 50 150 -55~150 Ўж Ўж UNIT V V V A W

5.57. 2sc4941.pdf Size:120K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4941 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Switching power transistor Ў¤ High breakdown voltage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1500 800 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Collector current-Peak 12 3 6 TC=25Ўж 65 150 -55~150 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.92 UNIT Ўж /W

5.58. 2sc4981.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 7 Collector current-Peak 14 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.5 2 25 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT Ўж /W

5.59. 2sc4928.pdf Size:73K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 DESCRIPTION ·With TO-3PL package ·High speed switching ·High breakdown voltage,high current APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A Collector surge current 20 A IC(surge) PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

5.60. 2sc4980.pdf Size:116K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 5 Collector current-Peak 10 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.5 2 25 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT Ўж /W

5.61. 2sc4907.pdf Size:111K _inchange_semiconductor

2SC49N
2SC49N
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown vo

5.62. 2sc4944.pdf Size:845K _htsemi

2SC49N
2SC49N
2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity 1 Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55 to150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100?A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 ?A DC current gain hFE VCE=6V,IC=2mA 120 400 C

Otros transistores... 2SC497-R , 2SC497-Y , 2SC498 , 2SC498-O , 2SC498-R , 2SC498-Y , 2SC499 , 2SC49M , 2N222 , 2SC50 , 2SC500 , 2SC501 , 2SC502 , 2SC5020 , 2SC5020-O , 2SC5020-R , 2SC5020-Y .

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